Modelling of the gate capacitance in gallium arsenide MESFETs
This thesis presents new expressions for direct extraction of MESFET equivalent circuit parameters from measured Y-parameters using a symmetrical equivalent circuit. These expressions were used to extract equivalent circuit elements from measurements on GaAs MESFETs fabricated with BNR's 0.8 $\...
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| Format: | Dissertation |
| Language: | English |
| Published: |
ProQuest Dissertations & Theses
01-01-1996
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| Online Access: | Get full text |
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| Summary: | This thesis presents new expressions for direct extraction of MESFET equivalent circuit parameters from measured Y-parameters using a symmetrical equivalent circuit. These expressions were used to extract equivalent circuit elements from measurements on GaAs MESFETs fabricated with BNR's 0.8 $\mu$m SAGFET process and with total gate widths ranging from 50 $\mu$m to 600 $\mu$m. Extracted values of the gate capacitances $C\sb{gs}$ and $C\sb{gd}$ as well as access resistors $r\sb{i}$ and $r\sb{gd}$ were used as basis for new empirical large-signal models of these equivalent circuit elements. The gate capacitance models are modular in nature, making them adaptable to devices fabricated with other processes. They provide better agreement with the measured data than other popular models. No empirical models of the access resistors have previously been published to our knowledge. When used in conjunction with a well-known drain-current model, the present models provide close agreement between measured and modelled S-parameters in all regions of operation. |
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| ISBN: | 9780612127463 061212746X |