Search Results - "Hurle, D.T.J"

A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors by Hurle, D.T.J., Rudolph, P.

“…A historical review of the development of knowledge of defect formation in semiconductor crystals is given. The treatment starts with zero-dimensional defect…”
Get full text

A mechanism for twin formation during Czochralski and encapsulated vertical Bridgman growth of III–V compound semiconductors by Hurle, D.T.J.

“…Conditions are derived for which nucleation in twin orientation on an “edge” facet during the Czochralski growth of semiconductors is thermodynamically…”
Get full text

The mechanism of growth-twin formation in zincblende crystals: new insights from a study of magnetic liquid encapsulated Czochralski-grown InP single crystals by Chung, H, Dudley, M, Larson, D.J, Hurle, D.T.J, Bliss, D.F, Prasad, V

“…Synchrotron white beam X-ray topography (SWBXT) [1, 2][M. Dudley, in: Mater Res. Soc. Symp. Proc., vol. 307, 1993, p. 213; Encyclopedia of Applied Physics,…”
Get full text

The influence of polarity on twinning in zincblende structure crystals: new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals by Dudley, M., Raghothamachar, B., Guo, Y., Huang, X.R., Chung, H., Hurle, D.T.J., Bliss, D.F.

“…The polarity of {1 1 1} edge facets, anchored to the three-phase boundary (TPB), which give rise to growth-twin nucleation in the shoulder region of a [0 0 1],…”
Get full text

Comments on “Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods by M. Neubert, A. Kwasniewski and R. Fornari” J. Crystal Growth 310 (2008) 5270 by Hurle, D.T.J., Dudley, M.

“…The authors found no correlation between crystal growth angle and twinning incidence. This is contrary to the predictions of the Hurle model [1]. A possible…”
Get full text

Charged native point defects in GaAs and other III–V compounds by Hurle, D.T.J.

“…The solubility of both native point defects and dopants in semiconductors is dependent on growth temperature, on crystal stoichiometry and on Fermi level…”
Get full text

The origins of the International Crystal Growth Conferences, the International Organisation for Crystal Growth and the Journal of Crystal Growth by Hurle, D.T.J

Get full text

Properties of Gallium Arsenide—second edition by Hurle, D.T.J.

Get full text

Growth-twinning in zincblende crystals: further insights from studies of liquid encapsulated Czochralski (LEC) grown InP single crystals by Chung, H., Dudley, M., Larson, D.J., Prasad, V., Hurle, D.T.J., Bliss, D.F.

“…Synchrotron white beam X-ray topography (SWBXT) combined with chemical etching and Nomarski optical microscopy have been employed to investigate the phenomenon…”
Get full text