Search Results - "Iacovo, Serena"
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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Published in Applied physics letters (22-02-2016)“…In situ doped epitaxial Si:P films with P concentrations >1 × 1021 at./cm3 are suitable for source-drain stressors of n-FinFETs. These films combine the…”
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Journal Article -
2
Controlled Sulfurization Process for the Synthesis of Large Area MoS2 Films and MoS2/WS2 Heterostructures
Published in Advanced materials interfaces (23-02-2016)“…Large area MoS2 films with tunable physical‐chemical properties are grown on dielectric substrates by annealing of ultrathin Mo layers in the presence of a…”
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Journal Article -
3
A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage
Published in 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) (01-01-2023)“…Wafer to wafer bonding studies were carried out on blanket and patterned highly warped wafers using SiCN as bonding dielectric material to gain a deeper…”
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Conference Proceeding -
4
Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding
Published in 2021 IEEE 71st Electronic Components and Technology Conference (ECTC) (01-01-2021)“…A key factor enabling the reduction of the thermal budget in W2W bonding integration flows is the activation sequence, consisting of cleaning and plasma…”
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Conference Proceeding -
5
Area-Selective Electroless Deposition of Cu for Hybrid Bonding
Published in IEEE electron device letters (01-12-2021)“…This letter describes the use of area-selective electroless Cu deposition for topography control of Cu-SiCN hybrid bonding pads. The electroless deposition of…”
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Journal Article -
6
Introduction of a New Carrier System for Collective Die-to-Wafer Hybrid Bonding and Laser-Assisted Die Transfer
Published in 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) (01-06-2020)“…Current roadblocks within the collective die-to-wafer bonding flow, limiting die-transfer yield and throughput, are identified and discussed. Based on the…”
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Conference Proceeding -
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Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding
Published in 2020 IEEE 70th Electronic Components and Technology Conference (ECTC) (01-06-2020)“…This paper presents our approach to hybrid bond scaling to 1μm pitch and recent demonstration results. The direct wafer stacking of two Cu/SiCN surface is…”
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Conference Proceeding -
8
Simulations of Wafer-to-Wafer Bonding Dynamics and Deformation Mechanisms
Published in 2024 IEEE 10th Electronics System-Integration Technology Conference (ESTC) (11-09-2024)“…In this study, we present a parametric simulation environment based on 2-D axisymmetric finite-element modeling to study the deformation mechanisms and…”
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Conference Proceeding -
9
Controlled Sulfurization Process for the Synthesis of Large Area MoS sub(2) Films and MoS sub(2)/WS sub(2) Heterostructures
Published in Advanced materials interfaces (01-02-2016)“…Large area MoS sub(2) films with tunable physical-chemical properties are grown on dielectric substrates by annealing of ultrathin Mo layers in the presence of…”
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Journal Article -
10
Controlled Sulfurization Process for the Synthesis of Large Area MoS 2 Films and MoS 2 /WS 2 Heterostructures
Published in Advanced materials interfaces (01-02-2016)“…Large area MoS 2 films with tunable physical‐chemical properties are grown on dielectric substrates by annealing of ultrathin Mo layers in the presence of a…”
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Journal Article -
11
Exploring Bonding Mechanism of SiCN for Hybrid Bonding
Published in 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (28-05-2024)“…The demand for technologies enabling higher performance, greater capacity at lower cost has been growing. Wafer-to-Wafer hybrid bonding for three-dimensional…”
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Conference Proceeding -
12
Methodologies for Characterization of W2W Bonding Strength
Published in 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (28-05-2024)“…In this paper, we compare different methods for evaluating the interface adhesion energy of hybrid bonded wafers with silicon carbon nitride (SiCN) as the…”
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Conference Proceeding -
13
Characterization of Siliconcarbonitride bonding layer for plasma activated direct fusion bonding
Published in Proceedings of the IEEE International Interconnect Technology Conference (03-06-2024)“…In the scope of this work, a comprehensive study of plasma treated Silicon carbonitride (SiCN) dielectric bonding surfaces on Si wafers is presented. PECVD…”
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Conference Proceeding -
14
Direct Bonding Using Low Temperature SiCN Dielectrics
Published in 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC) (01-05-2022)“…For several 3D integration schemes, such as CoD2W and solder based D2W bonding, the thermal budget needs to be well below 250 °C due to the presence of…”
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Conference Proceeding -
15
The unique properties of SiCN as bonding material for hybrid bonding
Published in 2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) (05-10-2021)“…Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on…”
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Conference Proceeding -
16
ESD process assessment of 2.5D and 3D bonding technologies
Published in 2023 45th Annual EOS/ESD Symposium (EOS/ESD) (02-10-2023)“…Heterogeneous bonding technologies are an attractive way to assemble high performance computing systems today. However, ESD risks of 2.5D/3D bonding are not…”
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Conference Proceeding -
17
Investigation of Distortion in Wafer-to-wafer Bonding with Highly Bowed Wafers
Published in 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (28-05-2024)“…With the trend of contact pitch scaling down, tight wafer-to-wafer overlay control is required to ensure device electrical yield performance in hybrid bonding…”
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Conference Proceeding -
18
Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch
Published in 2024 IEEE 74th Electronic Components and Technology Conference (ECTC) (28-05-2024)“…This study presents groundbreaking outcomes of 400nm pitch wafer-to-wafer (W2W) hybrid bonding connections with a Cu/SiCN bonding interface. A new test vehicle…”
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Conference Proceeding -
19
Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01-05-2019)“…The recent developments of wafer-to-wafer bonding technology based on direct assembly of inorganic dielectric materials is offering a path for the continuous…”
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Conference Proceeding -
20
Low temperature SiCN as dielectric for hybrid bonding
Published in 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) (07-03-2023)“…For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below…”
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Conference Proceeding