Search Results - "I. Matulionienė"

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels by Matulionis, A., Liberis, J., Matulionienė, I., Ramonas, M., Šermukšnis, E., Leach, J. H., Wu, M., Ni, X., Li, X., Morkoç, H.

“…Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly…”
Get full text

Novel fluctuation-based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors by Matulionis, A., Liberis, J., Matulionienė, I., Šermukšnis, E., Leach, J. H., Wu, M., Morkoç, H.

“…The fluctuation‐based technique has been used to shed light onto the physical processes responsible for the performance of nitride heterostructure field effect…”
Get full text

InAlN-barrier HFETs with GaN and InGaN channels by Liberis, J., Matulionienė, I., Matulionis, A., Šermukšnis, E., Xie, J., Leach, J. H., Morkoç, H.

“…Advantages and drawbacks of InN‐containing GaN‐based heterostructure field‐effect transistors (HFETs) are reviewed. The main attention is paid to fundamental…”
Get full text

Transport and fluctuations in nonlinear-dissipative systems: role of interparticle collisions by R. Katilius, A. Matulionis, R. Raguotis, I. Matulionienė

“…The goal of the paper is to overview contemporary theoretical and experimental research of the microwave electric noise and fluctuations of hot carriers in…”
Get full text

Hot-Electron Transport, Noise and Power Dissipation in GaN Channels at High Density of Electrons by Matulionis, A., Liberis, J., Matulionienė, I., Ramonas, M.

Get full text

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay by Matulionis, A., Liberis, J., Matulionienė, I., Šermukšnis, E., Leach, J.H., Wu, M., Ni, X., Morkoç, H.

Get full text

Fast and Ultrafast Processes in AlGaN/GaN Channels by Matulionis, A., Liberis, J., Ardaravičius, L., Ramonas, M., Zubkutė, T., Matulionienė, I., Eastman, L.F., Shealy, J.R., Smart, J., Pavlidis, D., Hubbard, S.

“…Extrapolated experimental dependence of electron energy relaxation time is used to treat hot‐electron sharing by the adjacent Al0.15Ga0.85N and GaN layers in…”
Get full text

Hot-electron energy relaxation, noise, and lattice strain in InGaAs quantum well channels by Matulionis, A., Aninkevičius, V., Liberis, J., Matulionienė, I., Berntgen, J., Heime, K., Hartnagel, H. L.

“…Energy loss by hot electrons in lattice-matched and strained InGaAs layers is estimated from experimental data on microwave noise obtained for InP-based…”
Get full text

Experiments on hot electron noise in semiconductor materials for high-speed devices by Bareikis, V., Liberis, J., Matulioniene, I., Matulionis, A., Sakalas, P.

“…Experimental results on noise temperature and spectral density of current fluctuations (electron diffusion) at high electric fields in silicon, gallium…”
Get full text

QW-Shape-Dependent Hot-Electron Velocity Fluctuations in InGaAs-Based Heterostructures by Matulionis, A., Aninkevičius, V., Berntgen, J., Gasquet, D., Liberis, J., Matulionienė, I.

“…Hot‐electron microwave noise was measured for InAlAs/InGaAs/InAlAs/InP quantum well channels containing two‐dimensional electron gas subjected to high electric…”
Get full text

Transverse tunnelling time constant estimated from hot-electron noise in GaAs-based heterostructure by Aninkevičius, V, Bareikis, V, Katilius, R, Liberis, J, Matulionien≐, I, Matulionis, A, Kop'ev, P.S, Ustinov, V.M

“…Electric noise characteristics of a triple-heterojunction AlGaAs/GaAs/AlAs/GaAs structure are measured at 10 GHz frequency for the electric field (≤ 1.3 kV/cm)…”
Get full text

Gamma -X intervalley-scattering time constant for GaAs estimated from hot-electron noise spectroscopy data by Aninkevicius, V, V, Bareikis, V, V, Katilius, R, Liberis, J, Matulioniene, I, I, Matulionis, A, Sakalas, P, Saltis, R

Get full text

Plasmon-assisted power dissipation in GaN-based 2DEG channels for power HFETs by Matulionis, A., Liberis, J., Matulioniene, I., Ramonas, M., Sermuksnis, E.

“…A nitride heterostructure field-effect transistor (HFET) is among the most promising hf power devices. A two-dimensional electron gas (2DEG) channel for the…”
Get full text