Search Results - "Hummler, Klaus"
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1
A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability
Published in IEEE transactions on electron devices (01-01-2014)“…In this paper, the reliability of through-silicon via (TSV) daisy chains under thermal cycling conditions was examined. The electrical resistance of TSV daisy…”
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2
Nondestructive Measurement of the Residual Stresses in Copper Through-Silicon Vias Using Synchrotron-Based Microbeam X-Ray Diffraction
Published in IEEE transactions on electron devices (01-07-2014)“…In this paper, we report a new method for achieving depth resolved determination of the full stress tensor in buried Cu through-silicon vias (TSVs), using a…”
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3
Accelerated Stress Test Assessment of Through-Silicon Via Using RF Signals
Published in IEEE transactions on electron devices (01-06-2013)“…In this paper, radio frequency signal is demonstrated as an effective probe for assessing the effect of thermal cycling on the reliability of through-silicon…”
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4
Challenges in thin wafer handling and processing
Published in ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference (01-05-2013)“…Through-silicon via (TSV)-based 3D packaging technologies require processing and handling of silicon wafers thinned to 50 μm and below. A number of…”
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Conference Proceeding -
5
On the technology and ecosystem of 3D / TSV manufacturing
Published in 2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (01-05-2011)“…Three-dimensional (3D) die stacking using through silicon via (TSV) promises significant improvements in performance, power consumption and size over…”
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Conference Proceeding -
6
Backside TSV protrusion induced by thermal shock and thermal cycling
Published in 2013 IEEE 63rd Electronic Components and Technology Conference (01-05-2013)“…This paper reports on thermal-mechanical failures of through-silicon-vias (TSVs), in particular, for the first time, the protrusions at the TSV backside, which…”
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Conference Proceeding -
7
TSV reveal etch for 3D integration
Published in 2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International (01-01-2012)“…In via-first and via-mid TSV integration flows, Si must be removed from the backside of the wafer to make contact with the bottom of the TSVs. This operation…”
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Conference Proceeding -
8
Direct Cu plating of high aspect ratio through silicon vias (TSVs) with Ru seed on 300 mm wafer
Published in IEEE International Interconnect Technology Conference (01-05-2014)“…In this paper, physical and electrical results of full wafer direct Cu plating of 2×40 μm TSVs with thin Ru seed are presented. Physical vapor deposition of…”
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Conference Proceeding -
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X-ray micro-beam diffraction measurement of the effect of thermal cycling on stress in Cu TSV: A comparative study
Published in 2014 IEEE 64th Electronic Components and Technology Conference (ECTC) (01-05-2014)“…Microelectronic devices are subjected to constantly varying temperature conditions during their operational lifetime, which can lead to their failure. In this…”
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Conference Proceeding -
10
Use of RF-based technique as a metrology tool for TSV reliability analysis
Published in 2013 IEEE 63rd Electronic Components and Technology Conference (01-05-2013)“…In this work, radio frequency (RF) based measurement technique is used as a prognostic tool for the assessment of the effect of thermal cycling on the…”
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Conference Proceeding -
11
X-ray micro-beam diffraction determination of full stress tensors in Cu TSVs
Published in 2013 IEEE 63rd Electronic Components and Technology Conference (01-05-2013)“…We report the first non-destructive, depth resolved determination of the full stress tensor in Cu through-silicon vias (TSVs), using synchrotron based…”
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Conference Proceeding -
12
Thermo-mechanical simulations of a copper-to-copper direct bonded 3D TSV chip package interaction test vehicle
Published in 2013 IEEE 63rd Electronic Components and Technology Conference (01-05-2013)“…Through-silicon via (TSV) technology has the potential to overcome existing limitations of miniaturization and to increase the performance of electronic…”
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Conference Proceeding -
13
Temperature-dependent thermal stress determination for through-silicon-vias (TSVs) by combining bending beam technique with finite element analysis
Published in 2011 IEEE 61st Electronic Components and Technology Conference (ECTC) (01-05-2011)“…In this paper, temperature-dependent thermal stresses in Cu TSVs are measured by combining the bending beam experiment with a finite element analysis (FEA)…”
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Conference Proceeding -
14
Development of Visual Extension Material for a Striga Control Programme in Northern Ghana through Action Research
Published in European journal of agricultural education and extension (01-06-1997)“…A learner-centered extension approach was used to develop visual materials to teach Ghanian farmers about weed control. The method was inexpensive, easy to…”
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Journal Article -
15
Probeless voltage contrast using a focused ion beam for opens and shorts defect isolation of ultralarge scale integration technologies
Published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures (01-07-1997)“…Defect isolation in large yield mazes for accurate and timely physical analysis continues to be a critical part of process development for 0.4 and 0.25 μm…”
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