Highly manufacturable 90 nm NOR flash technology with 0.081 /spl mu/m/sup 2/ cell size

A manufacturable 90 nm NOR Flash technology has been developed with extremely small cell size of 0.081/spl mu/m/sup 2/, which is the smallest cell size of NOR cell, for high density code storage memory featuring with low voltage operation. The small cell size of 0.081/spl mu/m/sup 2/ is successfully...

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Bibliographic Details

Published in:	2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) pp. 91 - 92
Main Authors:	Yunheub Song, Sangeun Lee, Taeyong Kim, Jungin Han, Hungyu Lee, Sunyoung Kim, Junghwan Park, Sewoong Park, Joonhuk Choi, Jaewoo Kim, Daeyup Lee, Myoungkwan Cho, Kyucharn Park, Kinam Kim
Format:	Conference Proceeding
Language:	English
Published:	IEEE 2003
Subjects:	Appropriate technology Dielectric thin films Doping Lighting Lithography Low voltage Manufacturing Nonvolatile memory Oxidation Synthetic aperture sonar
Online Access:	Get full text
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