Search Results - "Huynh, Sharon"

Relative Validity of the Eat and Track (EaT) Smartphone App for Collection of Dietary Intake Data in 18-to-30-Year Olds by Wellard-Cole, Lyndal, Chen, Juliana, Davies, Alyse, Wong, Adele, Huynh, Sharon, Rangan, Anna, Allman-Farinelli, Margaret

“…(1) Background: Smartphone dietary assessment apps can be acceptable and valid data collection methods but have predominantly been validated in highly educated…”
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Treatment during a developmental window prevents NF1-associated optic pathway gliomas by targeting Erk-dependent migrating glial progenitors by Jecrois, Emmanuelle S., Zheng, Wang, Bornhorst, Miriam, Li, Yinghua, Treisman, Daniel M., Muguyo, Daphine, Huynh, Sharon, Andrew, Shayne F., Wang, Yuan, Jiang, Jingwen, Pierce, Brianna R., Mao, Hongmei, Krause, Matthew K., Friend, Austin, Nadal-Nicolas, Francisco, Stasheff, Steven F., Li, Wei, Zong, Hui, Packer, Roger J., Zhu, Yuan

“…The mechanism of vulnerability to pediatric low-grade gliomas (pLGGs)—the most common brain tumor in children—during development remains largely unknown. Using…”
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A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology by Cernea, R.-A., Long Pham, Moogat, F., Siu Chan, Binh Le, Yan Li, Shouchang Tsao, Tai-Yuan Tseng, Khanh Nguyen, Li, J., Jayson Hu, Jong Hak Yuh, Hsu, C., Fanglin Zhang, Kamei, T., Nasu, H., Kliza, P., Khin Htoo, Lutze, J., Yingda Dong, Higashitani, M., Junnhui Yang, Hung-Szu Lin, Sakhamuri, V., Li, A., Feng Pan, Yadala, S., Taigor, S., Pradhan, K., Lan, J., James Chan, Abe, T., Fukuda, Y., Mukai, H., Kawakami, K., Liang, C., Ip, T., Shu-Fen Chang, Lakshmipathi, J., Huynh, S., Pantelakis, D., Mofidi, M., Quader, K.

“…A 16 Gb 4-state MLC NAND flash memory augments the sustained program throughput to 34 MB/s by fully exercising all the available cells along a selected word…”
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A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate by Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jongmin Park, Samaddar, T., Hao Thai Nguyen, Mui, M.L., Htoo, K., Kamei, T., Higashitani, M., Yero, E., Gyuwan Kwon, Kliza, P., Jun Wan, Kaneko, T., Maejima, H., Shiga, H., Hamada, M., Fujita, N., Kanebako, K., Tam, E., Koh, A., Lu, I., Kuo, C.C.-H., Pham, T., Huynh, J., Qui Nguyen, Chibvongodze, H., Watanabe, M., Oowada, K., Shah, G., Woo, B., Gao, R., Chan, J., Lan, J., Hong, P., Liping Peng, Das, D., Ghosh, D., Kalluru, V., Kulkarni, S., Cernea, R.-A., Huynh, S., Pantelakis, D., Chi-Ming Wang, Quader, K.

“…A 16 Gb 8-level NAND flash chip on 56 nm CMOS technology has been fabricated and is being reported for the first time. This is the first 3-bit per cell (X3)…”
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128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode by Yan Li, Seungpil Lee, Oowada, K., Hao Nguyen, Qui Nguyen, Mokhlesi, N., Hsu, C., Li, J., Ramachandra, V., Kamei, T., Higashitani, M., Pham, T., Honma, M., Watanabe, Y., Ino, K., Binh Le, Byungki Woo, Khin Htoo, Tai-Yuan Tseng, Pham, L., Tsai, F., Kwang-ho Kim, Yi-Chieh Chen, Min She, Jong Yuh, Chu, A., Chen Chen, Puri, R., Hung-Szu Lin, Yi-Fang Chen, Mak, W., Huynh, J., Jim Chan, Watanabe, M., Yang, D., Shah, G., Souriraj, P., Tadepalli, D., Tenugu, S., Gao, R., Popuri, V., Azarbayjani, B., Madpur, R., Lan, J., Yero, E., Feng Pan, Hong, P., Jang Yong Kang, Moogat, F., Yupin Fong, Cernea, R., Huynh, S., Trinh, C., Mofidi, M., Shrivastava, R., Quader, K.

“…This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC)…”
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A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate by Li, Yan, Lee, Seungpil, Fong, Yupin, Pan, Feng, Kuo, Tien-Chien, Park, Jong, Samaddar, Tapan, Nguyen, Hao, Mui, Man, Htoo, Khin, Kamei, Teruhiko, Higashitani, Masaaki, Yero, Emilio, Kwon, Gyuwan, Kliza, Phil, Wan, Jun, Kaneko, Tetsuya, Maejima, Hiroshi, Shiga, Hitoshi, Hamada, Makoto, Fujita, Norihiro, Kanebako, Kazunori, Tam, Eugene, Koh, Anne, Lu, Iris, Kuo, Calvin, Pham, Trung, Huynh, Jonathan, Nguyen, Qui, Chibvongodze, Hardwell, Watanabe, Mitsuyuki, Oowada, Ken, Shah, Grishma, Woo, Byungki, Gao, Ray, Chan, James, Lan, James, Hong, Patrick, Peng, Liping, Das, Debi, Ghosh, Dhritiman, Kalluru, Vivek, Kulkarni, Sanjay, Cernea, Raul, Huynh, Sharon, Pantelakis, Dimitris, Wang, Chi-Ming, Quader, Khandker

“…We present an 8 MB/s 3-bit per cell (D3) NAND flash memory that uses the same number of ECC bytes as 2-bit per cell (D2) NAND. Since no extra columns are added…”
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A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm by Cernea, Raul, Pham, Long, Moogat, Farookh, Chan, Siu, Le, Binh, Li, Yan, Tsao, Shouchang, Tseng, Tai-Yuan, Nguyen, Khanh, Li, Jason, Hu, Jayson, Park, Jong, Hsu, Cynthia, Zhang, Fanglin, Kamei, Teruhiko, Nasu, Hiroaki, Kliza, Phil, Htoo, Khin, Lutze, Jeffrey, Dong, Yingda, Higashitani, Masaaki, Yang, Junhui, Lin, Hung-Szu, Sakhamuri, Vamshi, Li, Alan, Pan, Feng, Yadala, Sridhar, Taigor, Subodh, Pradhan, Kishan, Lan, James, Chan, James, Abe, Takumi, Fukuda, Yasuyuki, Mukai, Hideo, Kawakami, Koichi, Liang, Connie, Ip, Tommy, Chang, Shu-Fen, Lakshmipathi, Jaggi, Huynh, Sharon, Pantelakis, Dimitris, Mofidi, Mehrdad, Quader, Khandker

“…In the diverse world of NAND flash applications, higher storage capacity is not the only imperative. Increasingly, performance is a differentiating factor and…”
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