Search Results - "Hulyer, P. J."

Determination of single-pass optical gain and internal loss using a multisection device by Thomson, J. D., Summers, H. D., Hulyer, P. J., Smowton, P. M., Blood, P.

“…We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a…”
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Spectral analysis of InGaAs/GaAs quantum-dot lasers by Smowton, P. M., Johnston, E. J., Dewar, S. V., Hulyer, P. J., Summers, H. D., Patanè, A., Polimeni, A., Henini, M.

“…The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices…”
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Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy by WOODBRIDGE, K, BLOOD, P, FLETCHER, E. D, HULYER, P. J

“…GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 Å have been grown by molecular beam epitaxy and operated at room…”
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Emission wavelength of AlGaAs-GaAs multiple quantum well lasers by BLOOD, P, FLETCHER, E. D, HULYER, P. J, SMOWTON, P. M

“…We have recorded spontaneous emission spectra from multiple quantum well lasers grown by molecular beam epitaxy with 25-Å-wide GaAs wells by opening a window…”
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A New Explanation of Domain Wall Creep in Thin Magnetic Films by BEEFORTH, T. H, HULYER, P. J

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Growth and device characteristics of short wavelength GaAs multiple quantum well lasers by Woodbridge, K., Blood, P., Fletcher, E. D., Hulyer, P. J.

“…There is widespread interest in the use of the quantum size effect to modify the operating wavelength of semiconductor lasers, particularly in the AlGaAs/GaAs…”
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