Search Results - "Hyung-Suk Jung"

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  1. 1

    Toward Advanced High‐ k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition by Kim, Se Eun, Sung, Ju Young, Jeon, Jae Deock, Jang, Seo Young, Lee, Hye Min, Moon, Sang Mo, Kang, Jun Goo, Lim, Han Jin, Jung, HyungSuk, Lee, Sang Woon

    Published in Advanced materials technologies (01-10-2023)
    “…Dynamic random access memories (DRAMs) are currently used as the core memory in computing systems because of their high speed and density. Their demand should…”
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  2. 2

    Evaluation of the Ultimate Strength of the Ultra-High-Performance Fiber-Reinforced Concrete Beams by Bae, Baek-Il, Lee, Moon-Sung, Choi, Chang-Sik, Jung, Hyung-Suk, Choi, Hyun-Ki

    Published in Applied sciences (01-04-2021)
    “…Evaluation of the ultimate strength for the UHPFRC (ultra-high-performance fiber-reinforced concrete) flexural members was conducted. In this study, an…”
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  3. 3

    Flexural Strength and Stiffness of Donut-Type Voided Slab by Chung, Joo-Hong, Jung, Hyung-Suk, Choi, Hyun-Ki

    Published in Applied sciences (01-06-2022)
    “…The voided slab system has been known as an effective technique to replace a heavy reinforced concrete slab system without the decrease in flexural strength…”
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  4. 4

    Bond Characteristics of a Deformed Steel Bar Embedded in Donut-Type Voided Slab by Chung, Joo-Hong, Jung, Hyung-Suk, Choi, Hyun-Ki

    Published in Applied sciences (01-06-2022)
    “…In reinforced concrete (RC) structures, bond behavior between concrete and deformed steel bar (rebar) has a great effect on the structural behavior of members…”
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  5. 5

    Ferroelectric modulation of terahertz waves with graphene/ultrathin-Si:HfO2/Si structures by Jiang, Ran, Han, Zuyin, Sun, Weideng, Du, Xianghao, Wu, Zhengran, Jung, Hyung-Suk

    Published in Applied physics letters (12-10-2015)
    “…Ferroelectric-field-effect-tunable modulation of terahertz waves in graphene/Si:HfO2/Si stack structure was observed. The modulation shows distinct behaviors…”
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  6. 6

    Study of Metal–Dielectric Interface for Improving Electrical Properties and Reliability of DRAM Capacitor by Lim, HanJin, Choi, Jae Hyoung, Cho, Gihee, Chang, Jaewan, Kim, Younsoo, Jung, HyungSuk, Shin, Kyoung‐Sub, Seo, Hyungtak, Jeon, Hyeongtag

    Published in Advanced materials technologies (01-10-2023)
    “…The interface between a dielectric thin film and a metal electrode is studied to improve reliability as well as electrical properties of the…”
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  7. 7

    Two-Way Flexural Behavior of Donut-Type Voided Slabs by Chung, Joo-Hong, Jung, Hyung-Suk, Bae, Baek-il, Choi, Chang-Sik, Choi, Hyun-Ki

    “…Voided slab systems were developed using segmented void formers such as spherical or oval plastic balls for two-way slab applications. This type of slab is…”
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  8. 8

    Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties by Shin, Heecheol, Choi, Hyobin, Lim, Jaeseong, Lee, Wanggon, Mohit, Kumar, Kim, Younsoo, Jung, Hyung-Suk, Lim, Hanjin, Seo, Hyungtak

    Published in Journal of Asian Ceramic Societies (03-07-2022)
    “…The continuous scale-down of dynamic random-access memory (DRAM) requires shrinkage of high aspect ratio metal-insulator-metal (MIM) capacitance along with the…”
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  9. 9

    Experimental and Numerical Study on the Compression Behavior of Square Concrete-Filled Steel Tube Stub Columns with Steel Fiber-Reinforced High-Strength Concrete by Choi, Chang Sik, Chung, Joo-Hong, Choi, Hyun-Ki, Bae, Baek-Il, Jung, Hyung-Suk, Choi, Yun-Cheul

    Published in International journal of polymer science (01-01-2018)
    “…This study was conducted to evaluate the applicability of concrete-filled steel tube (CFT) columns made from high-performance construction materials. KBC2016,…”
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  10. 10

    Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone by Won, Seok-Jun, Jung, Hyung-Suk, Suh, Sungin, Jin Choi, Yu, Lee, Nae-In, Seong Hwang, Cheol, Joon Kim, Hyeong

    “…Silicon oxide thin film grown at low temperatures (<300–500 °C) is essential for a range of applications in semiconductor devices. In this study, silicon oxide…”
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  11. 11

    Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- k pMOSFETs by JO, Minseok, MAN CHANG, KIM, Seonghyun, JUNG, Hyung-Suk, CHOI, Rino, HWANG, Hyunsang

    Published in IEEE electron device letters (01-03-2009)
    “…Negative bias temperature instability (NBTI) in MOSFETs with high-dielectric-constant ( k ) gate dielectrics has been investigated using a novel pulse NBTI…”
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  12. 12

    Oxygen vacancy induced charge trapping and positive bias temperature instability in HfO2nMOSFET by Jo, Minseok, Park, Hokyung, Chang, Man, Jung, Hyung-Suk, Lee, Jong-Ho, Hwang, Hyunsang

    Published in Microelectronic engineering (01-09-2007)
    “…The charge trapping and positive bias temperature instability (PBTI) are investigated at different post deposition annealing conditions (PDA) in HfO2 nMOSFET…”
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  13. 13

    Experimental study on the cyclic behavior of steel fiber reinforced high strength concrete columns and evaluation of shear strength by Bae, Baek-Il, Chung, Joo-Hong, Choi, Hyun-Ki, Jung, Hyung-Suk, Choi, Chang-Sik

    Published in Engineering structures (15-02-2018)
    “…•Performance increase of high strength reinforced concrete columns by inclusion of steel fiber.•Crack control and decrease of crack angle according to the…”
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  14. 14

    Evaluation of punching shear strength of voided slabs considering the effect of the ratio b0/d by Chung, Joo-Hong, Bae, Baek-Il, Choi, Hyun-Ki, Jung, Hyung-Suk, Choi, Chang-Sik

    Published in Engineering structures (01-06-2018)
    “…•Test results of punching shear strength of voided slabs.•Numerical investigation of the punching shear strength of voided slab.•Punching shear strength…”
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  15. 15

    Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition by Cho, Deok-Yong, Jung, Hyung Suk, Yu, Il-Hyuk, Yoon, Jung Ho, Kim, Hyo Kyeom, Lee, Sang Young, Jeon, Sang Ho, Han, Seungwu, Kim, Jeong Hwan, Park, Tae Joo, Park, Byeong-Gyu, Hwang, Cheol Seong

    Published in Chemistry of materials (25-09-2012)
    “…The structural and electronic properties of HfO2 thin films grown by atomic layer deposition (ALD) under various ozone concentrations were investigated using…”
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  16. 16

    Nondestructive investigation of interface states in high-k oxide films on Ge substrate using X-ray absorption spectroscopy by Cho, Deok-Yong, Jung, Hyung-Suk, Yu, Il-Hyuk, Park, Won Goo, Cho, Suyeon, Kim, Useong, Oh, Se-Jung, Park, Byeong-Gyu, Chang, Fan-Hsiu, Lin, Hong-Ji, Hwang, Cheol Seong

    “…The unoccupied electronic structures of 5 nm thick high permittivity (k) oxides (HfO2, ZrO2, and Al2O3) and SiO2 films on Ge substrates were examined using O…”
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  17. 17

    Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET by JO, Minseok, PARK, Hokyung, LEE, Joon-Myoung, MAN CHANG, JUNG, Hyung-Suk, LEE, Jong-Ho, HWANG, Hyunsang

    Published in IEEE electron device letters (01-04-2008)
    “…Bias temperature instability (BTI) characteristics depending on postdeposition anneal (PDA) conditions were studied using dc (slow process) and pulse (fast…”
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  18. 18

    Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping by Park, Tae Joo, Kim, Jeong Hwan, Jang, Jae Hyuck, Lee, Choong-Ki, Na, Kwang Duk, Lee, Sang Young, Jung, Hyung-Suk, Kim, Miyoung, Han, Seungwu, Hwang, Cheol Seong

    Published in Chemistry of materials (27-07-2010)
    “…The gate leakage current density (J g) of ultrathin (∼3 nm) Al-doped HfO2 (Al:HfO2) films with an Al concentration of ∼11% was lower than that of the control…”
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  19. 19

    Monocliniclike local atomic structure in amorphous ZrO2 thin film by Cho, Deok-Yong, Jung, Hyung-Suk, Kim, Jeong Hwan, Hwang, Cheol Seong

    Published in Applied physics letters (04-10-2010)
    “…The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K-edge x-ray absorption…”
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