Search Results - "Hwang, Wansik"

  • Showing 1 - 3 results of 3
Refine Results
  1. 1
    Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices

    Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices by WanSik Hwang, Chan, D., Byung Jin Cho

    Published in IEEE transactions on electron devices (01-09-2008)
    “…Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that…”
    Get full text
    Journal Article
    Save to List
    Saved in:
  2. 2
    Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal Dichalcogenide Transistors

    Improvement of Metal-Semiconductor Contact from Schottky to Ohmic by Cu Doping in Transition Metal Dichalcogenide Transistors by Liu, Maomao, Shahi, Simran, Fathipour, Sara, Hwang, Wansik, Remskar, Maja, Seabaugh, Alan, Li, Huamin

    “…Metal-semiconductor (MS) contacts were changed from Schottky to Ohmic in synthesized tungsten disulfide (WS 2 ), due to Cu doping during the synthesis…”
    Get full text
    Conference Proceeding
    Save to List
    Saved in:
  3. 3
    Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors

    Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors by Liu, Maomao, Wei, Sichen, Shahi, Simran, Jaiswal, Hemendra Nath, Paletti, Paolo, Fathipour, Sara, Remskar, Maja, Jiao, Jun, Hwang, Wansik, Yao, Fei, Li, Huamin

    Published 15-01-2020
    “…High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the…”
    Get full text
    Journal Article
    Save to List
    Saved in:

Search Tools: