Deep levels, transport and THz emission properties of SiGe/Si quantum-well structures

Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture...

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Bibliographic Details
Published in:	中国科学：技术科学英文版 no. 1; pp. 6 - 9
Main Author:	I. V. ANTONOVA M. S. KAGAN E. P. NEUSTROEV S. A. SMAGULOVA
Format:	Journal Article
Language:	English
Published:	2009
Subjects:	confinement DLTS levels quantum SiGe spectra wells
Online Access:	Get full text
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Summary:	Recharging of quantum confinement levels in SiGe quantum wells (QW) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer. A peak with activation energy varying in the range from 0 to 100 meV in different tempera-ture intervals was observed in Q-DLTS spectra. Activation energies extracted from Q-DLTS measure-mens are in good agreement with energies of quantum confinement levels in the QW.
Bibliography:	I. V. ANTONOVA1, M. S. KAGAN2, E. P. NEUSTROEV3 & S. A. SMAGULOVA3 1 Institute of Semiconductor Physics, Russian Academy of Sciences, 360090 Novosibirsk, Russia; 2 Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow K-9, Russia; 3 Yakutsk State University, 677000 Yakutsk, Saha Republik, Russia 11-5845/TH
ISSN:	1674-7321 1869-1900