Search Results - "Hunsperger, R.G."

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  1. 1

    CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode by Martin, R.D., Forouhar, S., Keo, S., Lang, R.J., Hunsperger, R.G., Tiberio, R.C., Chapman, P.F.

    Published in IEEE photonics technology letters (01-03-1995)
    “…Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate…”
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    Journal Article
  2. 2

    Channel optical waveguide directional couplers by Somekh, S., Garmire, E., Yariv, A., Garvin, H.L., Hunsperger, R.G.

    Published in Applied physics letters (01-01-1973)
    “…We report the first demonstration of channel optical waveguide directional couplers. The closely spaced channel waveguides were fabricated in GaAs by proton…”
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    Journal Article
  3. 3

    Optical waveguiding in proton-implanted GaAs by Garmire, E., Stoll, H., Yariv, A., Hunsperger, R.G.

    Published in Applied physics letters (01-01-1972)
    “…We have produced optical waveguides in n-type GaAs by implantation with 300-keV protons. The guiding is shown to be due to the elimination of charge carriers…”
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    Journal Article
  4. 4

    Piezoelectric and acoustic properties of potassium titanyl phosphate (KTP) and its isomorphs by Chu, D.K.T., Bierlein, J.D., Hunsperger, R.G.

    “…The bulk elastic and piezoelectric properties of potassium titanyl phosphate (KTP) and some of its family members such as RbTiOPO/sub 4/ (RTP) and RbTiOAsO/sub…”
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    Journal Article
  5. 5

    Piezoelectric, elastic, and ferroelectric properties of KTiOPO/sub 4/ and its isomorphs by Chu, D.K.T., Bierlein, J.D., Hunsperger, R.G.

    “…Potassium titanyl phosphate (KTiOPO/sub 4/, KTP) has been shown to possess some promising bulk properties, such as relatively large electromechanical coupling…”
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    Conference Proceeding
  6. 6

    Fabrication of monolithically Peltier-cooled linear laser diodes using wet chemical etching by Hava, S., Hunsperger, R.G.

    Published in IEEE transactions on electron devices (01-01-1985)
    “…The basic structure of a monolithically Peltier-cooled laser (MPCL) diode has been fabricated. The process of forming the structure involves critical masking…”
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    Journal Article
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    Monolithically Peltier-cooled laser diodes by Hava, S., Hunsperger, R., Sequeira, H.

    Published in Journal of lightwave technology (01-04-1984)
    “…A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and…”
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    Journal Article
  9. 9

    Effects of contact resistance and dopant concentration in metal-Semiconductor thermoelectric coolers by Cortes, C.M., Hunsperger, R.G.

    Published in IEEE transactions on electron devices (01-03-1980)
    “…The maximum heat that can be pumped by a metal-semiconductor thermoelectric cooling stage depends strongly on the dopant concentration in the semiconductor and…”
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    Liquid phase epitaxial InGaAs on InP with rare-earth elements by Wei Gao, Berger, P.R., Hunsperger, R.G., Pamulapati, J.

    “…High quality In/sub 0.53/Ga/sub 0.47/As has been grown on semi-insulating (100) InP:Fe substrates. The growths were performed with rare-earth (Er, Gd, and Yb)…”
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    Conference Proceeding
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