Search Results - "Hueting, R. J. E."

Ruggedness of Silicon Power MOSFETs-Part II: Device Design Failures and Modeling: A Review by Tambone, R., Ferrara, A., Siemieniec, R., Wood, A., Magrini, F., Hueting, R. J. E.

“…Power MOSFETs are crucial devices in a multitude of everyday applications that require an extended lifetime. Inadequate design of these devices may cause…”
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Ruggedness of Silicon Power MOSFETs-Part I: Cell Structure Design Related Failure: A Review by Tambone, R., Ferrara, A., Siemieniec, R., Wood, A., Magrini, F., Hueting, R. J. E.

“…Power metal-oxide-semiconductor field-effect transistors (MOSFETs) play a vital role in numerous everyday applications that require an extended lifetime…”
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Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED by Hueting, R. J. E., de Vries, H., Dutta, S., Annema, A. J.

“…The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented…”
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Ion-Sensitive Gated Bipolar Transistor by Hueting, R. J. E., Vincent, S. E. J., Bomer, J. G., Sanders, R. G. P., Olthuis, W.

“…In this article, we study the ion-sensitive gated bipolar transistor (ISBiT) by forward biasing the source-body diode of the ion-sensitive field-effect…”
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Polarization effects in ferroelectric gate AlGaN/GaN High Electron Mobility Transistors by Zhou, R., Li, L., Zhao, W., Liao, Z., Nguyen, M. D., Nunnenkamp, M., Houwman, E. P., Koster, G., Rijnders, A. J. H. M., Gravesteijn, D. J., Hueting, R. J. E.

“…The impact of polarization effects induced by a ferroelectric layer on the on-state performance of ferroelectric gate AlGaN/GaN HEMTs has been studied by using…”
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Strain characterization of FinFETs using Raman spectroscopy by Kaleli, B., van Hemert, T., Hueting, R.J.E., Wolters, R.A.M.

“…Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The…”
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On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors by Tiggelman, M.P.J., Reimann, K., Van Rijs, F., Schmitz, J., Hueting, R.J.E.

“…A benchmark of tunable and switchable devices at microwave frequencies is presented on the basis of physical limitations to show their potential for…”
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Strain and Conduction-Band Offset in Narrow n-type FinFETs by van Hemert, T., Kaleli, B., Hueting, R. J. E., Esseni, D., van Dal, M. J. H., Schmitz, J.

“…In this paper, we compare measurements of the conduction-band (CB) offset in [110]- and [010]-oriented narrow n-type FinFETs with a model taking into account…”
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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode by Kaleli, B., Nguyen, M.D., Schmitz, J., Wolters, R.A.M., Hueting, R.J.E.

“…[Display omitted] •Thin film PZT/LNO stacks on an encapsulated TiN electrode are studied.•Promising ferroelectric behavior of these thin film layers is…”
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Optimized reflector stacks for solidly mounted bulk acoustic wave resonators by Jose, S, Jansman, A B M, Hueting, R J E, Schmitz, J

“…The quality factor (Q) of a solidly mounted bulk acoustic wave resonator (SMR) is limited by substrate losses, because the acoustic mirror is traditionally…”
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BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substrates by TIGGELMAN, M. P. J, REIMANN, K, KLEE, M, MAUCZOCK, R, KEUR, W, HUETING, RJ. E

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Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs by van der Steen, J.-L.P.J., Hueting, R.J.E., Smit, G.D.J., Hoang, T.., Holleman, J.., Schmitz, J..

“…The effect of quantum confinement in thin silicon-on-insulator double-gate MOSFETs has been directly determined from subthreshold current measurements for the…”
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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode: Micro/Nano Devices and Systems 2013: An open thematic journal issue by KALELI, B, NGUYEN, M. D, SCHMITZ, J, WOLTERS, R. A. M, HUETING, R. J. E

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One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs by Puliyankot, V., Hueting, R. J. E.

“…A simple analytical model for p-i-n light-emitting diodes is presented to give insight into the device physics. The 1-D model describes the dc electrical…”
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Physics-based stability analysis of MOS transistors by Ferrara, A., Steeneken, P.G., Boksteen, B.K., Heringa, A., Scholten, A.J., Schmitz, J., Hueting, R.J.E.

“…In this work, a physics-based model is derived based on a linearization procedure for investigating the electrical, thermal and electro-thermal instability of…”
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Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs by Agarwal, V., Annema, A. J., Dutta, S., Hueting, R. J. E., Nanver, L. K., Nauta, B.

“…The current-voltage (IV ) dependency of diodes close to the breakdown voltage is shown to be governed by Random Telegraph Signal (RTS) phenomena. We present a…”
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Silicon LEDs in FinFET technology by Piccolo, G., Kuindersma, P. I., Ragnarsson, L.-A, Hueting, R. J. E., Collaert, N., Schmitz, J.

“…We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared…”
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The boost transistor: A field plate controlled LDMOST by Ferrara, A., Heringa, A., Boksteen, B. K., Claes, J., van der Wel, A., Schmitz, J., Hueting, R. J. E., Steeneken, P. G.

“…In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost…”
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Interface trap density estimation in FinFETs from the subthreshold current by Schmitz, J., Kaleli, B., Kuipers, P., van den Berg, N., Smits, S. M., Hueting, R. J. E.

“…In this work we present a measurement approach to determine the interface trap density in FinFETs as a function of their energy. It is based on the precise…”
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Active strain modulation in field effect devices by van Hemert, T., Hueting, R. J. E.

“…In this work we propose a novel feature for the transistor: a piezo-electric layer for strain modulation of the channel. The strain is formed at strong…”
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