Search Results - "I-HSING TAN"

Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination by Chi-Kuang Sun, I-Hsing Tan, Bowers, J.E.

“…We studied ultrafast transport dynamics of highspeed p-i-n photodetectors under high illumination using an electrooptic sampling technique. Under high…”
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Photoluminescence study of strain-induced quantum well dots by wet-etching technique by HSING TAN, I, MIRIN, R, JAYARAMAN, V, SHI, S, HU, E, BOWERS, J

“…Simple holographic lithography and wet etching have been used to fabricate strain-induced quantum well dot structures. Lateral confinement was generated in a…”
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120-GHz long-wavelength low-capacitance photodetector with an air-bridged coplanar metal waveguide by I-Hsing Tan, Chi-Kuang Sun, Giboney, K.S., Bowers, J.E., Hu, E.L., Miller, B.I., Capik, R.J.

“…We demonstrate a long-wavelength detector structure using an undercut mesa and an air-bridged coplanar metal waveguide to significantly reduce both the diode…”
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Modeling and performance of wafer-fused resonant-cavity enhanced photodetectors by I-Hsing Tan, Hu, E.L., Bowers, J.E., Miller, B.I.

“…We discuss wavelength tuning and its corresponding quantum efficiency modulated by the standing wave effects in a resonant-cavity enhanced (RCE) photodetector…”
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Luminescence efficiency of near-surface quantum wells before and after ion-gun hydrogenation by YING-LAN CHANG, I-HSING TAN, YONG-HANG ZHANG, MERZ, J, HU, E, FROVA, A, EMILIANI, V

“…We have studied the effects of the proximity of a bare Al0.3Ga0.7As surface on the luminescence of an underlying GaAs quantum well (QW) before and after…”
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InGaAs quantum well wires grown on patterned GaAs substrates by Mirin, Richard P., Tan, I‐Hsing, Weman, Helge, Leonard, Marilyn, Yasuda, Takashi, Bowers, John E., Hu, Evelyn L.

“…Strained InGaAs/GaAs quantum well wires have been grown on 2300 Å period gratings etched into GaAs substrates. Both conventional molecular beam epitaxy and…”
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Systematic observation of strain-induced lateral quantum confinement in GaAs quantum well wires prepared by chemical dry etching by I-HSING TAN, LISHAN, D, MIRIN, R, VIJAY JAYARAMAN, YASUDA, T, HU, E. L, BOWERS, J

“…HCl radical beam etching has been used to produce strain-induced lateral confinement in a GaAs quantum well. This confinement was generated in the GaAs quantum…”
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Observation of increased photoluminescence decay time in strain-induced quantum-well dots by I-HSING TAN, YING-LAN CHANG, MIRIN, R, HU, E, MERZ, J, YASUDA, T, SEGAWA, Y

“…We report on the observation of increased photoluminescence (PL) decay time in strain-induced quantum-well dots (SIQWDs), 120 nm in diameter. Lateral…”
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Optical study of strained quantum well wires by Tan, I‐Hsing, Yasuda, Takashi, Mirin, Richard, Lishan, David, Hu, Evelyn, Bowers, John, Merz, James, He, Ming Yuan, Evans, Anthony

“…We have investigated strain‐induced lateral quantum confinement in a GaAs quantum well, as well as strain propagation along the material growth direction. The…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors by I-HSING TAN, DUDLEY, J. J, BABIC, D. I, COHEN, D. A, YOUNG, B. D, HU, E. L, BOWERS, J. E, MILLER, B. I, KOREN, U, YOUNG, M. G

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Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogenation by Chang, Ying-Lan, Tan, I-Hsing, Reaves, Casper, Merz, James, Hu, Evelyn, DenBaars, Steve, Frova, A., Emiliani, V., Bonanni, B.

“…We have investigated the optical properties of an InGaAs/InP surface quantum well before and after room-temperature low-energy ion-gun hydrogenation. The…”
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Evaluation of the etch depth dependence of three‐dimensional confinement in strain‐induced quantum well dot structures by Tan, I‐Hsing, Chang, Ying‐Lan, Shi, Song, Mirin, Richard, Hu, Evelyn, Bowers, John, Merz, James

“…Strain‐induced quantum well dots (SIQWDs) 120 nm in diameter have been fabricated by laser holography and wet etching. Lateral confinement was generated in the…”
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Study of partial strain release and surface states formed on the sidewall of InGaAs quantum‐well wires by Tan, I‐Hsing, Mirin, Richard, Yasuda, Takashi, Hu, Evelyn L., Bowers, John, Prater, Craig B., Hansma, Paul K., He, Ming Yuan, Evans, Anthony G.

“…Strained InGaAs/GaAs quantum‐well wires (QWWs) with a lateral wire width of 105 nm and a pitch of 230 nm have been fabricated by holographic lithography and…”
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Study of temperature dependent hydrogenation on near‐surface strained quantum wells by Chang, Ying‐Lan, Krishnamurthy, Mohan, Tan, I‐Hsing, Hu, Evelyn L., Merz, James L., Petroff, Pierre M., Frova, A., Emiliani, V.

“…The incorporation of hydrogen by ion‐gun irradiation into near‐surface and deeply embedded In0.13Ga0.87As/GaAs strained quantum wells (QWs) has been studied by…”
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Luminescence enhancement of InGaAs/InP surface quantum wells by room‐temperature ion‐gun hydrogenation by Chang, Ying‐Lan, Tan, I‐Hsing, Reaves, Casper, Hu, Evelyn, Merz, James, DenBaars, Steve

“…An InGaAs/InP surface quantum well has been used as a very effective probe of surface states before and after room‐temperature low‐energy ion‐gun…”
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Theoretical and experimental study of lower-dimensional (one-dimensional and zero-dimensional) strained quantum system by Tan, I-Hsing

“…With the success of the optoelectronic devices based on the two-dimensional (2D) quantum well, it is a natural trend to continue to reduce system's…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In(0.53)Ga(0.47)As photodetectors by Tan, I-Hsing, Dudley, J J, Babic, D I, Cohen, D A, Young, B D, Hu, E L, Bowers, J E, Miller, B I, Koren, U, Young, M G

“…We demonstrate greater than 90% quantum efficiency in an In(0.53)Ga(0.47)As photodetector with a thin (900 A) absorbing layer. This was achieved by inserting…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors by I-Hsing Tan, Dudley, J.J., Babic, D.I., Cohen, D.A., Young, B.D., Hu, E.L., Bowers, J.E., Miller, B.I., Koren, U., Young, M.G.

“…We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was…”
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Ultrafast transport nonlinearity in ultrawide-band long-wavelength p-i-n photodetectors under high illumination by Chi-Kuang Sun, I-Hsing Tan, Bowers, J.E., Lundstrom, M., Gray, J.

“…Summary form only given. We present the study of an ultrawide-band long-wavelength p-i-n vertical illuminated photodetector under high illumination using an…”
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Partial strain release and surface states formed on the sidewall of InGaAs quantum well wires by Tan, I-Hsing, Mirin, R, Yasuda, T, Hu, E L, Bowers, J, Prater, Craig B

“…Article abstract not included…”
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