Search Results - "Hyoung Sub Kim"

Novel Approach for the Reduction of Leakage Current Characteristics of 20 nm DRAM Capacitors With ZrO2-Based High-k Dielectrics by Jong-Min Lee, Dong-Sik Park, Seung-chul Yew, Soo-Ho Shin, Jun-Yong Noh, Hyoung-Sub Kim, Byoung-Deog Choi

“…In order to produce a dynamic random access memory (DRAM) of 20 nm or less, the most important concern regarding development is to reduce the leakage current…”
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2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory by Seo, Min-Woong, Chu, Myunglae, Jung, Hyun-Yong, Kim, Suksan, Song, Jiyoun, Bae, Daehee, Lee, Sanggwon, Lee, Junan, Kim, Sung-Yong, Lee, Jongyeon, Kim, Minkyung, Lee, Gwi-Deok, Shim, Heesung, Um, Changyong, Kim, Changhwa, Baek, In-Gyu, Kwon, Doowon, Kim, Hongki, Choi, Hyuksoon, Go, Jonghyun, Ahn, Jungchak, Lee, Jae-Kyu, Moon, Chang-Rok, Lee, Kyupil, Kim, Hyoung-Sub

“…This article presents a low random noise, a low-power, and a high-speed 2-mega pixels (Mp) global-shutter (GS)-type CMOS image sensor (CIS) using an advanced…”
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Risk factor analysis of postoperative kyphotic change in subaxial cervical alignment after upper cervical fixation by Kim, Hyoung-Sub, Lee, Jong Beom, Park, Jong Hyeok, Lee, Ho Jin, Lee, Jung Jae, Dutta, Shumayou, Kim, Il Sup, Hong, Jae Taek

“…Little is known about the risk factors for postoperative subaxial cervical kyphosis following craniovertebral junction (CVJ) fixation. The object of this study…”
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Investigation of transient relaxation under static and dynamic stress in Hf-based gate oxides by Akbar, M.S., Changhwan Choi, Se Jong Rhee, Krishnan, S.A., Chang Yong Kang, Man Hong Zhang, Tackhwi Lee, Ok, I., Feng Zhu, Hyoung-Sub Kim, Lee, J.C.

“…Transient relaxation, which has been addressed as an undesirable issue in high-k alternate gate dielectrics, has been studied systematically. In Hf-based…”
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Hafnium Titanate bilayer structure multimetal dielectric nMOSCAPs by Se Jong Rhee, Feng Zhu, Hyoung-Sub Kim, Chang Hwan Choi, Chang Yong Kang, Manhong Zhang, Tackhwi Lee, Ok, I., Krishnan, S.A., Lee, J.C.

“…A novel approach of fabricating laminated TiO/sub 2//HfO/sub 2/ bilayer multimetal oxide dielectric has been developed for high-performance CMOS applications…”
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New Method for Reduction of the Capacitor Leakage Failure Rate Without Changing the Capacitor Structure or Materials in DRAM Mass Production by Lee, Jong-Min, Choi, Pyung-Ho, Kim, Soon-Kon, Oh, Jung-Hwan, Shin, Soo-Ho, Noh, Jun-Yong, Kim, Hyoung-Sub, Choi, Byoung-Deog

“…In the development of dynamic random access memory (DRAM) with a device size of 20 nm or less, the leakage current of a capacitor with high-k dielectrics is…”
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Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Lee, Tackhwi, Zhu, Feng, Yu, Lu, Lee, Jack C.

“…In this letter, the authors present the capacitance-voltage and current-voltage characteristics of TaN∕HfO2∕n-GaAs metal-oxide-semiconductor capacitors with…”
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Multidimensional ZnO light-emitting diode structures grown by metal organic chemical vapor deposition on p - Si by Kim, Dong Chan, Han, Won Suk, Cho, Hyung Koun, Kong, Bo Hyun, Kim, Hyoung Sub

“…A multidimensional ZnO light-emitting diode (LED) structure comprising film/nanorods/substrate was fabricated on a p -type Si substrate using metal organic…”
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Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Choi, Changhwan, Lee, Tackhwi, Zhu, Feng, Thareja, Gaurav, Yu, Lu, Lee, Jack C.

“…We present the capacitance-voltage characteristics of TaN∕HfO2∕n-GaAs metaloxide-semiconductor capacitors, with an equivalent oxide thickness (EOT) of 10.9Å,…”
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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric by Zhao, Han, Shahrjerdi, Davood, Zhu, Feng, Zhang, Manhong, Kim, Hyoung-Sub, OK, Injo, Yum, Jung Hwan, Park, Sung Il, Banerjee, Sanjay K., Lee, Jack C.

“…We present n-channel enhancement-mode inversion-type indium phosphide (InP) metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited…”
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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer by Kim, Hyoung-Sub, Ok, Injo, Zhang, Manhong, Zhu, F., Park, S., Yum, J., Zhao, Han, Lee, Jack C.

“…The primary goal of this work is to investigate the capability of gate oxide scaling down in HfO2-based GaAs metal-oxide-semiconductor capacitor (MOSCAP) using…”
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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer by OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav

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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer by Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Majhi, Prashant, Goel, N., Tsai, W., Gaspe, C. K., Santos, M. B.

“…In this letter, we present electrical characteristics of HfO2-based metal-oxide-semiconductor capacitors (MOSCAPs) on n- and p-type GaAs, In0.53Ga0.47As, InAs,…”
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Extraordinarily Long-Term PosttraumaticCerebrospinal Fluid Fistula by Hyoung Sub Kim, Jin Woo Hur, Jong Won Lee, Hyun Koo Lee

“…Most posttraumatic cerebrospinal fluid (CSF) leakage is noticed by the patients with the first symptom, rhinorrhea. A 38-year-old woman presented with frequent…”
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Flatband voltage instability characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Ge layer by Kim, Hyoung-Sub, Ok, I., Zhang, M., Zhu, F., Park, S., Yum, J., Zhao, H., Lee, Jack C., Oh, Jungwoo, Majhi, Prashant

“…This work investigates the flatband voltage instability of HfO2-based GaAs metal-oxide-semiconductor (MOS) capacitor with a thin germanium (Ge) interfacial…”
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Highly reliable polysilicon oxide grown by electron cyclotron resonance nitrous oxide plasma by Lee, Nae-In, Lee, Jin-Woo, Hur, Sung-Hoi, Kim, Hyoung-Sub, Han, Chul-Hi

“…Highly reliable inter-polysilicon oxide (polyoxide) for nonvolatile memory applications has been achieved using electron cyclotron resonance (ECR) N/sub…”
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Metal-oxide-semiconductor capacitors on GaAs with germanium nitride passivation layer by Zhao, Han, Kim, Hyoung-Sub, Zhu, Feng, Zhang, Manhong, OK, Injo, Park, Sung Il, Yum, Jung Hwan, Lee, Jack C.

“…We present gallium arsenide (GaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with a thin Hf O 2 gate dielectric and a thin germanium nitride ( Ge x N y )…”
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Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy2O3) into HfO2 n-MOSFETs by LEE, Tackhwi, SE JONG RHEE, LEE, Jack C, CHANG YONG KANG, FENG ZHU, KIM, Hyoung-Sub, CHOI, Changhwan, OK, Injo, MANHONG ZHANG, KRISHNAN, Siddarth, THAREJA, Gaurav

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Chip package interaction in micro bump and TSV structure by Ha-Young You, Yuchul Hwang, Jung-Woo Pyun, Young-Gyun Ryu, Hyoung-Sub Kim

“…The purpose of this paper is chip package interaction(CPI) of fine pitch micro bump and trough silicon via(TSV). We focus on hot temperature storage(HTS) and…”
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The formation of Ti-polycide gate structure with high thermal stability using chemical-mechanical polishing (CMP) planarization technology by Hyoung-Sub Kim, Dae-Hong Ko, Dae-Lok Bae, Fujihara, K., Ho-Kyu Kang

“…A planarized Ti-polycide gate structure with high thermal stability has been developed using a chemical-mechanical polishing (CMP) process for the application…”
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