Search Results - "Huet, Karim"

Surface segregated Ga, In, and Al activation in high Ge content SiGe during UV melt laser induced non-equilibrium solidification by Tabata, Toshiyuki, Huet, Karim, Mazzamuto, Fulvio, La Magna, Antonino

“…The impact of solidification front velocity (SFV) on dopant segregation and activation surpassing the equilibrium solid solubility limit was investigated in…”
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Multiscale modeling of ultrafast melting phenomena by Calogero, Gaetano, Raciti, Domenica, Acosta-Alba, Pablo, Cristiano, Fuccio, Deretzis, Ioannis, Fisicaro, Giuseppe, Huet, Karim, Kerdilès, Sébastien, Sciuto, Alberto, La Magna, Antonino

“…Ultraviolet Nanosecond Laser Annealing (LA) is a powerful tool for both fundamental investigations of ultrafast, nonequilibrium phase-change phenomena and…”
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Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current by Shayesteh, Maryam, O'Connell, Dan, Gity, Farzan, Murphy-Armando, Philip, Ran Yu, Huet, Karim, Toque-Tresonne, Ines, Cristiano, Fuccio, Boninelli, Simona, Henrichsen, Henrik Hartmann, Nielsen, Peter Folmer, Petersen, Dirch Hjorth, Duffy, Ray

“…In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid…”
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Excimer laser annealing for low-voltage power MOSFET by Chen, Yi, Okada, Tatsuya, Noguchi, Takashi, Mazzamuto, Fulvio, Huet, Karim

“…Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction…”
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3D Simulation for Melt Laser Anneal Integration in FinFET's Contact by Tabata, Toshiyuki, Curvers, Benoit, Huet, Karim, Chew, Soon Aik, Everaert, Jean-Luc, Horiguchi, Naoto

“…Process integration feasibility of UV nanosecond melt laser annealing (MLA) in 14 nm node generation FinFET's contact for dopant surface segregation and…”
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Atomically Flat Low-Resistive Germanide Contacts Formed by Laser Thermal Anneal by Shayesteh, M., Huet, K., Toque-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P. B., Petkov, N., Duffy, R.

“…In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated…”
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Doping of semiconductor devices by Laser Thermal Annealing by Huet, Karim, Mazzamuto, Fulvio, Tabata, Toshiyuki, Toqué-Tresonne, Ines, Mori, Yoshihiro

“…In today's highly competitive semiconductor industry, and due to the accelerating pace of technology development, the integration of new and disruptive…”
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Investigation of oxygen penetration during UV nanosecond laser annealing of silicon at high energy densities by Monflier, R., Tabata, T., Rizk, H., Roul, J., Huet, K., Mazzamuto, F., Acosta Alba, P., Kerdilès, S., Boninelli, S., La Magna, A., Scheid, E., Cristiano, F., Bedel-Pereira, E.

“…[Display omitted] •Oxygen and carbon impurities diffusion during melt laser annealing.•Identification and localization of optical defects signatures.•Impact of…”
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Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon by Qiu, Yang, Cristiano, Fuccio, Huet, Karim, Mazzamuto, Fulvio, Fisicaro, Giuseppe, La Magna, Antonino, Quillec, Maurice, Cherkashin, Nikolay, Wang, Huiyuan, Duguay, Sébastien, Blavette, Didier

“…Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission…”
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On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon by Marqués, Luis A., Aboy, María, Santos, Iván, López, Pedro, Cristiano, Fuccio, La Magna, Antonino, Huet, Karim, Tabata, Toshiyuki, Pelaz, Lourdes

“…We combine focused experiments with molecular dynamics simulations to investigate in detail the formation of {0 0 1} loops in nanosecond laser-annealed…”
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Ultrafast Generation of Unconventional {001} Loops in Si by Marqués, Luis A, Aboy, María, Santos, Iván, López, Pedro, Cristiano, Fuccio, La Magna, Antonino, Huet, Karim, Tabata, Toshiyuki, Pelaz, Lourdes

“…Ultrafast laser annealing of ion implanted Si has led to thermodynamically unexpected large {001} self-interstitial loops, and the failure of Ostwald ripening…”
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Nickel silicide contacts formed by excimer laser annealing for high efficiency solar cells by Tous, Loic, Lerat, Jean-Francois, Emeraud, Thierry, Negru, Razvan, Huet, Karim, Uruena, Angel, Aleman, Monica, Meersschaut, Johan, Bender, Hugo, Russell, Richard, John, Joachim, Poortmans, Jef, Mertens, Robert

“…ABSTRACT Driven by the relatively high cost of silver (Ag), interest has grown in the photovoltaic (PV) industry to substitute conventional screen printed (SP)…”
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Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections by Sciuto, Alberto, Deretzis, Ioannis, Fisicaro, Giuseppe, Lombardo, Salvatore F., Magna, Antonino La, Grimaldi, Maria Grazia, Huet, Karim, Lespinasse, Bobby, Verstraete, Armand, Curvers, Benoit, Bejenari, Igor, Burenkov, Alexander, Pichler, Peter

“…Current semiconductor device manufacturing often needs the integration of annealing process steps with a low thermal budget; and, among them, pulsed laser…”
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Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium by Boninelli, S., Milazzo, R., Carles, R., Houdellier, F., Duffy, R., Huet, K., La Magna, A., Napolitani, E., Cristiano, F.

“…Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion…”
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On the Ability of the Particle Monte Carlo Technique to Include Quantum Effects in Nano-MOSFET Simulation by Querlioz, D., Saint-Martin, J., Huet, K., Bournel, A., Aubry-Fortuna, V., Chassat, C., Galdin-Retailleau, S., Dollfus, P.

“…In this paper, we report on the possibility of using particle-based Monte Carlo (MC) techniques to incorporate all relevant quantum effects in the simulation…”
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Investigation of the enlargement of Ru grains and failure modes analysis in microsecond UV laser annealing by Chehadi, Zeinab, Daubriac, Richard, Lu, Lu, Huet, Karim, Tokei, Zsolt, Cancellara, Leonardo, Cristiano, Fuccio, Thuries, Louis

“…Interconnects based on Ru has been considered as a promising candidate to replace Cu-based interconnects for the future technology nodes thanks to its low bulk…”
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On the ability of the particle monte carlo technique to include quantum effects in nano-MOSFET simulation : Simulation and modeling of nanoelectronics devices by QUERLIOZ, Damien, SAINT-MARTIN, Jérome, HUET, Karim, BOUMEL, Arnaud, AUBRY-FORTUNA, Valérie, CHASSAT, Christophe, GALDIN-RETAILLEAU, Sylvie, DOLLFUS, Philippe

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Recent Progresses and Perspectives of UV Laser Annealing Technologies for Advanced CMOS Devices by Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sébastien, Raynal, Pierre-Edouard, Karmous, Imen, Huet, Karim

“…The state-of-the-art CMOS technology has started to adopt three-dimensional (3D) integration approaches, enabling continuous chip density increment and…”
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Microsecond non-melt UV laser annealing for future 3D-stacked CMOS by Tabata, Toshiyuki, Rozé, Fabien, Thuries, Louis, Halty, Sebastien, Raynal, Pierre-Edouard, Huet, Karim, Mazzamuto, Fulvio, Joshi, Abhijeet, Basol, Bulent M, Alba, Pablo Acosta, Kerdilès, Sébastien

“…Three-dimensional (3D) CMOS technology encourages the use of UV laser annealing (UV-LA) because the shallow absorption of UV light into materials and the…”
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Super Activation of Highly Surface Segregated Dopants in High Ge Content SiGe Obtained by Melt UV Laser Annealing by Tabata, Toshiyuki, Aubin, Joris, Huet, Karim, Mazzamuto, Fulvio, Mori, Yoshihiro, La Magna, Antonino, Rubin, Leonard M., Kopalidis, Petros, Tsai, Hao-Cheng, Roh, Dwight, Reece, Ronald

“…Activation of surface segregated dopants above the solid solubility limit in a high Ge content SiGe substrate has been demonstrated by nanosecond melt UV laser…”
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