Search Results - "Hybertsen, M.S."

Probing the conductance superposition law in single-molecule circuits with parallel paths by Vazquez, H., Skouta, R., Schneebeli, S., Kamenetska, M., Breslow, R., Venkataraman, L., Hybertsen, M.S.

“…According to Kirchhoff's circuit laws, the net conductance of two parallel components in an electronic circuit is the sum of the individual conductances…”
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Simulation of semiconductor quantum well lasers by Alam, M.A., Hybertsen, M.S., Smith, R.K., Baraff, G.A.

“…A new quantum well laser simulator that accounts for details of carrier transport, distribution of two-dimensional (2-D) carriers within the quantum well,…”
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Visualizing Individual Nitrogen Dopants in Monolayer Graphene by Zhao, Liuyan, He, Rui, Rim, Kwang Taeg, Schiros, Theanne, Kim, Keun Soo, Zhou, Hui, Gutiérrez, Christopher, Chockalingam, S. P., Arguello, Carlos J., Pálová, Lucia, Nordlund, Dennis, Hybertsen, Mark S., Reichman, David R., Heinz, Tony F., Kim, Philip, Pinczuk, Aron, Flynn, George W., Pasupathy, Abhay N.

“…In monolayer graphene, substitutional doping during growth can be used to alter its electronic properties. We used scanning tunneling microscopy, Raman…”
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A theoretical investigation of the characteristic temperature T0 for semiconductor lasers by Witzigmann, B, Hybertsen, M.S

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A theoretical investigation of the characteristic temperature T/sub 0/ for semiconductor lasers by Witzigmann, B., Hybertsen, M.S.

“…The temperature dependence of the characteristic temperature T/sub 0/ of semiconductor quantum-well lasers is investigated using detailed simulations. The…”
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Enhanced Static Approximation to the Electron Self-Energy for Efficient Calculation of Quasiparticle Energies by Kang, W., Hybertsen, M.S.

“…An enhanced static approximation for the electron self-energy operator is proposed for efficient calculation of quasiparticle energies. Analysis of the static…”
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Quasiparticle and Optical Properties of Rutile and Anatase Ti2O2 by Kang, W., Hybertsen, M.S.

“…Quasiparticle excitation energies and optical properties of TiO{sub 2} in the rutile and anatase structures are calculated using many-body perturbation-theory…”
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Phase diagram, structure, and electronic properties of (Ga 1 − x Zn x )(N 1 − x O x ) solid solutions from DFT-based simulations by Li, Li, Muckerman, James T., Hybertsen, Mark S., Allen, Philip B.

“…We construct an accurate cluster expansion for the (Ga{sub 1-x}Zn{sub x})(N{sub 1-x}O{sub x}) solid solution, based on density functional theory (DFT). The…”
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Microscopic simulation of the temperature dependence of static and dynamic 1.3-/spl mu/m multi-quantum-well laser performance by Witzigmann, B., Hybertsen, M.S., Reynolds, C.L., Belenky, G.L., Shterengas, L., Shtengel, G.E.

“…The temperature dependence of the performance of 1.3-/spl mu/m Fabry-Perot (FP) multiple-quantum-well (MQW) lasers is analyzed using detailed microscopic…”
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Microscopic simulation of the temperature dependence of static and dynamic 1.3-[mu]m multi-quantum-well laser performance by Witzigmann, B, Hybertsen, M.S, Reynolds, C.L, Belenky, G.L, Shterengas, L, Shtengel, G.E

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Direct measurement of lateral carrier leakage in 1.3-/spl mu/m InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers by Belenky, G., Shterengas, L., Reynolds, C.L., Focht, M.W., Hybertsen, M.S., Witzigmann, B.

“…1.3-/spl mu/m InGaAsP multiple-quantum-well (MQW) capped mesa buried heterostructure (CMBH) lasers with mesa widths ranging from 1 /spl mu/m (standard single…”
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Direct measurement of lateral carrier leakage in 1.3-[mu]m InGaAsP multiple-quantum-well capped mesa buried heterostructure lasers by Belenky, G, Shterengas, L, Reynolds, C.L. JR, Focht, M.W, Hybertsen, M.S, Witzigmann, B

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Microscopic simulation of the temperature dependence of static and dynamic 1.3-μm multi-quantum-well laser performance by WITZIGMANN, Bernd, HYBERTSEN, Mark S, REYNOLDS, C. Lewis, BELENKY, Gregory L, SHTERENGAS, Leon, SHTENGEL, Gleb E

“…The temperature dependence of the performance of 1.3- mu m Fabry-Perot (FP) multiple-quantum-well (MQW) lasers is analyzed using detailed microscopic…”
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Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-[mu]m InGaAsP-InP multiple-quantum-well lasers by Belenky, G, Reynolds, C.L, Shterengas, L, Hybertsen, M.S, Donetsky, D.V, Shtengel, G.E, Luryi, S

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Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers : Experiment and modeling by BELENKY, G. L, REYNOLDS, C. L, SMITH, L. E, DONETSKY, D. V, SHTENGEL, G. E, HYBERTSEN, M. S, ALAM, M. A, BARAFF, G. A, SMITH, R. K, KAZARINOV, R. F, WINN, J

“…In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the…”
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Effect of p-doping on the temperature dependence of differential gain in FP and DFB 1.3-μm InGaAsP-InP multiple-quantum-well lasers by Belenky, G., Reynolds, C.L., Shterengas, L., Hybertsen, M.S., Donetsky, D.V., Shtengel, G.E., Luryi, S.

“…The temperature dependence of differential gain dG/dn for 1.3-μm InGaAsP-InP FP and DFB lasers with two profiles of p-doping was obtained from RIN measurements…”
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Role of Carrier Capture in Microscopic Simulation of Multi-Quantum-Well Semiconductor Laser Diodes by Hybertsen, M.S, Witzigmann, B, Alam, M.A, Smith, R.K

“…Microscopic laser simulation for multi-quantum-well devices must include conventional carrier transport, properties of carriers bound in the quantum wells, and…”
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Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling by Belenky, G.L., Reynolds, C.L., Donetsky, D.V., Shtengel, G.E., Hybertsen, M.S., Alam, M.A., Baraff, G.A., Smith, R.K., Kazarinov, R.F., Winn, J., Smith, L.E.

“…In this paper, we study both experimentally and theoretically how the change of the p-doping profile, particularly the p-i junction placement, affects the…”
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Many-body calculation of the surface-state energies for Si(111)2 times 1 by Northrup, J.E., Hybertsen, M.S., Louie, S.G.

“…The surface-state excitation energies for the Si(111)2{times}1 surface have been calculated in the {ital GW} approximation. The energy position and the…”
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Analysis of gain in determining T/sub 0/ in 1.3 /spl mu/m semiconductor lasers by Ackerman, D.A., Shtengel, G.E., Hybertsen, M.S., Morton, P.A., Kazarinov, R.F., Tanbun-Ek, T., Logan, R.A.

“…Rapid decrease of differential gain has been determined to dominate the temperature dependence of threshold current in 1.3-/spl mu/m multiquantum well and bulk…”
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