Search Results - "IEEE electron device letters"

Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage by Sharma, Shivam, Zeng, Ke, Saha, Sudipto, Singisetti, Uttam

“…This letter reports the polymer passivation of field plated lateral β-Ga 2 O 3 MOSFETs with significant improvement in the breakdown voltages as compared to…”
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs by Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…A Sn-doped (100) β-Ga 2 O 3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga 2 O 3…”
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An Artificial Neuron Based on a Threshold Switching Memristor by Zhang, Xumeng, Wang, Wei, Liu, Qi, Zhao, Xiaolong, Wei, Jinsong, Cao, Rongrong, Yao, Zhihong, Zhu, Xiaoli, Zhang, Feng, Lv, Hangbing, Long, Shibing, Liu, Ming

“…Artificial neurons and synapses are critical units for processing intricate information in neuromorphic systems. Memristors are frequently engineered as…”
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Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV by Hu, Zongyang, Nomoto, Kazuki, Li, Wenshen, Tanen, Nicholas, Sasaki, Kohei, Kuramata, Akito, Nakamura, Tohru, Jena, Debdeep, Xing, Huili Grace

“…High-voltage vertical Ga 2 O 3 MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on bulk Ga 2 O 3 (001) substrates. The low charge…”
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60-GHz Compact Dual-Mode On-Chip Bandpass Filter Using GaAs Technology by Xu, Kai-Da, Guo, Ying-Jiang, Liu, Yiqun, Deng, Xianjin, Chen, Qiang, Ma, Zhewang

“…A 60-GHz compact dual-mode on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the…”
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Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems by Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, Hyunsang Hwang

“…We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement the synapse function in neuromorphic systems. Our findings…”
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Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V by Man Hoi Wong, Sasaki, Kohei, Kuramata, Akito, Yamakoshi, Shigenobu, Higashiwaki, Masataka

“…Depletion-mode field-plated Ga 2 O 3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in…”
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Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors by Beckers, Arnout, Jazaeri, Farzan, Enz, Christian

“…This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures…”
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High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2 by Roy, Saurav, Bhattacharyya, Arkka, Ranga, Praneeth, Splawn, Heather, Leach, Jacob, Krishnamoorthy, Sriram

“…We report a vertical (001) <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 field-plated (FP) Schottky barrier diode…”
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beta -Ga2O3 MOSFETs for Radio Frequency Operation by Green, Andrew Joseph, Chabak, Kelson D., Baldini, Michele, Moser, Neil, Gilbert, Ryan, Fitch, Robert C., Wagner, Gunter, Galazka, Zbigniew, Mccandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…We demonstrate a β-Ga 2 O 3 MOSFET with record-high transconductance (gm) of 21 mS/mm and extrinsic cutoff frequency (fT) and maximum oscillating frequency…”
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High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm by Hong Zhou, Mengwei Si, Alghamdi, Sami, Gang Qiu, Lingming Yang, Ye, Peide D.

“…In this letter, we report on high-performance depletion/enhancement-mode β-Ga 2 O 3 on insulator (GOOI) field-effect transistors (FETs) with record high drain…”
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Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation by Lin, Chia-Hung, Yuda, Yohei, Wong, Man Hoi, Sato, Mayuko, Takekawa, Nao, Konishi, Keita, Watahiki, Tatsuro, Yamamuka, Mikio, Murakami, Hisashi, Kumagai, Yoshinao, Higashiwaki, Masataka

“…A guard ring (GR) was employed to improve the breakdown voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {br}} </tex-math></inline-formula>) of…”
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1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs by Zeng, Ke, Vaidya, Abhishek, Singisetti, Uttam

“…A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and plasma enhanced chemical vapor deposited SiO 2 layers, is used to…”
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beta -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz by Xia, Zhanbo, Xue, Hao, Joishi, Chandan, Mcglone, Joe, Kalarickal, Nidhin Kurian, Sohel, Shahadat H., Brenner, Mark, Arehart, Aaron, Ringel, Steven, Lodha, Saurabh, Lu, Wu, Rajan, Siddharth

“…As an ultra-wide bandgap semiconductor, <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 has attracted great attention…”
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High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates by Min Sun, Yuhao Zhang, Xiang Gao, Palacios, Tomas

“…This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical…”
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A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation by Gong, Nanbo, Ma, Tso-Ping

“…Recent demonstration of aggressively scaled HfO 2 -based ferroelectric field effect transistors (FE-HfO 2 -FETs) has illustrated a pathway to fabricate FeFETs…”
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HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications by Seungyeol Oh, Taeho Kim, Myunghoon Kwak, Jeonghwan Song, Jiyong Woo, Sanghun Jeon, In Kyeong Yoo, Hyunsang Hwang

“…We propose a HfZrO x (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance…”
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Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer by Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian

“…Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog…”
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All-Silicon Microdisplay Using Efficient Hot-Carrier Electroluminescence in Standard 0.18μm CMOS Technology by Wu, Kejun, Zhang, Hongqiao, Chen, Yanxu, Luo, Qian, Xu, Kaikai

“…All-CMOS monolithic microdisplay technologies have been attracting attention due to their direct integration of light-emitting pixel arrays and driving…”
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Millimeter-Wave On-Chip Bandpass Filter Based on Spoof Surface Plasmon Polaritons by Guo, Ying-Jiang, Xu, Kai-Da, Deng, Xianjin, Cheng, Xu, Chen, Qiang

“…A gallium arsenide (GaAs)-based millimeter-wave broadband bandpass filter (BPF) is proposed based on slotted half-mode substrate integrated waveguide (HMSIW)…”
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