Search Results - "IEEE transactions on electron devices"

GaN-on-Si Power Technology: Devices and Applications by Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu

“…In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power…”
Get full text

The Past, the Present, and the Future of Ferroelectric Memories by Mikolajick, T., Schroeder, U., Slesazeck, S.

“…Ferroelectric materials are characterized by two stable polarization states that can be switched from one to another by applying an electrical field. As one of…”
Get full text

Phase-Change Memory-Towards a Storage-Class Memory by Fong, Scott W., Neumann, Christopher M., Wong, H.-S Philip

“…Phase-change memory (PCM) has undergone significant academic and industrial research in the last 15 years. After much development, it is now poised to enter…”
Get full text

Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory Performance by Ni, Kai, Sharma, Pankaj, Zhang, Jianchi, Jerry, Matthew, Smith, Jeffery A., Tapily, Kandabara, Clark, Robert, Mahapatra, Souvik, Datta, Suman

“…We fabricate, characterize, and establish the critical design criteria of Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric field effect transistor (FeFET) for…”
Get full text

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element by Burr, Geoffrey W., Shelby, Robert M., Sidler, Severin, di Nolfo, Carmelo, Junwoo Jang, Boybat, Irem, Shenoy, Rohit S., Narayanan, Pritish, Virwani, Kumar, Giacometti, Emanuele U., Kurdi, Bulent N., Hyunsang Hwang

“…Using two phase-change memory devices per synapse, a three-layer perceptron network with 164 885 synapses is trained on a subset (5000 examples) of the MNIST…”
Get full text

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty by Ali, T., Polakowski, P., Riedel, S., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Seidel, K., Lohr, D., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Calvo, J., Zimmermann, K., Muller, J.

“…We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with…”
Get full text

3-D NAND Technology Achievements and Future Scaling Perspectives by Goda, Akira

“…Since the introduction of a 3-D NAND product in 2014, the areal density has increased by more than 8 times (from 0.96 to 7.80 Gb/mm 2 ) in the recent five…”
Get full text

ReRAM: History, Status, and Future by Chen, Yangyin

“…This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development…”
Get full text

Superjunction Power Devices, History, Development, and Future Prospects by Udrea, Florin, Deboy, Gerald, Fujihira, Tatsuhiko

“…Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar…”
Get full text

Current Status and Opportunities of Organic Thin-Film Transistor Technologies by Xiaojun Guo, Yong Xu, Ogier, Simon, Tse Nga Ng, Caironi, Mario, Perinot, Andrea, Ling Li, Jiaqing Zhao, Wei Tang, Sporea, Radu A., Nejim, Ahmed, Carrabina, Jordi, Cain, Paul, Feng Yan

“…Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput…”
Get full text

The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia by Lee, Yongsun, Goh, Youngin, Hwang, Junghyeon, Das, Dipjyoti, Jeon, Sanghun

“…In recent years, several experimental approaches have been adopted to study and understand the mechanism and improve the ferroelectricity of fluorite-type…”
Get full text

Magnetoresistive Random Access Memory: Present and Future by Ikegawa, Sumio, Mancoff, Frederick B., Janesky, Jason, Aggarwal, Sanjeev

“…Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent memory technology because of its long data retention and robust endurance…”
Get full text

High-Throughput In-Memory Computing for Binary Deep Neural Networks With Monolithically Integrated RRAM and 90-nm CMOS by Yin, Shihui, Sun, Xiaoyu, Yu, Shimeng, Seo, Jae-Sun

“…Deep neural network (DNN) hardware designs have been bottlenecked by conventional memories, such as SRAM due to density, leakage, and parallel computing…”
Get full text

Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs by Sayadi, Luca, Iannaccone, Giuseppe, Sicre, Sebastien, Haberlen, Oliver, Curatola, Gilberto

“…We investigate the impact of the gate contact on the threshold voltage stability in p-GaN gate AlGaN/GaN heterojunction field-effect transistors with double…”
Get full text

Vertical β-Ga₂O₃ Power Transistors: A Review by Wong, Man Hoi, Higashiwaki, Masataka

“…With projected performance advantages over silicon and incumbent wide-bandgap compound semiconductors, gallium oxide (Ga 2 O 3 ) has garnered worldwide…”
Get full text

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories by Yurchuk, Ekaterina, Muller, Johannes, Muller, Stefan, Paul, Jan, Pesic, Milan, van Bentum, Ralf, Schroeder, Uwe, Mikolajick, Thomas

“…Ferroelectric field effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO 2 ) thin films show high potential for future embedded nonvolatile…”
Get full text

Device and Circuit-Level Assessment of GaSb/Si Heterojunction Vertical Tunnel-FET for Low-Power Applications by Tripathy, Manas Ranjan, Singh, Ashish Kumar, Samad, A., Chander, Sweta, Baral, Kamalaksha, Singh, Prince Kumar, Jit, Satyabrata

“…This article investigates the performance of a vertically grown GaSb/Si tunnel field effect transistor (V-TFET) with a source pocket to enhance the performance…”
Get full text

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability by Puschkarsky, K., Grasser, T., Aichinger, T., Gustin, W., Reisinger, H.

“…An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to…”
Get full text

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices by Bader, Samuel James, Lee, Hyunjea, Chaudhuri, Reet, Huang, Shimin, Hickman, Austin, Molnar, Alyosha, Xing, Huili Grace, Jena, Debdeep, Then, Han Wui, Chowdhury, Nadim, Palacios, Tomas

“…Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large…”
Get full text

Cryogenic MOS Transistor Model by Beckers, Arnout, Jazaeri, Farzan, Enz, Christian

“…This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2…”
Get full text