Search Results - "IRISAWA, Toshifumi"

Efficient and Chiral Electroluminescence from In‐Plane Heterostructure of Transition Metal Dichalcogenide Monolayers by Wada, Naoki, Pu, Jiang, Takaguchi, Yuhei, Zhang, Wenjin, Liu, Zheng, Endo, Takahiko, Irisawa, Toshifumi, Matsuda, Kazunari, Miyauchi, Yuhei, Takenobu, Taishi, Miyata, Yasumitsu

“…Atomically thin transition metal dichalcogenides (TMDCs) are attractive materials for future optoelectronic applications because of their excellent electrical,…”
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Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application by Chang, Wen Hsin, Hatayama, Shogo, Saito, Yuta, Okada, Naoya, Endo, Takahiko, Miyata, Yasumitsu, Irisawa, Toshifumi

“…Novel van der Waals (vdW) contacts formed by layered Bi 2 Te 3 are found effective in improving the performance of WSe 2 pMOSFETs. As compared with…”
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Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics by Ogura, Hiroto, Kawasaki, Seiya, Liu, Zheng, Endo, Takahiko, Maruyama, Mina, Gao, Yanlin, Nakanishi, Yusuke, Lim, Hong En, Yanagi, Kazuhiro, Irisawa, Toshifumi, Ueno, Keiji, Okada, Susumu, Nagashio, Kosuke, Miyata, Yasumitsu

“…In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices…”
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Advanced germanium layer transfer for ultra thin body on insulator structure by Maeda, Tatsuro, Chang, Wen-Hsin, Irisawa, Toshifumi, Ishii, Hiroyuki, Hattori, Hiroyuki, Poborchii, Vladimir, Kurashima, Yuuichi, Takagi, Hideki, Uchida, Noriyuki

“…We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers…”
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Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition by Okada, Mitsuhiro, Pu, Jiang, Lin, Yung-Chang, Endo, Takahiko, Okada, Naoya, Chang, Wen-Hsin, Lu, Anh Khoa Augustin, Nakanishi, Takeshi, Shimizu, Tetsuo, Kubo, Toshitaka, Miyata, Yasumitsu, Suenaga, Kazu, Takenobu, Taishi, Yamada, Takatoshi, Irisawa, Toshifumi

“…The control of crystal polymorphism and exploration of metastable, two-dimensional, 1T′-phase, transition-metal dichalcogenides (TMDs) have received…”
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Continuous Color‐Tunable Light‐Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys by Pu, Jiang, Ou, Hao, Yamada, Tomoyuki, Wada, Naoki, Naito, Hibiki, Ogura, Hiroto, Endo, Takahiko, Liu, Zheng, Irisawa, Toshifumi, Yanagi, Kazuhiro, Nakanishi, Yusuke, Gao, Yanlin, Maruyama, Mina, Okada, Susumu, Shinokita, Keisuke, Matsuda, Kazunari, Miyata, Yasumitsu, Takenobu, Taishi

“…The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors,…”
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Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions by Okada, Naoya, Chang, Wen Hsin, Hatayama, Shogo, Saito, Yuta, Irisawa, Toshifumi

“…We investigated the electrical junction properties of the layered Sb _2 Te _3 film formed on Si substrates. The current−voltage characteristics of the Sb _2 Te…”
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Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology by Chang, Wen Hsin, Irisawa, Toshifumi, Ishii, Hiroyuki, Uchida, Noriyuki, Maeda, Tatsuro

“…Advanced channel formation technologies called HEtero-layer-lift-off utilizing SiGe heteroepitaxy have been realized for fabricating ultrathin body (UTB)…”
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Performance and reliability improvement in Ge(1 0 0) nMOSFETs through channel flattening process by Chang, Wen-Hsin, Irisawa, Toshifumi, Mizubayashi, Wataru, Ishii, Hiroyuki, Maeda, Tatsuro

“…The impact of channel flattening process, dozen digital etching (DDE), which is several dozen cyclic treatments of plasma oxidation and oxide wet etching, on…”
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First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs by Wen Hsin Chang, Irisawa, Toshifumi, Ishii, Hiroyuki, Hattori, Hiroyuki, Ota, Hiroyuki, Takagi, Hideki, Kurashima, Yuichi, Uchida, Noriyuki, Maeda, Tatsuro

“…High quality ultrathin body (UTB)-Ge-oninsulator (GeOI) substrates have been fabricated with advanced layer transfer technology called HEtero-LayerLift-Off…”
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CVD grown bilayer WSe2/MoSe2 heterostructures for high performance tunnel transistors by Irisawa, Toshifumi, Okada, Naoya, Chang, Wen-Hsin, Okada, Mitsuhiro, Mori, Takahiro, Endo, Takahiko, Miyata, Yasumitsu

“…Bilayer WSe2/MoSe2 van der Waals heterostructures have been directly grown on SiO2/Si substrates by 2-step chemical vapor deposition method. Bilayer nature…”
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Ultrathin MoS₂-Channel FeFET Memory With Enhanced Ferroelectricity in HfZrO₂ and Body-Potential Control by Xiang, Jiawen, Chang, Wen Hsin, Saraya, Takuya, Hiramoto, Toshiro, Irisawa, Toshifumi, Kobayashi, Masaharu

“…We have experimentally demonstrated memory operation of a HfO 2 -based ferroelectric FET (FeFET) with an ultrathin MoS 2 channel and bottom-gate structure. ZrO…”
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Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance by Chang, Wen Hsin, Hatayama, Shogo, Saito, Yuta, Okada, Naoya, Endo, Takahiko, Miyata, Yasumitsu, Irisawa, Toshifumi

“…Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility in the…”
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Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure by Chang, Wen Hsin, Wan, Hsien-Wen, Cheng, Yi-Ting, Lin, Yen-Hsun G., Irisawa, Toshifumi, Ishii, Hiroyuki, Kwo, Jueinai, Hong, Minghwei, Maeda, Tatsuro

“…Germanium-on-insulator (GeOI) structures with a surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off…”
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Growth of MoS2–Nb-doped MoS2 lateral homojunctions: A monolayer p–n diode by substitutional doping by Okada, Mitsuhiro, Nagamura, Naoka, Matsumura, Tarojiro, Ando, Yasunobu, Lu, Anh Khoa Augustin, Okada, Naoya, Chang, Wen-Hsin, Nakanishi, Takeshi, Shimizu, Tetsuo, Kubo, Toshitaka, Irisawa, Toshifumi, Yamada, Takatoshi

“…Monolayer transition metal dichalcogenides (TMDs) have been considered as promising materials for various next-generation semiconductor devices. However,…”
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Interlayer coupling effect on the performance of monolithic three-dimensional inverters and its dependence on the interlayer dielectric thickness by Hattori, Junichi, Fukuda, Koichi, Irisawa, Toshifumi, Ota, Hiroyuki, Maeda, Tatsuro

“…We study the interlayer coupling in monolithic three-dimensional (3D) inverters and investigate its effect on the performance of 3D inverters using technology…”
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Tensile strain ultra thin body SiGe on insulator through hetero-layer transfer technique by Chang, Wen Hsin, Hattori, Hiroyuki, Ishii, Hiroyuki, Irisawa, Toshifumi, Uchida, Noriyuki, Maeda, Tatsuro

“…The ultra thin body (UTB) SiGe on insulator (SGOI) substrate with body thickness of only 5nm has been fabricated by hetero-layer transfer technique with highly…”
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Physical mechanism of source and drain resistance reduction for high-performance short-channel InGaZnO thin-film transistors by Ota, Kensuke, Sakuma, Kiwamu, Irisawa, Toshifumi, Tanaka, Chika, Matsushita, Daisuke, Saitoh, Masumi

“…We systematically study the mechanism of source and drain parasitic resistance reduction in amorphous InGaZnO thin-film transistors. Hall measurement shows…”
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Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD) by Usuda, Koji, Numata, Toshinori, Irisawa, Toshifumi, Hirashita, Norio, Takagi, Shinichi

“…SOI MOSFETs are attractive device structures for high-performance CMOS because they offer the advantages of high-speed and low-power-dissipation operation. For…”
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Uniaxial Stress Engineering for High-Performance Ge NMOSFETs by Kobayashi, Masaharu, Irisawa, Toshifumi, Magyari-Kope, Blanka, Saraswat, Krishna, Wong, H.-S Philip, Nishi, Yoshio

“…Ge channel is one of the promising performance boosters for replacing Si channel in future complementary metal-oxide-semiconductor technology. The uniaxial…”
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