Search Results - "IONESCU, Adrian"

Tunnel field-effect transistors as energy-efficient electronic switches by Ionescu, Adrian M., Riel, Heike

“…Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the…”
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Requiem for the “Imager” in TAVR: An Irrelevant Fiction by Ionescu Adrian

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Giant switchable non thermally-activated conduction in 180° domain walls in tetragonal Pb(Zr,Ti)O3 by Risch, Felix, Tikhonov, Yuri, Lukyanchuk, Igor, Ionescu, Adrian M., Stolichnov, Igor

“…Conductive domain walls in ferroelectrics offer a promising concept of nanoelectronic circuits with 2D domain-wall channels playing roles of memristors or…”
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Double-Gate Negative-Capacitance MOSFET With PZT Gate-Stack on Ultra Thin Body SOI: An Experimentally Calibrated Simulation Study of Device Performance by Saeidi, Ali, Jazaeri, Farzan, Stolichnov, Igor, Ionescu, Adrian M.

“…In this paper, we propose and investigate the high-performance and low-power design space of nonhysteretic negative capacitance (NC) MOSFETs for the 14-nm node…”
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Double-Gate Tunnel FET With High- \kappa Gate Dielectric by Boucart, K., Ionescu, A.M.

“…In this paper, we propose and validate a novel design for a double-gate tunnel field-effect transistor (DG tunnel FET), for which the simulations show…”
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Negative capacitance gives a positive boost by Ionescu, Adrian M.

“…Negative capacitance effect in a ferroelectric-based gate stack provides an effective solution for hysteresis-free steep-slope  operation in a MoS 2…”
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Electronic devices Nanowire transistors made easy by Ionescu, Adrian M

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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects by Saeidi, Ali, Rosca, Teodor, Memisevic, Elvedin, Stolichnov, Igor, Cavalieri, Matteo, Wernersson, Lars-Erik, Ionescu, Adrian M

“…Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of…”
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Strange times indeed: the evolving significance of myocardial ischaemia and the dwindling importance of functional imaging by Ionescu, Adrian

“…The ISCHEMIA trial is only the latest and most compelling link in a chain of evidence that suggests that myocardial ischaemia per se is not an appropriate…”
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Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers by Garcia-Cordero, Erick, Bellando, Francesco, Zhang, Junrui, Wildhaber, Fabien, Longo, Johan, Guérin, Hoël, Ionescu, Adrian M

“…Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies…”
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Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor by Sheibani, Shokoofeh, Ionescu, Adrian M., Norouzi, Parviz

“…Fluoxetine (FL) is one of the selective serotonin reuptake inhibitors, which is used as an anti-depressant, as well as anti-panic drug. In this work, a sensor…”
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Graphene-enhanced ferroelectric domain wall high-output memristor by Risch, Felix, Gilani, Ali, Kamaei, Sadegh, Ionescu, Adrian M., Stolichnov, Igor

“…Recent studies on memristive materials and technologies have expanded beyond conventional memory elements, driven by their potential application in novel…”
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Near optimal graphene terahertz non-reciprocal isolator by Tamagnone, Michele, Moldovan, Clara, Poumirol, Jean-Marie, Kuzmenko, Alexey B., Ionescu, Adrian M., Mosig, Juan R., Perruisseau-Carrier, Julien

“…Isolators, or optical diodes, are devices enabling unidirectional light propagation by using non-reciprocal optical materials, namely materials able to break…”
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Nanoelectronics: Ferroelectric devices show potential by Ionescu, Adrian M

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Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory by Sharma, Pankaj, Bernard, Laurent Syavoch, Bazigos, Antonios, Magrez, Arnaud, Ionescu, Adrian M

“…In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at…”
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Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer by Gastaldi, Carlotta, Cavalieri, Matteo, Saeidi, Ali, O'Connor, Eamon, Bellando, Francesco, Stolichnov, Igor, Ionescu, Adrian M.

“…In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO 2 ) and a…”
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Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches by Muller, Andrei A., Cavalieri, Matteo, Ionescu, Adrian M.

“…In this Letter, we report and investigate the temperature dependency of various radio frequency (RF) parameters for a fabricated reconfigurable bandstop filter…”
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Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric by Boucart, Kathy, Ionescu, Adrian Mihai

“…In this paper, the length scaling of the silicon Double Gate Tunnel Field Effect Transistor (DG Tunnel FET) is studied. It is found that scaling limits are…”
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Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors by Saeidi, Ali, Jazaeri, Farzan, Stolichnov, Igor, Enz, Christian C., Ionescu, Adrian M.

“…Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate…”
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Understanding the Superlinear Onset of Tunnel-FET Output Characteristic by De Michielis, L., Lattanzio, L., Ionescu, A. M.

“…In this letter, we report that the source and channel Fermi-Dirac distributions in interband-tunneling-controlled transistors play a fundamental role on the…”
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