Search Results - "Hwang Seong Cheol"

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity by Hyuk Park, Min, Joon Kim, Han, Jin Kim, Yu, Moon, Taehwan, Seong Hwang, Cheol

“…To elucidate the origin of the formation of the ferroelectric phase in Hf0.5Zr0.5O2 films, the effects of film strain and crystallographic orientation on the…”
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Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature by Hyuk Park, Min, Joon Kim, Han, Jin Kim, Yu, Lee, Woongkyu, Moon, Taehwan, Seong Hwang, Cheol

“…The effects of annealing temperature (Tanneal) and film thickness (tf) on the crystal structure and ferroelectric properties of Hf0.5Zr0.5O2 films were…”
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Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold by Lim, Hyungkwang, Kim, Inho, Kim, Jin-Sang, Seong Hwang, Cheol, Jeong, Doo Seok

“…Chemical synapses are important components of the large-scaled neural network in the hippocampus of the mammalian brain, and a change in their weight is…”
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Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment by Yang, Shinhyuk, Hwan Ji, Kwang, Ki Kim, Un, Seong Hwang, Cheol, Ko Park, Sang-Hee, Hwang, Chi-Sun, Jang, Jin, Kyeong Jeong, Jae

“…This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT…”
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Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure by Wei Zhou, Li, Long Shao, Xing, Yuan Li, Xiang, Jiang, Hao, Chen, Ran, Jean Yoon, Kyung, Jin Kim, Hae, Zhang, Kailiang, Zhao, Jinshi, Seong Hwang, Cheol

“…Reliability and uniformity in resistance switching behaviours in top electrode Cu-sputtered TiO2-bottom electrode Pt memory structure were greatly improved by…”
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Prospective of Semiconductor Memory Devices: from Memory System to Materials by Hwang, Cheol Seong

“…The ever‐increasing demand for higher‐capacity digital memory shows no sign of declining. The conventional strategy for meeting such demand, i.e. shrinking of…”
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Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments by Hwan Kim, Gun, Ho Lee, Jong, Yeong Seok, Jun, Ji Song, Seul, Ho Yoon, Jung, Jean Yoon, Kyung, Hwan Lee, Min, Min Kim, Kyung, Dong Lee, Hyung, Wook Ryu, Seung, Joo Park, Tae, Seong Hwang, Cheol

“…A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS…”
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Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory by Ho Lee, Jong, Hwan Kim, Gun, Bae Ahn, Young, Woon Park, Ji, Wook Ryu, Seung, Seong Hwang, Cheol, Joon Kim, Hyeong

“…Threshold-switching (TS) and selector performances of Si-As-Te thin films for crossbar resistive memory were studied. Composition of the film was the major…”
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Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach by Oh, Seungha, Seob Yang, Bong, Jang Kim, Yoon, Sook Oh, Myeong, Jang, Mi, Yang, Hoichang, Kyeong Jeong, Jae, Seong Hwang, Cheol, Joon Kim, Hyeong

“…This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The…”
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The fundamentals and applications of ferroelectric HfO2 by Schroeder, Uwe, Park, Min Hyuk, Mikolajick, Thomas, Hwang, Cheol Seong

“…Since the first report of ferroelectricity in a Si-doped HfO 2 film in 2011, HfO 2 -based materials have attracted much interest from the ferroelectric…”
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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films by Lee, Joohwi, Cho, Deok-Yong, Jung, Jisim, Ki Kim, Un, Ho Rha, Sang, Seong Hwang, Cheol, Choi, Jung-Hae

“…The influence of structural disorder on the electronic structure of amorphous ZnSnO3 was examined by ab-initio calculations. The calculation results are…”
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Improved Electronic Performance of HfO2/SiO2 Stacking Gate Dielectric on 4H SiC by KUAN YEW CHEONG, JEONG HYUN MOON, TAE JOO PARK, JEONG HWAN KIM, CHEOL SEONG HWANG, HYEONG JOON KIM, BAHNG, Wook, KIM, Nam-Kyun

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Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor by Ho Rha, Sang, Ki Kim, Un, Jung, Jisim, Suk Hwang, Eun, Choi, Jung-Hae, Seong Hwang, Cheol

“…Two serially connected and vertically integrated amorphous-In2Ga2ZnO7 thin film transistors (V-TFTs) with ∼600 and 400-nm channel lengths were fabricated. Top…”
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The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application by Sim Jung, Ji, Rha, Sang-Ho, Ki Kim, Un, Jang Chung, Yoon, Soo Jung, Yoon, Choi, Jung-Hae, Seong Hwang, Cheol

“…The charge trapping characteristics of 30-nm-thick Si3N4 and 3-nm-thick Al2O3 layers between amorphous In-Ga-Zn-O thin films and 100-nm-thick blocking oxides…”
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An artificial nociceptor based on a diffusive memristor by Yoon, Jung Ho, Wang, Zhongrui, Kim, Kyung Min, Wu, Huaqiang, Ravichandran, Vignesh, Xia, Qiangfei, Hwang, Cheol Seong, Yang, J. Joshua

“…A nociceptor is a critical and special receptor of a sensory neuron that is able to detect noxious stimulus and provide a rapid warning to the central nervous…”
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Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films by Park, Min Hyuk, Lee, Young Hwan, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Müller, Johannes, Kersch, Alfred, Schroeder, Uwe, Mikolajick, Thomas, Hwang, Cheol Seong

“…The recent progress in ferroelectricity and antiferroelectricity in HfO2‐based thin films is reported. Most ferroelectric thin film research focuses on…”
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Review of Semiconductor Flash Memory Devices for Material and Process Issues by Kim, Seung Soo, Yong, Soo Kyeom, Kim, Whayoung, Kang, Sukin, Park, Hyeon Woo, Yoon, Kyung Jean, Sheen, Dong Sun, Lee, Seho, Hwang, Cheol Seong

“…Vertically integrated NAND (V-NAND) flash memory is the main data storage in modern handheld electronic devices, widening its share even in the data centers…”
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Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition by Park, Jong Hoon, Seo, Jangwon, Park, Sangman, Shin, Seong Sik, Kim, Young Chan, Jeon, Nam Joong, Shin, Hee-Won, Ahn, Tae Kyu, Noh, Jun Hong, Yoon, Sung Cheol, Hwang, Cheol Seong, Seok, Sang Il

“…Highly transparent and nanostructured nickel oxide (NiO) films through pulsed laser deposition are introduced for efficient CH3NH3PbI3 perovskite solar cells…”
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Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis(ethyl-methyl-amino)silane and ozone by Won, Seok-Jun, Jung, Hyung-Suk, Suh, Sungin, Jin Choi, Yu, Lee, Nae-In, Seong Hwang, Cheol, Joon Kim, Hyeong

“…Silicon oxide thin film grown at low temperatures (<300–500 °C) is essential for a range of applications in semiconductor devices. In this study, silicon oxide…”
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Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability by Park, Min Hyuk, Kim, Han Joon, Kim, Yu Jin, Moon, Taehwan, Kim, Keum Do, Hwang, Cheol Seong

“…The promising energy storage properties of new lead‐free antiferroelectric HfxZr1‐xO2 (x = 0.1–0.4) films with high energy storage density are reported. The…”
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