Search Results - "Hwang, Heedon"

Shapes of InAs quantum dots on InGaAs∕InP by Hwang, Heedon, Yoon, Sukho, Kwon, Hyeok, Yoon, Euijoon, Kim, Hong-Seung, Lee, Jeong Yong, Cho, Benjamin

“…InAs self-assembled quantum dots were grown on InGaAs lattice-matched on InP by metalorganic chemical vapor deposition. The facet formation on the dot was…”
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Gate oxide effect on wafer level reliability of next generation dram transistors by Yu Gyun Shin, Kab-Jin Nam, Heedon Hwang, Jeong Hee Han, Sangjin Hyun, Siyoung Choi, Joo-Tae Moon

“…Wafer level reliability (WLR) issues of DRAM cell and peripheral transistors are discussed. Since the 70 nm technology node, recessed transistors have been…”
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Possibility of Two-Step As-Desorption from (001) InP Using Surface Photoabsorption by Young Seong, Tae-Wan Lee, Young-Dong Kim, Young-Dong Kim, Heedon Hwang, Heedon Hwang, Sukho Yoon, Sukho Yoon, Euijoon Yoon, Euijoon Yoon

“…We present an in situ investigation of As-desorption from the (001) InP surface using surface photoabsorption (SPA). At 470°C, we observed that the SPA signals…”
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Analysis of P adsorption and desorption on the (001) InP surface using surface photoabsorption by Lee, Tae-Wan, Hwang, Heedon, Moon, Youngboo, Yoon, Euijoon, Kim, Young Dong

“…We present an in situ study of P desorption and adsorption on the (001) InP surface using surface photoabsorption (SPA). The SPA spectra show three peaks at…”
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Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots by Yoon, Sukho, Moon, Youngboo, Lee, Tae-Wan, Hwang, Heedon, Yoon, Euijoon, Kim, Young Dong, Lee, Uk Hyun, Lee, Donghan, Kim, Hong-Seung, Lee, Jeong Yong

“…We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under…”
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Analysis of Surface Photoabsorption Spectra of (001) InP Surfaces by Kim, Young-Dong, Lee, Tae-Wan, Hwang, Heedon, Moon, Youngboo, Yoon, Euijoon, Nakamura, Fumihiko

“…We present an in situ surface photoabsorption (SPA) study on surface structures of (001) InP surfaces. Conventional subtraction spectra of SPA on (001) InP…”
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A Printable Form of Single-Crystalline Gallium Nitride for Flexible Optoelectronic Systems by Lee, Keon Jae, Lee, Jaeseob, Hwang, Heedon, Reitmeier, Zachary J., Davis, Robert F., Rogers, John A., Nuzzo, Ralph G.

“…Fine print: The fabrication of freestanding micro/nanoelements of single‐crystalline GaN and a simple process of printing them onto plastic substrates are…”
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Measurements of thermally induced nanometer-scale diffusiondepth of Pt ∕ Ti ∕ Pt ∕ Au gate metallization on InAlAs ∕ InGaAs high-electron-mobility transistors by Kim, Seiyon, Adesida, Ilesanmi, Hwang, Heedon

“…Platinum diffusion in InAlAs was investigated utilizing a Pt ∕ Ti ∕ Pt ∕ Au gate contact on an In 0.52 Al 0.48 As ∕ In 0.53 Ga 0.47 As ∕ InP…”
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Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors by Kim, Seiyon, Adesida, Ilesanmi, Hwang, Heedon

“…Platinum diffusion in InAlAs was investigated utilizing a Pt∕Ti∕Pt∕Au gate contact on an In0.52Al0.48As∕In0.53Ga0.47As∕InP high-electron-mobility transistor…”
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Effects of thin GaAs cap layer on optical properties of InAs/InGaAs/InP quantum dot by Kwangmin Park, Heedon Hwang, Haksun Lee, Yu Jin Jeon, Cheong, H.M., Euijoon Yoon

“…We have studied the influence of thin GaAs capping layer (5-10 monolayers) on optical properties of InAs QDs. After the growth of thin GaAs capping layer, the…”
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Optical properties of Si-doped InAs/InP quantum dots by Hwang, Heedon, Park, Kwangmin, Kang, Jong-Hoon, Yoon, Sukho, Yoon, Euijoon

“…InAs quantum dots (QDs) were grown on InP substrates by low pressure-metalorganic chemical vapor deposition. Disilane (Si 2H 6) was used as an n-type dopant…”
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Real time in situ monitoring of stacked InAs/InP quantum dots by spectral reflectance by Park, Kwangmin, Hwang, Heedon, Kang, Jong-Hoon, Yoon, Sukho, Kim, Yong Dong, Yoon, Euijoon

“…InAs/InP quantum dot (QD) stacks were grown by low-pressure metalorganic chemical vapor deposition and the entire growth procedure was monitored by real time…”
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On astigmatism of multi-beam optical stress sensor mounted at large incident angle by Jiang, Jinbo, Hwang, Heedon, Lee, Hak Sun, Kim, Byongju, Bong, Kee, Yoon, Euijoon

“…When multi-beam optical stress sensor (MOSS) system is mounted at a large incident angle ( α), despite an improvement of the resolution in the measurements, it…”
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Shape change of InAs self-assembled quantum dots induced by As/P exchange reaction by Yoon, Sukho, Moon, Youngboo, Lee, Tae-Wan, Hwang, Heedon, Yoon, Euijoon, Dong Kim, Young

“…Self-assembled InAs quantum dots (SAQDs) were grown on InP and on lattice-matched InGaAs buffer layers by metalorganic chemical vapor deposition (MOCVD). The…”
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In situ analysis of surface photoabsorption spectra during InP ALE in metal organic chemical vapor deposition by Kim, Young Dong, Lee, Min Soo, Lee, Tae-Wan, Hwang, Heedon, Yoon, Sukho, Moon, Youngboo, Yoon, Euijoon

“…In situ monitoring of InP atomic layer epitaxy (ALE) by surface photoabsorption (SPA) was performed in low-pressure metal organic chemical vapor deposition…”
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In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption by Heedon Hwang, Tae-Wan Lee, Youngboo Moon, Euijoon Yoon, Young Dong Kim

“…InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As…”
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