Search Results - "Hubert, Quentin"

Electrical and optical localisation of leakage current and breakdown point in SiOC:H low-k dielectrics by Vidal-Dho, Matthias, Hubert, Quentin, Gonon, Patrice, Pelissier, Bernard, Lentrein, Philippe, Ray, Patrice, Moragues, Jean-Michel, Fornara, Pascal

“…This paper presents a novel methodology to observe the leakage current origin in SiOC:H low-\kappa intermetallic dielectric as well as a method to localise…”
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Assessment of Self-Induced Joule-Heating Effect in the I―V Readout Region of Polycrystalline Ge2Sb2Te5 Phase-Change Memory by BETTI BENEVENTI, Giovanni, PERNIOLA, Luca, HUBERT, Quentin, GLIERE, Alain, LARCHER, Luca, PAVAN, Paolo, DE SALVO, Barbara

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Detailed Analysis of the Role of Thin-HfO2 Interfacial Layer in Ge2Sb2Te5-Based PCM by HUBERT, Quentin, JAHAN, Carine, TOFFOLI, Alain, DELAYE, Vincent, LAFOND, Dominique, GRAMPEIX, Helen, DE SALVO, Barbara

“…Vol. 60, no.7, pp.2268-2275, doi: (July 2013)…”
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Computing the optimal keyboard through a geometric analysis of the English language by Deschamps, Jules, Hubert, Quentin, Ryckelynck, Lucas

“…In the context of a group project for the course COMSW4995 002 - Geometric Data Analysis, we bring our attention to the design of fast-typing keyboards…”
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Detailed Analysis of the Role of Thin- Interfacial Layer in -Based PCM by Hubert, Q., Jahan, C., Toffoli, A., Delaye, V., Lafond, D., Grampeix, H., de Salvo, B.

“…In this paper, we show that performances of Ge 2 Sb 2 Te 5 -based phase-change memory (PCM) cells can be improved by the insertion of a thin HfO 2 interfacial…”
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Moisture Influence on Reliability and Electrical Characteristics of SiOC:H Low-k Dielectric Material by Vidal-Dho, Matthias, Hubert, Quentin, Gonon, Patrice, Pelissier, Bernard, Fornara, Pascal, Escales, Jean-Philippe, Potard, Pascale, Moragues, Jean-Michel, Ogier, Jean-Luc

“…This paper presents an in depth study of the moisture influence on reliability and electrical characteristics of SiOC:H low-κ dielectric material. Firstly,…”
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Probing impact on pad moisture tightness: A challenge for pad size reduction by Vidal-Dho, Matthias, Hubert, Quentin, Gonon, Patrice, Delorme, Philippe, Jacquot, Jonathan, Marchetti, Maxime, Beauvisage, Ludovic, Moragues, Jean-Michel, Potard, Pascale, Fornara, Pascal, Escales, Jean-Philippe, Sallagoity, Pascal, Pizzuto, Olivier, Maury, Delphine, Mirabel, Jean-Michel

“…This paper underlines the damages induced by probing on narrow pads reliability of specifically designed test structures placed on dicing streets and indicates…”
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Assessment of Self-Induced Joule-Heating Effect in the I- V Readout Region of Polycrystalline \hbox\hbox\hbox Phase-Change Memory by Beneventi, G. B., Perniola, L., Hubert, Q., Gliere, A., Larcher, L., Pavan, P., De Salvo, B.

“…The physical mechanisms that regulate carrier transport in polycrystalline chalcogenides, such as Ge 2 Sb 2 Te 5 (GST), are still debated. Recently,…”
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