Search Results - "Hurst, J.B."

Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates by Wang, S., Hurst, J.B., Ma, F., Sidhu, R., Sun, X., Zheng, X.G., Holmes, A.L., Huntington, A., Coldren, L.A., Campbell, J.C.

“…We report low noise multiplication region structures designed for avalanche photodiodes grown on InP substrates. By either implementing a single…”
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A study of low-bias photocurrent gradient of avalanche photodiodes by Shuling Wang, Sidhu, R., Karve, G., Feng Ma, Xiaowei Li, Xiao Guang Zheng, Hurst, J.B., Xiaoguang Sun, Ning Li, Holmes, A.L., Campbell, J.C.

“…Presents a study of the photo-response of avalanche photodiodes (APDs) under low reverse bias at unity gain. Some wafers exhibit a linear increase of…”
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Fracture mechanisms for SiC fibers and SiC/SiC composites under stress-rupture conditions at high temperatures by DiCarlo, J.A., Yun, H.M., Hurst, J.B.

“…The successful application of SiC/SiC ceramic matrix composites as high-temperature structural materials depends strongly on maximizing the fracture or rupture…”
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Long-wavelength In0.53Ga0.47As-In0.52Al0.48As large-area avalanche photodiodes and arrays by ZHENG, X. G, HSU, J. S, HURST, J. B, LI, X, WANG, S, SUN, X, HOLMES, Archie L, CAMPBELL, Joe C, HUNTINGTON, Andrew S, COLDREN, Larry A

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Long-wavelength In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As large-area avalanche photodiodes and arrays by Zheng, X.G., Hsu, J.S., Hurst, J.B., Li, X., Wang, S., Sun, X., Holmes, A.L., Campbell, J.C., Huntington, A.S., Coldren, L.A.

“…Large-area (500-/spl mu/m diameter) mesa-structure In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APDs) are reported. The dark…”
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A 12 × 12 In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode array by Zheng, X.G, Hsu, J.S, Sun, X, Hurst, J.B, Li, X, Wang, S, Holmes, A.L.Jr, Campbell, J.C, Huntington, A.S, Coldren, L.A

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A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array by Zheng, X.G., Hsu, J.S., Sun, X., Hurst, J.B., Li, X., Wang, S., Holmes, A.L.Jr, Campbell, J.C., Huntington, A.S., Coldren, L.A.

“…We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was…”
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A 12 × 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array by Zheng, X.G., Hsu, J.S., Sun, X., Hurst, J.B., Li, X., Wang, S., Holmes, A.L.Jr, Campbell, J.C., Huntington, A.S., Coldren, L.A.

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Use of glovebags for less hazardous working conditions during the maintenance operations on molecular-beam epitaxy systems by Oye, Michael M., Ahn, J., Cao, C., Chen, H., Fordyce, W., Gazula, D., Govindaraju, S., Hurst, J. B., Lipson, S., Lu, D., Reifsnider, J. M., Shchekin, O., Sidhu, R., Sun, X., Deppe, D. G., Holmes, A. L., Mattord, Terry J.

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Recent developments in avalanche photodiodes by Campbell, J.C., Shuling Wang, Xiaoguang Zheng, Xioawei Li, Ning Li, Feng Ma, Xiaoguang Sun, Hurst, J.B., Sidhu, R., Holmes, A.L., Huntington, A., Coldren, L.A.

“…This paper surveys recent work in several photodetector areas including high-speed, low-noise avalanche photodiodes, solar-blind ultra-violet PIN photodiodes,…”
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Low-noise InP-based avalanche photodiodes with an impact-ionization-engineered multiplication region by Wang, S., Hurst, J.B., Ma, F., Sidhu, R., Sun, X., Zheng, X.G., Holmes, A.L., Campbell, J.C., Huntington, A., Coldren, L.A.

“…We report the direct growth of impact-ionization engineering (I/sub 2/E) structures using InAlAs and InAlGaAs quaternary in the multiplication regions…”
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