Search Results - "Hyun Wook Jung"
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1
Production of brown algae pyrolysis oils for liquid biofuels depending on the chemical pretreatment methods
Published in Energy conversion and management (01-10-2014)“…•Pyrolysis of Saccharina japonica, brown algae to produce hydrocarbons.•Sulfuric acid pretreatment of macroalgae to remove inorganic elements.•CaCl2 treatment…”
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2
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Published in ETRI journal (01-02-2023)“…We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range…”
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3
Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization
Published in Journal of alloys and compounds (05-06-2013)“…Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of…”
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4
A Study on the Oxygen Permeability Behavior of Nanoclay in a Polypropylene/Nanoclay Nanocomposite by Biaxial Stretching
Published in Polymers (17-08-2021)“…Polypropylene (PP) has poor oxygen barrier properties, therefore it is manufactured in a multi-layer structure with other plastics and metals, and has been…”
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5
Operability coating window of dual-layer slot coating process using viscocapillary model
Published in Chemical engineering science (02-04-2016)“…The viscocapillary model for predicting the operability windows in a dual-slot coating process for two Newtonian liquids has been derived by means of a…”
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6
Effect of methacryloxypropyl and phenyl functional groups on crosslinking and rheological and mechanical properties of ladder-like polysilsesquioxane hard coatings
Published in Progress in organic coatings (01-11-2018)“…•Ladder-like polysilsesquioxanes with different functional groups were synthesized.•Role of methacryloxypropyl and phenyl groups for coating application was…”
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7
Physical and rheological properties of deasphalted oil produced from solvent deasphalting
Published in Chemical engineering journal (Lausanne, Switzerland : 1996) (01-12-2014)“…•The physical and rheological properties of deasphalted oil (DAO) were investigated.•The portion of asphaltenes in DAO is reduced, resulting in low contaminant…”
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8
Effects of DC and AC stress on the VT shift of AlGaN/GaN MIS-HEMTs
Published in Current applied physics (01-07-2022)“…AlGaN/GaN MIS-HEMTs with adjusted VT were fabricated using a recess gate to investigate the effect on actual operation when the polarity of the gate voltage is…”
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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Published in Journal of the Korean Physical Society (01-07-2020)“…In the fabrication of InAlAs/InGaAs metamorphic high-electron-mobility transistor (mHEMT), the determination of whether etching has been completed to the…”
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10
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
Published in ETRI journal (01-08-2020)“…We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house…”
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11
Dynamic Change in Color Filter Layers during the Baking Process by Multi‐Speckle Diffusing Wave Spectroscopy
Published in Chemical engineering & technology (01-12-2017)“…Undercut defects of color filter (CF) layers, which inevitably occur in UV curing and development processes for liquid crystal displays and white organic…”
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12
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Published in Journal of the Korean Physical Society (01-05-2020)“…Ohmic contacts are formed by recess etching the source and the drain regions with line and dot patterns of a few hundred nanometers on an AlGaN/GaN…”
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13
The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors
Published in Thin solid films (30-04-2017)“…AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated using a gate recess process and a surface treatment with tetramethylammonium hydroxide…”
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14
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Published in Crystals (Basel) (01-11-2021)“…We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed…”
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15
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Published in ETRI journal (28-02-2023)“…We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range…”
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16
Effect of annealing on the crystallization and properties of electrospun polylatic acid and nylon 6 fibers
Published in Journal of applied polymer science (15-04-2011)“…Electrospinning experiments for solutions of two polymers with different crystallization rates, polylatic acid (PLA), and nylon 6 solutions have been carried…”
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17
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Published in Nanomaterials (Basel, Switzerland) (30-10-2020)“…The device performance deterioration mechanism caused by the total ionizing dose effect after the γ-ray irradiation was investigated in GaN-based…”
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18
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Published in Nanomaterials (Basel, Switzerland) (27-02-2023)“…Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor…”
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19
Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications
Published in Journal of the Korean Physical Society (01-09-2017)“…In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and…”
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20
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Published in Nanomaterials (Basel, Switzerland) (24-10-2020)“…An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to…”
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