4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges

Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has be...

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Bibliographic Details
Published in:	68th Device Research Conference pp. 197 - 200
Main Authors:	Hulla, B, Jon Zhang, Das, M, Sei-Hyung Ryu, Jonas, C, Dhar, S, Haney, S, Callanan, R, Richmond, J
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2010
Subjects:	Leakage current Logic gates Resistance Silicon Silicon carbide Switches Temperature
Online Access:	Get full text
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Summary:	Power devices fabricated in 4H-SiC are poised to significantly impact the field of power electronics. There has been great interest in SiC as a material in which to fabricate power electronic devices for quite some time based on its very promising fundamental materials properties. However, it has been far more recently that the potential of SiC is being appreciated as a result of the recent advances in material quality, fabrication processes and device design. Based on the high critical breakdown electric field, high bandgap and high thermal conductivity of SiC, systems that are specifically designed to take advantage of these characteristics offer superior power density, lower cooling requirements, and prolonged survivability in adverse conditions when compared to systems fabricated with Si power devices.
ISBN:	1424465621 9781424465620
ISSN:	1548-3770 2640-6853
DOI:	10.1109/DRC.2010.5551909