Search Results - "Hung, B.F."

HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…The authors have fabricated low-temperature fully silicided YbSi/sub 2-x/-gated n-MOSFETs that used an HfAlON gate dielectric with a 1.7-nm EOT. After a 600…”
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Low noise RF MOSFETs on flexible plastic substrates by Kao, H.L., Chin, A., Hung, B.F., Lee, C.F., Lai, J.M., McAlister, S.P., Samudra, G.S., Won Jong Yoo, Chi, C.C.

“…We report a low minimum noise figure (NF min ) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down…”
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High-performance poly-silicon TFTs incorporating LaAlO/sub 3/ as the gate dielectric by Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P.

“…We have integrated a high-/spl kappa/ LaAlO/sub 3/ dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was…”
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Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer by Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C.

“…A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF)…”
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The corrective criteria to avoid adjacent segment degeneration following surgical correction for lumbar spondylolisthesis by Kim, S.M., Kim, Y.C., Ha, K.Y., Li, X., Hung, B.F., Park, J.

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Decision of pedicle subtraction osteotomy vertebra in surgical correction for ankylosing spondylitis with thoracolumbar kyphosis by Kim, S.M., Kim, Y.C., Ha, K.Y., Li, X., Hung, B.F., Park, J.

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Surgical strategy-oriented classification for the patients with severe dynamic sagittal imbalance by Kim, S.M., Kim, Y.C., Ha, K.Y., Li, X., Hung, B.F., Park, J.

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High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric by HUNG, B. F, CHIANG, K. C, HUANG, C. C, CHIN, Albert, MCALISTER, S. P

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HfSiON n-MOSFETs Using Low-Work Function hboxHfSixGate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…The authors have developed a novel high-temperature stable HfSi x gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi x /HfSiON devices…”
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HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

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High work function Ir/sub x/Si gates on HfAlON p-MOSFETs by Wu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P.

“…We have fabricated the fully silicided Ir/sub x/Si-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950/spl deg/C rapid…”
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High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate by WU, C. H, HUNG, B. F, TAO, H. J, CHEN, S. C, LIANG, M. S, CHIN, Albert, WANG, S. J, WANG, X. P, LI, M.-F, ZHU, C, YEN, F. Y, HOU, Y. T, JIN, Y

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High work function IrxSi gates on HfAlON p-MOSFETs by WU, C. H, YU, D. S, CHIN, Albert, WANG, S. J, LI, M.-F, ZHU, C, HUNG, B. F, MCALISTER, S. P

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A novel program-erasable high-[kappa] AlN-Si MIS capacitor by Lai, C.H, Chin, A, Hung, B.F, Cheng, C.F, Yoo, Won Jong, Li, M.F, Zhu, Chunxiang, McAlister, S.P, Kwong, Dim-Lee

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HfSiON n-MOSFETs Using Low-Work Function Gate by Wu, C.H, Hung, B.F, Chin, A, Wang, S.J, Yen, F.Y, Hou, Y.T, Jin, Y, Tao, H.J, Chen, S.C, Liang, M.S

“…The authors have developed a novel high-temperature stable HfSi sub(x) gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi…”
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High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function \hbox\hbox Gate by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Wang, X.P., Li, M.-F., Zhu, C., Yen, F.Y., Hou, Y.T., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…We report a novel 1000 degC stable HfLaON p-MOSFET with Ir 3 Si gate. Low leakage current of 1.8times10 -5 A/cm 2 at 1 V above flat-band voltage, good…”
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Strain-induced very low noise RF MOSFETs on flexible plastic substrate by Kao, H.L., Chin, A., Hung, B.F., Lai, J.M., Lee, C.F., Li, M.-F., Samudra, G.S., Zhu, C., Xia, Z.L., Liu, X.Y., Kang, J.F.

“…Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NF/sub min/) and high 12 dB associate gain…”
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Low workfunction fully silicided gate on SiO/sub 2//Si and LaAlO/sub 3//GOI n-MOSFETs by Yu, D.S., Chin, A., Hung, B.F., Chen, W.J., Zhu, C.X., Li, M.-F., Zhu, S.Y., Kwong, D.L.

“…The main challenges for metal-gate/high-k CMOS are to find dual workfunction gates and robust high-k dielectrics. The low workfunction metal-gate for n-MOS is…”
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A novel program-erasable high-/spl kappa/ AlN-Si MIS capacitor by Lai, C.H., Chin, A., Hung, B.F., Cheng, C.F., Won Jong Yoo, Li, M.F., Chunxiang Zhu, McAlister, S.P., Dim-Lee Kwong

“…We demonstrate a programmable-erasable MIS capacitor with a single layer high-/spl kappa/ AlN dielectric on Si having a high capacitance density of /spl sim/5…”
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High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference by Wu, C.H., Hung, B.F., Chin, A., Wang, S.J., Chen, W.J., Wang, X.P., Li, M.-F., Zhu, C., Jin, Y., Tao, H.J., Chen, S.C., Liang, M.S.

“…The authors report novel 1000degC-stable [Ir 3 Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to…”
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