Search Results - "Iacovo, Serena"

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  1. 1

    On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films by Dhayalan, Sathish Kumar, Kujala, Jiri, Slotte, Jonatan, Pourtois, Geoffrey, Simoen, Eddy, Rosseel, Erik, Hikavyy, Andriy, Shimura, Yosuke, Iacovo, Serena, Stesmans, Andre, Loo, Roger, Vandervorst, Wilfried

    Published in Applied physics letters (22-02-2016)
    “…In situ doped epitaxial Si:P films with P concentrations >1 × 1021 at./cm3 are suitable for source-drain stressors of n-FinFETs. These films combine the…”
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    Journal Article
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    Area-Selective Electroless Deposition of Cu for Hybrid Bonding by Inoue, Fumihiro, Iacovo, Serena, El-Mekki, Zaid, Kim, Soon-Wook, Struyf, Herbert, Beyne, Eric

    Published in IEEE electron device letters (01-12-2021)
    “…This letter describes the use of area-selective electroless Cu deposition for topography control of Cu-SiCN hybrid bonding pads. The electroless deposition of…”
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    Journal Article
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    Introduction of a New Carrier System for Collective Die-to-Wafer Hybrid Bonding and Laser-Assisted Die Transfer by Kennes, Koen, Phommahaxay, Alain, Guerrero, Alice, Bauder, Olga, Suhard, Samuel, Bex, Pieter, Iacovo, Serena, Liu, Xiao, Schmidt, Thomas, Beyer, Gerald, Beyne, Eric

    “…Current roadblocks within the collective die-to-wafer bonding flow, limiting die-transfer yield and throughput, are identified and discussed. Based on the…”
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    Conference Proceeding
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    Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding by Kim, Soon-Wook, Fodor, Ferenc, Heylen, Nancy, Iacovo, Serena, De Vos, Joeri, Miller, Andy, Beyer, Gerald, Beyne, Eric

    “…This paper presents our approach to hybrid bond scaling to 1μm pitch and recent demonstration results. The direct wafer stacking of two Cu/SiCN surface is…”
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    Conference Proceeding
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    Simulations of Wafer-to-Wafer Bonding Dynamics and Deformation Mechanisms by Okudur, Oguzhan Orkut, Iacovo, Serena, Kang, Shuo, Gonzalez, Mario, Beyne, Eric

    “…In this study, we present a parametric simulation environment based on 2-D axisymmetric finite-element modeling to study the deformation mechanisms and…”
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    Conference Proceeding
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    Exploring Bonding Mechanism of SiCN for Hybrid Bonding by Ebiko, Sodai, Iacovo, Serena, Chew, Soon-Aik, Zhang, Boyao, Uedono, Akira, Inoue, Fumihiro

    “…The demand for technologies enabling higher performance, greater capacity at lower cost has been growing. Wafer-to-Wafer hybrid bonding for three-dimensional…”
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    Conference Proceeding
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    Methodologies for Characterization of W2W Bonding Strength by Gonzalez, Mario, Vanstreels, Kris, Okudur, Oguzhan Orkut, Iacovo, Serena, Beyne, Eric

    “…In this paper, we compare different methods for evaluating the interface adhesion energy of hybrid bonded wafers with silicon carbon nitride (SiCN) as the…”
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    Conference Proceeding
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    Characterization of Siliconcarbonitride bonding layer for plasma activated direct fusion bonding by Doppelbauer, David, Floetgen, Christoph, Gabas, Ignacio Gabriel Vicente, Iacovo, Serena, Brems, Steven, Beyne, Eric, Duchoslav, Jiri, Groiss, Heiko

    “…In the scope of this work, a comprehensive study of plasma treated Silicon carbonitride (SiCN) dielectric bonding surfaces on Si wafers is presented. PECVD…”
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    Conference Proceeding
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    Direct Bonding Using Low Temperature SiCN Dielectrics by Iacovo, Serena, Nagano, Fuya, Channam, Venkat Sunil Kumar, Walsby, Edward, Crook, Kath, Buchanan, Keith, Jourdain, Anne, Vanstreels, Kris, Phommahaxay, Alain, Beyne, Eric

    “…For several 3D integration schemes, such as CoD2W and solder based D2W bonding, the thermal budget needs to be well below 250 °C due to the presence of…”
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    Conference Proceeding
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    The unique properties of SiCN as bonding material for hybrid bonding by Iacovo, Serena, Kim, Soon-Wook, Nagano, Fuya, Peng, Lan, Inoue, Fumihiro, Phommahaxay, Alain, Beyne, Eric

    “…Direct Cu-SiCN hybrid bonding is successfully realized by using a thermal budget of 250 °C. The excellent results should be attributed to the tight control on…”
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    Conference Proceeding
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    ESD process assessment of 2.5D and 3D bonding technologies by Simicic, Marko, Gijbels, Frank, Iacovo, Serena, Chen, Shih-Hung, Van Der Plas, Geert, Beyne, Eric

    “…Heterogeneous bonding technologies are an attractive way to assemble high performance computing systems today. However, ESD risks of 2.5D/3D bonding are not…”
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    Conference Proceeding
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    Investigation of Distortion in Wafer-to-wafer Bonding with Highly Bowed Wafers by Kang, Shuo, Iacovo, Serena, D'have, Koen, Huylenbroeck, Stefaan Van, Orkut Okudur, Oguzhan, Alexeev, Anton, Plach, Thomas, Probst, Gernot, Ding, Taotao, Wimplinger, Markus, Uhrmann, Thomas, Vos, Joeri De, Beyer, Gerald, Beyne, Eric

    “…With the trend of contact pitch scaling down, tight wafer-to-wafer overlay control is required to ensure device electrical yield performance in hybrid bonding…”
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    Conference Proceeding
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    Scaling Cu/SiCN Wafer-to-Wafer Hybrid Bonding down to 400 nm interconnect pitch by Zhang, Boyao, Chew, Soon-Aik, Stucchi, Michele, Dewilde, Sven, Iacovo, Serena, Witters, Liesbeth, Webers, Tomas, Van Sever, Koen, De Vos, Joeri, Miller, Andy, Beyer, Gerald, Beyne, Eric

    “…This study presents groundbreaking outcomes of 400nm pitch wafer-to-wafer (W2W) hybrid bonding connections with a Cu/SiCN bonding interface. A new test vehicle…”
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    Conference Proceeding
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    Enabling Ultra-Thin Die to Wafer Hybrid Bonding for Future Heterogeneous Integrated Systems by Phommahaxay, Alain, Suhard, Samuel, Bex, Pieter, Iacovo, Serena, Slabbekoorn, John, Inoue, Fumihiro, Peng, Lan, Kennes, Koen, Sleeckx, Erik, Beyer, Gerald, Beyne, Eric

    “…The recent developments of wafer-to-wafer bonding technology based on direct assembly of inorganic dielectric materials is offering a path for the continuous…”
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    Conference Proceeding
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    Low temperature SiCN as dielectric for hybrid bonding by Kumar Channam, Venkat Sunil, Iacovo, Serena, Walsby, Edward, Belov, Igor, Jourdain, Anne, Sepulveda, Alfonso, Beyne, Eric

    “…For various 3D integration schemes, such as Collective Die to wafer stacking (CoD2W) and Die to wafer (D2W) bonding, the thermal budget needs to be well below…”
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    Conference Proceeding