Search Results - "Hummler, Klaus"

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  1. 1

    A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability by Okoro, Chukwudi, Lau, June W., Golshany, Fardad, Hummler, Klaus, Obeng, Yaw S.

    Published in IEEE transactions on electron devices (01-01-2014)
    “…In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy…”
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    Journal Article
  2. 2

    Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray Diffraction by Okoro, Chukwudi, Levine, Lyle E., Ruqing Xu, Hummler, Klaus, Obeng, Yaw S.

    Published in IEEE transactions on electron devices (01-07-2014)
    “…In this paper, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using a…”
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    Journal Article
  3. 3

    Accelerated Stress Test Assessment of Through-Silicon Via Using RF Signals by Okoro, C., Kabos, P., Obrzut, J., Hummler, K., Obeng, Y. S.

    Published in IEEE transactions on electron devices (01-06-2013)
    “…In this paper, radio frequency signal is demonstrated as an effective probe for assessing the effect of thermal cycling on the reliability of through-silicon…”
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    Journal Article
  4. 4

    Challenges in thin wafer handling and processing by Olson, Stephen, Hummler, Klaus, Sapp, Brian

    “…Through-silicon via (TSV)-based 3D packaging technologies require processing and handling of silicon wafers thinned to 50 μm and below. A number of…”
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    Conference Proceeding
  5. 5

    On the technology and ecosystem of 3D / TSV manufacturing by Hummler, K., Smith, L., Caramto, R., Edgeworth, R., Olson, S., Pascual, D., Qureshi, J., Rudack, A., Quon, R., Arkalgud, S.

    “…Three-dimensional (3D) die stacking using through silicon via (TSV) promises significant improvements in performance, power consumption and size over…”
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    Conference Proceeding
  6. 6

    Backside TSV protrusion induced by thermal shock and thermal cycling by Dingyou Zhang, Hummler, Klaus, Smith, Larry, Lu, James Jian-Qiang

    “…This paper reports on thermal-mechanical failures of through-silicon-vias (TSVs), in particular, for the first time, the protrusions at the TSV backside, which…”
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    Conference Proceeding
  7. 7

    TSV reveal etch for 3D integration by Olson, S., Hummler, K.

    “…In via-first and via-mid TSV integration flows, Si must be removed from the backside of the wafer to make contact with the bottom of the TSVs. This operation…”
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    Conference Proceeding
  8. 8

    Direct Cu plating of high aspect ratio through silicon vias (TSVs) with Ru seed on 300 mm wafer by Wafula, Fred, Pattanaik, Gyanaranjan, Enloe, Jack, Hummler, Klaus, Sapp, Brian

    “…In this paper, physical and electrical results of full wafer direct Cu plating of 2×40 μm TSVs with thin Ru seed are presented. Physical vapor deposition of…”
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    Conference Proceeding
  9. 9

    X-ray micro-beam diffraction measurement of the effect of thermal cycling on stress in Cu TSV: A comparative study by Okoro, Chukwudi, Levine, Lyle E., Ruqing Xu, Hummler, Klaus, Obeng, Yaw

    “…Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this…”
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    Conference Proceeding
  10. 10

    Use of RF-based technique as a metrology tool for TSV reliability analysis by Okoro, Chukwudi, Kabos, Pavel, Obrzut, Jan, Hummler, Klaus, Obeng, Yaw S.

    “…In this work, radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the…”
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    Conference Proceeding
  11. 11

    X-ray micro-beam diffraction determination of full stress tensors in Cu TSVs by Okoro, Chukwudi, Levine, Lyle E., Ruqing Xu, Tischler, Jonathan Z., Wenjun Liu, Kirillov, Oleg, Hummler, Klaus, Obeng, Yaw S.

    “…We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based…”
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    Conference Proceeding
  12. 12

    Thermo-mechanical simulations of a copper-to-copper direct bonded 3D TSV chip package interaction test vehicle by Ah-Young Park, Ferrone, Daniel, Cain, Stephen, Dae Young Jung, Murray, Bruce T., Seungbae Park, Hummler, Klaus

    “…Through-silicon via (TSV) technology has the potential to overcome existing limitations of miniaturization and to increase the performance of electronic…”
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    Conference Proceeding
  13. 13

    Temperature-dependent thermal stress determination for through-silicon-vias (TSVs) by combining bending beam technique with finite element analysis by Lu, K. H., Suk-Kyu Ryu, Qiu Zhao, Hummler, K., Im, J., Rui Huang, Ho, P. S.

    “…In this paper, temperature-dependent thermal stresses in Cu TSVs are measured by combining the bending beam experiment with a finite element analysis (FEA)…”
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    Conference Proceeding
  14. 14

    Development of Visual Extension Material for a Striga Control Programme in Northern Ghana through Action Research by Feil, Petra

    “…A learner-centered extension approach was used to develop visual materials to teach Ghanian farmers about weed control. The method was inexpensive, easy to…”
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    Journal Article
  15. 15

    Probeless voltage contrast using a focused ion beam for opens and shorts defect isolation of ultralarge scale integration technologies by Giewont, Kenneth J., Hunt, Douglas B., Hummler, Klaus M.

    “…Defect isolation in large yield mazes for accurate and timely physical analysis continues to be a critical part of process development for 0.4 and 0.25 μm…”
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    Journal Article