Search Results - "IRIARTE, G. F"

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  1. 1

    Super-High-Frequency SAW Resonators on AlN/Diamond by Rodriguez-Madrid, J. G., Iriarte, G. F., Pedros, J., Williams, O. A., Brink, D., Calle, F.

    Published in IEEE electron device letters (01-04-2012)
    “…This letter describes the procedure to manufacture high-performance surface acoustic wave (SAW) resonators on AlN/diamond heterostructures working at…”
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  2. 2

    Growth of nickel disilicide nanowires by CVD by Iriarte, G.F.

    Published in Journal of non-crystalline solids (15-05-2010)
    “…A systematic study of the influence of the process parameters on the growth of nickel disilicide (NiSi 2) nanowires by CVD (Chemical Vapor Deposition) has been…”
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  3. 3

    Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering by Iriarte, G.F., Reyes, D.F., González, D., Rodriguez, J.G., García, R., Calle, F.

    Published in Applied surface science (01-09-2011)
    “…► High-quality polycrystalline films with preferred c-axis orientation have been grown successfully on silicon and Au/Si substrates. ► AlN grew off-axis from…”
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  4. 4

    E-beam lithography of nano-interdigital transducers on insulating and semiconducting substrates by Iriarte, G. F.

    “…This work describes the micro-fabrication process developed to manufacture nano-interdigital transducers (nano-IDTs) to be used in surface acoustic wave…”
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  5. 5

    High precision pressure sensors based on SAW devices in the GHz range by Rodríguez-Madrid, J.G., Iriarte, G.F., Williams, O.A., Calle, F.

    “…► We deposit AlN on free standing diamond substrates for sensors applications. ► The deposit of AlN on diamond has been optimized for different film…”
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  6. 6

    Influence of the magnetron on the growth of aluminum nitride thin films deposited by reactive sputtering by Iriarte, G. F.

    “…Aluminum nitride (AlN) thin films deposited on high-vacuum systems without substrate heating generally exhibit a poor degree of c -axis orientation. This is…”
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  7. 7

    Structural and electroacoustic studies of AlN thin films during low temperature radio frequency sputter deposition by Engelmark, F., Iriarte, G. F., Katardjiev, I. V., Ottosson, M., Muralt, P., Berg, S.

    “…AlN is a material used in a wide variety of applications such as electroacoustic devices, blue diodes, IR windows, thermal conductors,…”
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  8. 8

    Large scale synthesis of silicon nanowires by Iriarte, G. F.

    “…Artificial nanostructures (Samuelson et al., Physica E 21:560–567, 2004 ; Xia et al., Adv Mater 15:353–389, 2003 ) show promise for the organization of…”
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  9. 9

    Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators by Rodríguez-Madrid, J.G., Iriarte, G.F., Araujo, D., Villar, M.P., Williams, O.A., Müller-Sebert, W., Calle, F.

    Published in Materials letters (2012)
    “…AlN/diamond heterostructures are very promising for high frequency surface acoustic wave (SAW) resonators. In their design, the thickness of the piezoelectric…”
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  10. 10

    Influence of deposition parameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates by Iriarte, G.F., Engelmark, F., Ottosson, M., Katardjiev, I.V.

    Published in Journal of materials research (01-02-2003)
    “…In this work, a systematic study of the influence of five deposition parameters, i.e., process pressure, substrate temperature, target power, and substrate…”
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  11. 11

    Effect of substrate–target distance and sputtering pressure in the synthesis of AlN thin films by Iriarte, G. F., Rodriguez, J. G., Calle, F.

    “…In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented…”
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  12. 12

    Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM by Lloret, F., Araújo, D., Villar, M.P., Rodríguez-Madrid, J.G., Iriarte, G.F., Williams, O.A., Calle, F.

    Published in Microelectronic engineering (01-12-2013)
    “…[Display omitted] •AlN grain has lattice orientation of their c-axis perpendicular to the interface.•After 0.5micron, the c-axis is roughly well oriented for…”
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  13. 13

    Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature by Iriarte, G. F., Engelmark, F., Katardjiev, I. V.

    Published in Journal of materials research (01-06-2002)
    “…Textured as well as epitaxial thin AlN films are of great interest for a wide range of electro-acoustic and optoelectronic applications. Reduction of the…”
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  14. 14

    Growth of nickel silicide (NiSix) nanowires by silane decomposition by Iriarte, G.F.

    Published in Current applied physics (2011)
    “…Growth of single crystal nickel-silicide (NiSix) nanowires has been achieved on inert amorphous SiO 2 and Si 3N 4 substrates covered with nanometer-size Ni…”
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  15. 15

    OPTIMAL SYNTHESIS OF C-AXIS ORIENTED ALN THIN FILMS by IRIARTE, G. F., RODRÍGUEZ, J. G., CALLE, F.

    Published in Integrated ferroelectrics (15-06-2010)
    “…C-axis oriented AlN thin films have been deposited by reactive sputtering at room temperature. The crystallographic properties of layered film structures…”
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  16. 16

    Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni by Iriarte, G.F., Bjurstrom, J., Westlinder, J., Engelmark, F., Katardjiev, I.V.

    “…Thin piezoelectric polycrystalline films such as AlN, ZnO, etc., are of great interest for the fabrication of thin film bulk/surface acoustic resonators…”
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  17. 17

    Electrical characterization of AlN MIS and MIM structures by Engelmark, F., Westlinder, J., Iriarte, G.F., Katardjiev, I.V., Olsson, J.

    Published in IEEE transactions on electron devices (01-05-2003)
    “…Aluminum nitride (AlN) thin films have been deposited on p-Si[100] and Mo-Si[100] substrates. The sputter deposited Mo was polycrystalline, predominantly…”
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  18. 18

    Synthesis of c-axis oriented AlN thin films on different substrates: A review by Iriarte, G.F., Rodríguez, J.G., Calle, F.

    Published in Materials research bulletin (01-09-2010)
    “…Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film…”
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  19. 19

    Electro-optical characterization of IC compatible microcantilevers by Pérez-Campos, A., Iriarte, G. F., Lebedev, V., Calle, F.

    “…The aim of this work is to simulate and optically characterize the piezoelectric performance of complementary metal oxide semiconductor (CMOS) compatible…”
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  20. 20

    Synthesis of ScAlN thin films on Si (100) substrates at room temperature by Pérez-Campos, A., Sinusía Lozano, M., Garcia-Garcia, F. Javier, Chen, Z., Iriarte, G. F.

    “…Scandium aluminum nitride alloy (ScAlN) thin films have been synthesized using reactive sputtering of a scandium aluminum alloy (Sc 0.40 Al 0.60 ) target on Si…”
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