Search Results - "Hyung-Suk Jung"
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Toward Advanced High‐ k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition
Published in Advanced materials technologies (01-10-2023)“…Dynamic random access memories (DRAMs) are currently used as the core memory in computing systems because of their high speed and density. Their demand should…”
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2
Evaluation of the Ultimate Strength of the Ultra-High-Performance Fiber-Reinforced Concrete Beams
Published in Applied sciences (01-04-2021)“…Evaluation of the ultimate strength for the UHPFRC (ultra-high-performance fiber-reinforced concrete) flexural members was conducted. In this study, an…”
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3
Flexural Strength and Stiffness of Donut-Type Voided Slab
Published in Applied sciences (01-06-2022)“…The voided slab system has been known as an effective technique to replace a heavy reinforced concrete slab system without the decrease in flexural strength…”
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4
Bond Characteristics of a Deformed Steel Bar Embedded in Donut-Type Voided Slab
Published in Applied sciences (01-06-2022)“…In reinforced concrete (RC) structures, bond behavior between concrete and deformed steel bar (rebar) has a great effect on the structural behavior of members…”
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5
Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures
Published in Applied physics letters (12-10-2015)“…Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors…”
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Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor
Published in Advanced materials technologies (01-10-2023)“…The interface between a dielectric thin film and a metal electrode is studied to improve reliability as well as electrical properties of the…”
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7
Two-Way Flexural Behavior of Donut-Type Voided Slabs
Published in International journal of concrete structures and materials (01-12-2018)“…Voided slab systems were developed using segmented void formers such as spherical or oval plastic balls for two-way slab applications. This type of slab is…”
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8
Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties
Published in Journal of Asian Ceramic Societies (03-07-2022)“…The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the…”
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9
Experimental and Numerical Study on the Compression Behavior of Square Concrete-Filled Steel Tube Stub Columns with Steel Fiber-Reinforced High-Strength Concrete
Published in International journal of polymer science (01-01-2018)“…This study was conducted to evaluate the applicability of concrete-filled steel tube (CFT) columns made from high-performance construction materials. KBC2016,…”
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10
Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-01-2012)“…Silicon oxide thin film grown at low temperatures (<300–500 °C) is essential for a range of applications in semiconductor devices. In this study, silicon oxide…”
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11
Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- k pMOSFETs
Published in IEEE electron device letters (01-03-2009)“…Negative bias temperature instability (NBTI) in MOSFETs with high-dielectric-constant ( k ) gate dielectrics has been investigated using a novel pulse NBTI…”
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12
Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET
Published in Microelectronic engineering (01-09-2007)“…The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO2 nMOSFET…”
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13
Experimental study on the cyclic behavior of steel fiber reinforced high strength concrete columns and evaluation of shear strength
Published in Engineering structures (15-02-2018)“…•Performance increase of high strength reinforced concrete columns by inclusion of steel fiber.•Crack control and decrease of crack angle according to the…”
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14
Evaluation of punching shear strength of voided slabs considering the effect of the ratio b0/d
Published in Engineering structures (01-06-2018)“…•Test results of punching shear strength of voided slabs.•Numerical investigation of the punching shear strength of voided slab.•Punching shear strength…”
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15
Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition
Published in Chemistry of materials (25-09-2012)“…The structural and electronic properties of HfO2 thin films grown by atomic layer deposition (ALD) under various ozone concentrations were investigated using…”
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16
Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-04-2012)“…The unoccupied electronic structures of 5 nm thick high permittivity (k) oxides (HfO2, ZrO2, and Al2O3) and SiO2 films on Ge substrates were examined using O…”
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17
Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET
Published in IEEE electron device letters (01-04-2008)“…Bias temperature instability (BTI) characteristics depending on postdeposition anneal (PDA) conditions were studied using dc (slow process) and pulse (fast…”
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18
Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping
Published in Chemistry of materials (27-07-2010)“…The gate leakage current density (J g) of ultrathin (∼3 nm) Al-doped HfO2 (Al:HfO2) films with an Al concentration of ∼11% was lower than that of the control…”
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19
Monocliniclike local atomic structure in amorphous ZrO2 thin film
Published in Applied physics letters (04-10-2010)“…The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K-edge x-ray absorption…”
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20
Improving the Electrical Properties of Lanthanum Silicate Films on Ge Metal Oxide Semiconductor Capacitors by Adopting Interfacial Barrier and Capping Layers
Published in ACS applied materials & interfaces (28-05-2014)“…The electrical properties of La-silicate films grown by atomic layer deposition (ALD) on Ge substrates with different film configurations, such as various Si…”
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