Search Results - "Hui Youn Shin"
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Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
Published in Scientific reports (25-02-2021)“…To investigate the effects of their surface recovery and optical properties, extremely small sized (12 µm × 12 µm mesa area) red AlGaInP micro light emitting…”
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Journal Article -
2
In-situ STEM study on thermally induced phase transformation of magnetic (Nd0.75Ce0.25)2Fe14B ribbons
Published in Materials & design (01-04-2022)“…[Display omitted] •In-situ heating scanning transmission electron microscopy (STEM) revealed phase and microstructure evolution behavior of melt-spun NdCeFeB…”
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3
Reducing dislocation density in GaN films using a cone-shaped patterned sapphire substrate
Published in Journal of crystal growth (15-08-2009)“…The threading dislocation (TD) density in GaN films grown directly on flat sapphire substrates is typically >10 10/cm 2, which can deteriorate the properties…”
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Journal Article -
4
Microstructural characterization of abnormal grain growth behavior of Al-doped ZnO in thin film solar cells
Published in Surface and interface analysis (01-11-2012)“…The microstructure of abnormal grains in Al‐doped ZnO (AZO) films using a seed layer was examined with the aim of enhancing the performance of transparent…”
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Journal Article Conference Proceeding -
5
Enhancing spatial resolution in Fourier transform infrared spectral image via machine learning algorithms
Published in Scientific reports (20-12-2023)“…Owing to the intrinsic signal noise in the characterization of chemical structures through Fourier transform infrared (FT-IR) spectroscopy, the determination…”
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Journal Article -
6
Effect of oxygen incorporation in a-plane GaN on p-type ohmic contact property
Published in Japanese Journal of Applied Physics (01-09-2014)“…We report on the origin of the non-ohmic behavior of Ni/Au-based p-type contacts on a nonpolar a-plane GaN layer. The contact properties of Ga-polar c-plane…”
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Journal Article -
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Enhancement of crystallinity in ZnO:Al films using a two-step process involving the control of the oxygen pressure
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…The ZnO:Al films were prepared using a two-step process through the control of oxygen pressure by DC-pulsed magnetron sputtering. The seed layers were prepared…”
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Conference Proceeding -
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Effect of buffer layer on the growth of GaN on Si substrate
Published in Journal of crystal growth (01-04-2002)“…For the epitaxial growth of GaN on Si substrate the buffer layer is essential as an anchor to achieve nucleation and duplicate orientation. In this study, AlN…”
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Journal Article -
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Comparison of the microstructural characterizations of GaN layers grown on Si (111) and on sapphire
Published in Journal of the Korean Physical Society (01-10-2013)“…Due to the large differences in the lattice constants and the thermal expansion coefficients between GaN and Si, GaN growth on a Si substrate usually leads…”
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Journal Article -
10
Effect of buffer layer on the growth of GaN on Si substrate
Published in Journal of crystal growth (2002)Get full text
Conference Proceeding