Search Results - "Hult, Bjorn"

High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a "Buffer-Free" Heterostructure by Hult, Bjorn, Thorsell, Mattias, Chen, Jr-Tai, Rorsman, Niklas

“…The performance of a novel 'buffer-free' AlGaN/GaN-on-SiC MISHEMTs for power switching applications is demonstrated in this letter. High voltage operation with…”
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Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique by Hult, Bjorn, Bergsten, Johan, Castillo, Ragnar Ferrand-Drake Del, Darakchieva, Vanya, Malmros, Anna, Hjelmgren, Hans, Thorsell, Mattias, Rorsman, Niklas

“…Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron…”
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Investigation of Isolation Approaches and the Stoichiometry of SiNx Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors by Hult, Björn, Thorsell, Mattias, Jr-Tai, Chen, Rorsman, Niklas

“…Critical process modules for the fabrication of metal–insulator–semiconductor high‐electron‐mobility transistors (MISHEMTs) based on a novel ‘buffer‐free’…”
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Investigation of Isolation Approaches and the Stoichiometry of SiN x Passivation Layers in “Buffer‐Free” AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors by Hult, Björn, Thorsell, Mattias, Chen, Jr-Tai, Rorsman, Niklas

“…Critical process modules for the fabrication of metal–insulator–semiconductor high‐electron‐mobility transistors (MISHEMTs) based on a novel ‘buffer‐free’…”
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Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications by Hult, Björn

“…The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN,…”
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AlGaN/GaN/AlN 'Buffer-Free' High Voltage MISHEMTs with Si-rich and Stoichiometric SiNx First Passivation by Hult, Bjorn, Thorsell, Mattias, Chen, Jr-Tai, Rorsman, Niklas

“…'Buffer-free' AlGaN/GaN/AlN high electron mobility transistors (HEMTs) with a thin GaN channel layer and a thin AlN nucleation layer grown on a semi-insulating…”
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Mg-doping and free-hole properties of hot-wall MOCVD GaN by Papamichail, Alexis, Kakanakova, Anelia, Sveinbjörnsson, Einar O, Persson, Axel R, Hult, Björn, Rorsman, Niklas, Stanishev, Vallery, Le, Son Phuong, Persson, Per O. Å, Nawaz, Muhammad, Chen, Jr-Tai, Paskov, Plamen P, Darakchieva, Vanya

“…The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices,…”
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