Search Results - "Hwan-Kuk Yuh"
-
1
Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes
Published in Applied physics letters (16-01-2012)“…We report the experimental determination of current spill-over in InGaN/GaN blue light emitting diodes by measuring the change in the forward current generated…”
Get full text
Journal Article -
2
Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes
Published in Applied physics letters (28-12-2009)“…Strong photovoltaic effects on photoluminescence (PL) spectra in InGaN/GaN blue light emitting diodes were investigated. Due to severe carrier escape from…”
Get full text
Journal Article -
3
Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells
Published in Physica status solidi. PSS-RRL. Rapid research letters (01-09-2010)“…We investigated the effects of a strain‐control layer on piezoelectric fields and indium incorporation in blue‐emitting InGaN/GaN quantum wells (QWs) using…”
Get full text
Journal Article -
4
Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination
Published in Applied physics letters (13-02-2012)“…We experimentally investigated well-to-well non-uniformity in InGaN/GaN multiple quantum well (MQW) structures by using capacitance-voltage measurements with…”
Get full text
Journal Article -
5
EFFECTS OF Pb/Pt TOP ELECTRODE ON HYDROGEN-INDUCED DEGRADATION IN Pb(Zr,Ti)O3
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 42-46. 2002 (01-01-2002)“…H-induced ferroelectric degradation of Pb(Zr,Ti)O3 (PZT) films was studied by measuring the hysteresis curves after H annealing at various temperatures and…”
Get full text
Journal Article -
6
Effects of prestrained layers on piezoelectric field and indium incorporation in InGaN/GaN quantum wells
Published in 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference (01-05-2009)“…We investigated the effects of prestrained layers on piezoelectric fields and indium incorporation in blue-emitting InGaN/GaN quantum wells by using…”
Get full text
Conference Proceeding -
7
A dual side electroluminescence measurement system for LED wafer manufacturing
Published in 2011 IEEE International Symposium on Assembly and Manufacturing (ISAM) (01-05-2011)“…The development of a system that evaluates the performances of an LED (light-emitting diode) wafer using a non-destructive test method after crystal growth and…”
Get full text
Conference Proceeding
-
8
Role of photovoltaic effects on characterizing emission propertiesof InGaN/GaN light emitting diodes
Published in Applied physics letters (30-12-2009)“…Strong photovoltaic effects on photoluminescence (PL) spectra in InGaN/GaN blue light emitting diodes were investigated. Due to severe carrier escape from…”
Get full text
Journal Article -
9
Low-temperature Si epitaxial growth on oxide patterned wafers by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-03-2001)“…Low-temperature electron cyclotron resonance hydrogen plasma cleaning was developed for low-temperature epitaxial growth of Si by ultrahigh vacuum electron…”
Get full text
Journal Article -
10
Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr,Ti)O 3
Published in Japanese Journal of Applied Physics (15-01-2002)Get full text
Journal Article