Search Results - "Hwang, Hyeon Jun"

Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer by Kim, Cihyun, Yoo, Tae Jin, Chang, Kyoung Eun, Kwon, Min Gyu, Hwang, Hyeon Jun, Lee, Byoung Hun

“…The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al interfacial layer between…”
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Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method by Lee, Young Gon, Kang, Chang Goo, Cho, Chunhum, Kim, Yonghun, Hwang, Hyeon Jun, Lee, Byoung Hun

“…Unstable characteristics of graphene field effect transistors (FETs) have generated concerns about the feasibility of graphene electronic devices. Two dominant…”
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Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs by Hwang, Hyeon Jun, Kim, Seung Mo, Lee, Byoung Hun

“…In this study, the domain switching mechanism of ferroelectric HZO thin films is investigated by analyzing the bulk charge of a graphene field‐effect…”
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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics by Lee, Young Gon, Kang, Chang Goo, Jung, Uk Jin, Kim, Jin Ju, Hwang, Hyeon Jun, Chung, Hyun-Jong, Seo, Sunae, Choi, Rino, Lee, Byoung Hun

“…Device instabilities of graphene metal-oxide-semiconductor field effect transistors such as hysteresis and Dirac point shifts have been attributed to charge…”
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Dual-channel P-type ternary DNTT–graphene barristor by Lee, Yongsu, Kim, Seung-Mo, Kim, Kiyung, Kim, So-Young, Lee, Ho-In, Kwon, Heejin, Lee, Hae-Won, Kim, Chaeeun, Some, Surajit, Hwang, Hyeon Jun, Lee, Byoung Hun

“…P -type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p -type…”
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Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices by Jun, Jae Hyeon, Lee, Yongsu, Lee, Hae‐Won, Kim, Minjae, Hwang, Hyeon Jun, Lee, Byoung Hun

“…The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique…”
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Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors by Kang, Chang Goo, Lee, Young Gon, Lee, Sang Kyung, Park, Eunji, Cho, Chunhum, Lim, Sung Kwan, Hwang, Hyeon Jun, Lee, Byoung Hun

“…The origin of the device instability of chemical vapor deposited graphene metal oxide semiconductor field effect transistor has been investigated while varying…”
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Chemically doped graphene based ternary field effect transistors by Kim, So-Young, Kim, Min Beom, Hwang, Hyeon Jun, Allouche, Billal, Lee, Byoung Hun

“…Chemically doped graphene was used to fabricate a ternary graphene field effect transistor. A graphene p−n junction was formed by polymer doping, which was…”
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Facile process to clean PMMA residue on graphene using KrF laser annealing by Hwang, Hyeon Jun, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

“…Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile…”
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Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency by Hwang, Hyeon Jun, Kim, So-Young, Lee, Sang Kyung, Lee, Byoung Hun

“…A reconfigurable passive device that can manipulate its resonant frequency by controlling its quantum capacitance value without requiring complicated equipment…”
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Performance enhancement of graphene/Ge near-infrared photodetector by modulating the doping level of graphene by Kwon, Min Gyu, Kim, Cihyun, Chang, Kyoung Eun, Yoo, Tae Jin, Kim, So-Young, Hwang, Hyeon Jun, Lee, Sanghan, Lee, Byoung Hun

“…In this paper, we improved the performance of a near-infrared graphene/germanium heterojunction photodetector at atmospheric pressure and at room temperature…”
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High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction by Kim, Cihyun, Yoo, Tae Jin, Kwon, Min Gyu, Chang, Kyoung Eun, Hwang, Hyeon Jun, Lee, Byoung Hun

“…The structure of a gate-controlled graphene/germanium hybrid photodetector was optimized by splitting the active region to achieve highly sensitive infrared…”
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Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition by Huang, Jie, Lucero, Antonio T., Cheng, Lanxia, Hwang, Hyeon Jun, Ha, Min-Woo, Kim, Jiyoung

“…In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer…”
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Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process by Lee, Yongsu, Kwon, Heejin, Kim, Seung-Mo, Lee, Ho-In, Kim, Kiyung, Lee, Hae-Won, Kim, So-Young, Hwang, Hyeon Jun, Lee, Byoung Hun

“…A p -type ternary logic device with a stack-channel structure is demonstrated using an organic p -type semiconductor, dinaphtho[2,3- b :2',3'- f ]thieno[3,2- b…”
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Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors by Gon Lee, Young, Ji Kim, Yun, Goo Kang, Chang, Cho, Chunhum, Lee, Sangchul, Jun Hwang, Hyeon, Jung, Ukjin, Hun Lee, Byoung

“…Graphene has attracted attention because of its extraordinarily high mobility. However, procedures to extract mobility from graphene metal-oxide semiconductor…”
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Graphene–ZnO:N barristor on a polyethylene naphthalate substrate by Hwang, Hyeon Jun, Heo, Sunwoo, Yoo, Won Beom, Lee, Byoung Hun

“…Graphene–ZnO:N Schottky junction barristors are fabricated on a flexible polyethylene naphthalate substrate utilizing a low thermal budget integration process…”
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Correlation between the hysteresis and the initial defect density of graphene by Cho, Chunhum, Gon Lee, Young, Jung, Ukjin, Goo Kang, Chang, Lim, Sungkwan, Jun Hwang, Hyeon, Choi, Hojun, Hun Lee, Byoung

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Direct Defect-Level Analysis of Metal-Insulator-Metal Capacitor Using Internal Photoemission Spectroscopy by Yoo, Tae Jin, Hwang, Hyeon Jun, Kang, Soo Cheol, Heo, Sunwoo, Lee, Ho-In, Lee, Young Gon, Park, Hokyung, Lee, Byoung Hun

“…Barrier height (<inline-formula> <tex-math notation="LaTeX">\phi _{b} </tex-math></inline-formula>), trap state, bandgap (<inline-formula> <tex-math…”
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Channel Defect Profiling and Passivation for ZnO Thin-Film Transistors by Kang, Soo Cheol, Kim, So Young, Lee, Sang Kyung, Kim, Kiyung, Allouche, Billal, Hwang, Hyeon Jun, Lee, Byoung Hun

“…The electrical characteristics of Zinc oxide (ZnO) thin-film transistors are analyzed to apprehend the effects of oxygen vacancies after vacuum treatment. The…”
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Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC by Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Lee, Seung Yong, Kang, Chang Goo, Hwang, Hyunsang, Lee, Byoung Hun

“…Wrinkle free few layer graphene was demonstrated by a graphitization of 4H-SiC substrates using a high power pulsed KrF laser. Wrinkles often observed after…”
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