Search Results - "IWAYA, Motoaki"

High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector by Yoshikawa, Akira, Ushida, Saki, Nagase, Kazuhiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…An Al0.6Ga0.4N/Al0.5Ga0.5N metal–semiconductor–metal (MSM) deep-ultraviolet (DUV) photodetector was developed. It possesses both high photosensitivity and high…”
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Improvement of 650-nm red-emitting GaIn0.17N/GaIn0.38N multiple quantum wells on ScAlMgO4 (0001) substrate by suppressing impurity diffusion/penetration by Takahashi, Ryo, Fujiki, Ryoto, Hozo, Keisuke, Hiramatsu, Ryoya, Matsukura, Makoto, Kojima, Takahiro, Han, Dong-Pyo, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

“…This study aims to improve the crystalline quality of 650-nm GaIn0.17N/GaIn0.38N red-emitting multiple quantum wells (MQWs) fabricated on a ScAlMgO4 (SCAM)…”
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Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer by Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Tanaka, Shunya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…In this study, we investigated laser characteristics via photoexcitation and electro-optical characteristics via current injection in ultraviolet (UV)-B laser…”
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Over 20% wall plug efficiency of on-wafer GaN-based vertical-cavity surface-emitting laser by Watanabe, Ruka, Kobayashi, Kenta, Yanagawa, Mitsuki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Kamei, Toshihiro

“…We demonstrated an over 20% wall plug efficiency of an on-wafer GaN-based vertical-cavity surface-emitting laser (VCSEL) with a 5 μm aperture. The cavity…”
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n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers by Han, Dong-Pyo, Fujiki, Ryoto, Takahashi, Ryo, Ueshima, Yusuke, Ueda, Shintaro, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…In this study, we attempt to identify the presence of surface defects (SDs) at an n-type GaN surface after high-temperature growth and gain insight into their…”
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High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy by Yoshikawa, Akira, Nagatomi, Takaharu, Morishita, Tomohiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS)…”
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AlGaN-based UV-B laser diode with a high optical confinement factor by Tanaka, Shunya, Ogino, Yuya, Yamada, Kazuki, Omori, Tomoya, Ogura, Reo, Teramura, Shohei, Shimokawa, Moe, Ishizuka, Sayaka, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…To reduce the threshold current density (Jth) of ultraviolet (UV)-B AlGaN-based laser diodes, we investigated the critical parameters aiming to increase the…”
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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures by Lu, Weifang, Ito, Kazuma, Sone, Naoki, Okuda, Renji, Miyamoto, Yoshiya, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…[Display omitted] •Emission wavelength from 415 nm to 600 nm were achieved in GaInN/GaN MQS nanostructures.•Diffusion of precursors on SiO2 mask area plays an…”
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Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation by Kondo, Ryosuke, Yabutani, Ayumu, Omori, Tomoya, Yamada, Kazuki, Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

“…In this study, AlGaN-based ultraviolet-B band laser diodes with 150-mW peak output power in pulsed operation were demonstrated at room temperature. The…”
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Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers by Kawase, Yuta, Ikeda, Syunya, Sakuragi, Yusuke, Yasue, Shinji, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

“…In this paper, we investigated the dependence of threshold power density on the Al0.55Ga0.45N underlying layer film thickness in ultraviolet-B band (UV-B)…”
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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes by Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

“…•The Al0.6Ga0.4N growth mode on AlN-RGL at different temperatures is investigated.•The change in the Al0.6Ga0.4N growth mode depends on the density of…”
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Theoretical investigation of nitride nanowire‐based quantum‐shell lasers by Kurisaki, Yuki, Kamiyama, Satoshi, Iwaya, Motoaki, Takeuchi, Tetsuya, Akasaki, Isamu

“…We executed a feasibility study of a novel laser structure composed of GaN nanowire (NW) and GaInN/GaN multi‐quantum‐shell (MQS) active layers. We predicted…”
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Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers by Tanaka, Shunya, Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…•Effects of Mg and Si doping in the guide layers of UV-B lasers is discussed.•At the optimum Si doping concentration of 1018 cm−3.•When Si concentration was…”
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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing by Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu

“…We investigated the fabrication and characterization of AlN and AlGaN epilayers grown on sputtered and annealed AlN/sapphire templates by metal organic vapor…”
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Superlattice-Induced Variations in Morphological and Emission Properties of GaInN/GaN Multiquantum Nanowire-Based Micro-LEDs by Inaba, Soma, Lu, Weifang, Ito, Kazuma, Katsuro, Sae, Nakayama, Nanami, Shima, Ayaka, Jinno, Yukimi, Yamamura, Shiori, Sone, Naoki, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi

“…Core–shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to…”
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In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps by Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu

“…•A model for in-situ wafer curvature values of AlInN/GaN distributed Bragg reflectors was developed.•Contributions of substrate temperature ramping and GaN…”
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Morphology Control and Crystalline Quality of p‑Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires by Lu, Weifang, Nakayama, Nanami, Ito, Kazuma, Katsuro, Sae, Sone, Naoki, Miyamoto, Yoshiya, Okuno, Koji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal–organic…”
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Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers by Sato, Kosuke, Yasue, Shinji, Ogino, Yuya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu

“…This article covers an investigation of the optical properties and the origin of the mechanism of spontaneous subpeak emission from an ultraviolet‐B (UVB)…”
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Recent development of UV-B laser diodes by Iwaya, Motoaki, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Shimokawa, Moe, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

“…This review paper describes the historical development, current issues, and future expectations of UV-B laser diodes, which are expected to be adopted in…”
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Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods by Matsubara, Eri, Omori, Tomoya, Hasegawa, Ryota, Yamada, Kazuki, Yabutani, Ayumu, Kondo, Ryosuke, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

“…Herein, the differences in the characteristics of ultraviolet‐B (UV‐B) laser diodes (LDs) are investigated and fabricated on AlGaN templates prepared using two…”
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