Search Results - "Hyun Wook Jung"

Refine Results
  1. 1

    Production of brown algae pyrolysis oils for liquid biofuels depending on the chemical pretreatment methods by Choi, Joonhyuk, Choi, Jae-Wook, Suh, Dong Jin, Ha, Jeong-Myeong, Hwang, Ji Won, Jung, Hyun Wook, Lee, Kwan-Young, Woo, Hee-Chul

    Published in Energy conversion and management (01-10-2014)
    “…•Pyrolysis of Saccharina japonica, brown algae to produce hydrocarbons.•Sulfuric acid pretreatment of macroalgae to remove inorganic elements.•CaCl2 treatment…”
    Get full text
    Journal Article
  2. 2

    Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process by Min, Byoung‐Gue, Lee, Jong‐Min, Yoon, Hyung Sup, Chang, Woo‐Jin, Park, Jong‐Yul, Kang, Dong Min, Chang, Sung‐Jae, Jung, HyunWook

    Published in ETRI journal (01-02-2023)
    “…We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range…”
    Get full text
    Journal Article
  3. 3

    Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization by Jung, Hyun-Wook, Jung, Woo-Shik, Yu, Hyun-Yong, Park, Jin-Hong

    Published in Journal of alloys and compounds (05-06-2013)
    “…Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of…”
    Get full text
    Journal Article
  4. 4

    A Study on the Oxygen Permeability Behavior of Nanoclay in a Polypropylene/Nanoclay Nanocomposite by Biaxial Stretching by Jung, Bich-Nam, Jung, Hyun-Wook, Kang, Dong-Ho, Kim, Gi-Hong, Shim, Jin-Kie

    Published in Polymers (17-08-2021)
    “…Polypropylene (PP) has poor oxygen barrier properties, therefore it is manufactured in a multi-layer structure with other plastics and metals, and has been…”
    Get full text
    Journal Article
  5. 5

    Operability coating window of dual-layer slot coating process using viscocapillary model by Ji, Ho Suk, Ahn, Won-Gi, Kwon, Ilyoung, Nam, Jaewook, Jung, Hyun Wook

    Published in Chemical engineering science (02-04-2016)
    “…The viscocapillary model for predicting the operability windows in a dual-slot coating process for two Newtonian liquids has been derived by means of a…”
    Get full text
    Journal Article
  6. 6

    Effect of methacryloxypropyl and phenyl functional groups on crosslinking and rheological and mechanical properties of ladder-like polysilsesquioxane hard coatings by Jung, Kevin Injoe, Hwang, Seon Oh, Kim, Na Hee, Lee, Dong Geun, Lee, Jung-Hyun, Jung, Hyun Wook

    Published in Progress in organic coatings (01-11-2018)
    “…•Ladder-like polysilsesquioxanes with different functional groups were synthesized.•Role of methacryloxypropyl and phenyl groups for coating application was…”
    Get full text
    Journal Article
  7. 7

    Physical and rheological properties of deasphalted oil produced from solvent deasphalting by Shin, Sangcheol, Lee, Jung Moo, Hwang, Ji Won, Jung, Hyun Wook, Nho, Nam Sun, Lee, Ki Bong

    “…•The physical and rheological properties of deasphalted oil (DAO) were investigated.•The portion of asphaltenes in DAO is reduced, resulting in low contaminant…”
    Get full text
    Journal Article
  8. 8

    Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs by Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Choi, Ilgyu, Lee, Sang Kyung, Kim, Seung Mo, Lee, Byoung Hun, Ahn, Ho-Kyun, Lim, Jong-Won

    Published in Current applied physics (01-07-2022)
    “…AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is…”
    Get full text
    Journal Article
  9. 9

    A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices by Min, Byoung-Gue, Chang, Sung-Jae, Jung, Hyun-Wook, Yoon, Hyung Sup, Lee, Jong-Min, Jang, Woo-Jin, Kang, Dong-Min

    Published in Journal of the Korean Physical Society (01-07-2020)
    “…In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the…”
    Get full text
    Journal Article
  10. 10

    W‐Band MMIC chipset in 0.1‐μm mHEMT technology by Lee, Jong‐Min, Chang, Woo‐Jin, Kang, Dong Min, Min, Byoung‐Gue, Yoon, Hyung Sup, Chang, Sung‐Jae, Jung, HyunWook, Kim, Wansik, Jung, Jooyong, Kim, Jongpil, Seo, Mihui, Kim, Sosu

    Published in ETRI journal (01-08-2020)
    “…We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house…”
    Get full text
    Journal Article
  11. 11

    Dynamic Change in Color Filter Layers during the Baking Process by Multi‐Speckle Diffusing Wave Spectroscopy by Park, Baek Sung, Hyung, Kyung Hee, Oh, Gwi Jeong, Jung, Hyun Wook

    Published in Chemical engineering & technology (01-12-2017)
    “…Undercut defects of color filter (CF) layers, which inevitably occur in UV curing and development processes for liquid crystal displays and white organic…”
    Get full text
    Journal Article
  12. 12

    Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact by Jung, Hyun-Wook, Chang, Sung-Jae, Ahn, Ho-Kyun, Kim, Haecheon, Lim, Jong-Won, Do, Jae-Won

    Published in Journal of the Korean Physical Society (01-05-2020)
    “…Ohmic contacts are formed by recess etching the source and the drain regions with line and dot patterns of a few hundred nanometers on an AlGaN/GaN…”
    Get full text
    Journal Article
  13. 13

    The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors by Do, Jae-Won, Jung, Hyun-Wook, Shin, Min Jeong, Ahn, Ho-Kyun, Kim, Haecheon, Kim, Ryun-Hwi, Cho, Kyu Jun, Chang, Sung-Jae, Min, Byoung-Gue, Yoon, Hyung Sup, Kim, Ji-Heon, Yang, Jin-Mo, Lee, Jung-Hee, Lim, Jong-Won

    Published in Thin solid films (30-04-2017)
    “…AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide…”
    Get full text
    Journal Article
  14. 14

    Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors by Chang, Sung-Jae, Cho, Kyu-Jun, Lee, Sang-Youl, Jeong, Hwan-Hee, Lee, Jae-Hoon, Jung, Hyun-Wook, Bae, Sung-Bum, Choi, Il-Gyu, Kim, Hae-Cheon, Ahn, Ho-Kyun, Lim, Jong-Won

    Published in Crystals (Basel) (01-11-2021)
    “…We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed…”
    Get full text
    Journal Article
  15. 15

    Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process by Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang 외

    Published in ETRI journal (28-02-2023)
    “…We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range…”
    Get full text
    Journal Article
  16. 16

    Effect of annealing on the crystallization and properties of electrospun polylatic acid and nylon 6 fibers by Cho, Ah-Ra, Shin, Dong Myeong, Jung, Hyun Wook, Hyun, Jae Chun, Lee, Joo Sung, Cho, Daehwan, Joo, Yong Lak

    Published in Journal of applied polymer science (15-04-2011)
    “…Electrospinning experiments for solutions of two polymers with different crystallization rates, polylatic acid (PLA), and nylon 6 solutions have been carried…”
    Get full text
    Journal Article
  17. 17
  18. 18

    Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator by Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won

    Published in Nanomaterials (Basel, Switzerland) (27-02-2023)
    “…Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor…”
    Get full text
    Journal Article
  19. 19

    Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications by Lee, Jong-Min, Ahn, Ho-Kyun, Jung, Hyun-Wook, Shin, Min Jeong, Lim, Jong-Won

    Published in Journal of the Korean Physical Society (01-09-2017)
    “…In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and…”
    Get full text
    Journal Article
  20. 20

    Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors by Kang, Soo Cheol, Jung, Hyun-Wook, Chang, Sung-Jae, Kim, Seung Mo, Lee, Sang Kyung, Lee, Byoung Hun, Kim, Haecheon, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Lim, Jong-Won

    Published in Nanomaterials (Basel, Switzerland) (24-10-2020)
    “…An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to…”
    Get full text
    Journal Article