Search Results - "Humphrey, A D"

Subpicosecond InP/InGaAs heterostructure bipolar transistors by Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.

“…Bipolar transistors with subpicosecond extrinsic delay are discussed. These InP/InGaAs heterostructure transistors show a unity-current-gain cutoff frequency…”
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Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxy by JALALI, B, NOTTENBURG, R. N, CHEN, Y. K, LEVI, A. F. J, SIVCO, D, CHO, A. Y, HUMPHREY, D. A

“…We demonstrate near-ideal lateral scaling in abrupt junction Al0.48In0.52As /In0.53Ga0.47As heterostructure bipolar transistors. Current gain β=162 and 122 has…”
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Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy by HAMM, R. A, PANISH, M. B, NOTTENBURG, R. N, CHEN, Y. K, HUMPHREY, D. A

“…Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be to p=5×1020 cm−3 by growth at substrate temperatures as low as 365 °C…”
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Microwave noise performance of InP/InGaAs heterostructure bipolar transistors by Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.

“…The authors report the first low-noise InP/InGaAs heterostructure bipolar transistor (HBT). Minimum noise figures of 0.46, 2.0, and 3.33 dB were measured at 2,…”
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Hot-electron InGaAs/InP heterostructure bipolar transistors with fT of 110 GHz by NOTTENBURG, R. N, CHEN, Y. K, PANISH, M. B, HUMPHREY, D. A, HAMM, R

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Blue stark shift in modulation strained InGaAs/InP quantum wells by GERSHONI, D, HAMM, R. A, PANISH, M. B, HUMPHREY, D. A

“…We show that by a proper design and modulation of the composition of a ternary InGaAs quantum well one can considerably alter the optical properties of the…”
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Influence of base thickness on collector breakdown in abrupt AlInAs/InGaAs heterostructure bipolar transistors by Jalali, B., Chen, Y.-K., Nottenburg, R.N., Sivco, D., Humphrey, D.A., Cho, A.Y.

“…The avalanche process in the collector of abrupt Al/sub 0.48/In/sub 0.52/As-In/sub 0.53/Ga/sub 0.47/As heterostructure bipolar transistors (HBTs) is reported…”
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High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy by NOTTENBURG, R. N, CHEN, Y. K, TANBUN-EK, T, LOGAN, R. A, HUMPHREY, D. A

“…We demonstrate high performance InGaAs/InP heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy. A unity current gain cutoff frequency…”
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GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption by GUNAPALA, S. D, LEVINE, B. F, LOGAN, R. A, TANBUN-EK, T, HUMPHREY, D. A

“…We demonstrate an 8 μm superlattice infrared detector which utilizes bound-to-continuum state intersubband absorption in lattice-matched GaAs/Ga0.5In0.5P…”
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Violent behaviors in early adolescent minority youth: results from a "middle school youth risk behavior survey" by Clubb, P A, Browne, D C, Humphrey, A D, Schoenbach, V, Meyer, B, Jackson, M

“…To describe the prevalence and characteristics of violence and violence-related behaviors among six populations of U.S. minority adolescents in grades 6-8. Six…”
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High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors by Nottenburg, R.N., Chen, Y.-K., Panish, M.B., Hamm, R., Humphrey, D.A.

“…Common-emitter current gains of 115 and 170 are achieved in transistors with emitter dimensions as small as 0.3*3 and 0.8*3 mu m/sup 2/, respectively. These…”
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Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S•9H2O regrowth by NOTTENBURG, R. N, SANDROFF, C. J, HUMPHREY, D. A, HOLLENBECK, T. H, BHAT, R

“…The deposition of sodium sulfide nonahydrate (Na2S⋅9H2O) onto mesa AlGaAs/GaAs heterostructure bipolar transistors confers near-ideal transport characteristics…”
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8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth by Berger, P.R., Dutta, N.K., Humphrey, D.A., Smith, P.R., Wang, S.-J., Montgomery, R.K., Sivco, D., Cho, A.Y.

“…An 8-element linear array of single-stage integrating front-end photoreceivers using molecular beam epitaxial (MBE) regrowth was investigated. Each element…”
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Planar diode solid-state receiver for 557 GHz with state-of-the-art performance by Oswald, J.E., Koch, T., Mehdi, I., Pease, A., Dengler, R.J., Lee, T.H., Humphrey, D.A., Kim, M., Siegel, P.H., Frerking, M.A., Erickson, N.R.

“…The design and performance of a subharmonically pumped (SHP) 557-GHz mixer driven by a solid-state local oscillator (LO) are reported. Whisker contacts are not…”
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The role of state maternal and child health programs in the issue of newborn discharge by Margolis, L H, Gay, K, Humphrey, A D

“…Since dramatically shortened newborn hospitalization has shifted the focus of care from the hospital, a central policy question has become how to assure a…”
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Carbon doping of InGaAs in solid‐source molecular beam epitaxy using carbon tetrabromide by Hwang, Wen‐Yen, Miller, D. L., Chen, Y. K., Humphrey, D. A.

“…Carbon tetrabromide was used to dope (In,Ga)As layers lattice matched to InP grown by solid‐source molecular beam epitaxy. The maximum hole density depended on…”
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Improved 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne applications by Mehdi, I., Marazita, S.M., Humphrey, D.A., Trong-Huang Lee, Dengler, R.J., Oswald, J.E., Pease, A.J., Martin, S.C., Bishop, W.L., Crowe, T.W., Siegel, P.H.

“…Low-noise broad intermediate frequency (IF) band 240-GHz subharmonically pumped planar Schottky diode mixers for space-borne radiometers have been developed…”
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Ka-band monolithic InGaAs/InP HBT VCO's in CPW structure by Lin, J., Chen, Y.K., Humphrey, D.A., Hamm, R.A., Malik, R.J., Tate, A., Kopf, R.F., Ryan, R.W.

“…Two Ka-band monolithic voltage controlled oscillators (VCO's) designed in a coplanar waveguide (CPW) structure are described. Each VCO utilizes an InGaAs/InP…”
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Nonequilibrium electron transport in heterostructure bipolar transistors probed by magnetic field by Nottenburg, R. N., Levi, A. F. J., Jalali, B., Sivco, D., Humphrey, D. A., Cho, A. Y.

“…We show that the static current-voltage characteristics of a heterojunction bipolar transistor are dramatically influenced by application of a magnetic field…”
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High-frequency submicrometer Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors by JALALI, B, NOTTENBURG, R. N, CHEN, Y.-K, SIVCO, D, HUMPHREY, D. A, CHO, A. Y

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