Search Results - "Hubík, P."

Determination of atomic boron concentration in heavily boron-doped diamond by Raman spectroscopy by Mortet, V., Živcová, Z. Vlčková, Taylor, A., Davydová, M., Frank, O., Hubík, P., Lorincik, J., Aleshin, M.

“…Raman spectroscopy has been foreseen as a simple and non-destructive characterization method to determine the boron concentration in heavily boron-doped…”
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Analysis of heavily boron-doped diamond Raman spectrum by Mortet, V., Taylor, A., Vlčková Živcová, Z., Machon, D., Frank, O., Hubík, P., Tremouilles, D., Kavan, L.

“…Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However,…”
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Insight into boron-doped diamond Raman spectra characteristic features by Mortet, V., Vlčková Živcová, Z., Taylor, A., Frank, O., Hubík, P., Trémouilles, D., Jomard, F., Barjon, J., Kavan, L.

“…Characteristic Raman features of boron-doped diamond layers with metallic conduction are studied experimentally and discussed in comparison with an extensive…”
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Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers by Hazdra, P., Laposa, A., Šobáň, Z., Taylor, A., Lambert, N., Povolný, V., Kroutil, J., Gedeonová, Z., Hubík, P., Mortet, V.

“…Pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond were successfully fabricated using molybdenum as a metal for both the Schottky and…”
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Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD by Taylor, A., Ashcheulov, P., Hubík, P., Klimša, L., Kopeček, J., Remeš, Z., Vlčková Živcová, Z., Remzová, M., Kavan, L., Scheid, E., Lorinčík, J., Mortet, V.

“…We report on the optimisation of precursor gas composition for the repeatable preparation of large area highly conductive boron doped nano-crystalline diamond…”
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Conductivity of boron-doped polycrystalline diamond films: influence of specific boron defects by Ashcheulov, P., Šebera, J., Kovalenko, A., Petrák, V., Fendrych, F., Nesládek, M., Taylor, A., Vlčková Živcová, Z., Frank, O., Kavan, L., Dračínský, M., Hubík, P., Vacík, J., Kraus, I., Kratochvílová, I.

“…The resistivity of boron doped polycrystalline diamond films changes with boron content in a very complex way with many unclear factors. From the large number…”
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Characteristics of zirconium and niobium contacts on boron-doped diamond by Davydova, M., Taylor, A., Hubík, P., Fekete, L., Klimša, L., Trémouilles, D., Soltani, A., Mortet, V.

“…Formation of ohmic contacts on boron-doped diamond using zirconium and niobium has been studied in comparison to the commonly used titanium or tantalum…”
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Improvement of luminescence properties of n-GaN using TEGa precursor by Hubáček, T., Hospodková, A., Kuldová, K., Slavická Zíková, M., Pangrác, J., Čížek, J., Liedke, M.O., Butterilng, M., Wagner, A., Hubík, P., Hulicius, E.

“…•Growth from TEGa precursor improved luminescence and structural properties of n-GaN.•Type of carrier gas significantly influences properties of…”
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Properties of boron-doped (113) oriented homoepitaxial diamond layers by Mortet, V., Taylor, A., Lambert, N., Gedeonová, Z., Fekete, L., Lorinčik, J., Klimša, L., Kopeček, J., Hubík, P., Šobáň, Z., Laposa, A., Davydova, M., Voves, J., Pošta, A., Povolný, V., Hazdra, P.

“…Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices…”
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Impact of Ge doping on MOVPE grown InGaN layers by Hubáček, T., Kuldová, K., Gedeonová, Z., Hájek, F., Košutová, T., Banerjee, S., Hubík, P., Pangrác, J., Vaněk, T., Hospodková, A.

“…•InGaN:Ge layer with 8 % of In and 1020 cm−3 free carriers concentration was grown.•Decrease in GeH4 flow resulted in a higher In content of InGaN layers.•Ge…”
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Modeling current transport in boron-doped diamond at high electric fields including self-heating effect by Lambert, N., Taylor, A., Hubík, P., Bulíř, J., More-Chevalier, J., Karaca, H., Fleury, C., Voves, J., Šobáň, Z., Pogany, D., Mortet, V.

“…In this work, current multiplication at high electric field in epitaxial boron-doped diamond with high acceptor concentration is analyzed, including…”
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Correlation between crystallization and oxidation process of ScN films exposed to air by More-Chevalier, J., Cichoň, S., Horák, L., Bulíř, J., Hubík, P., Gedeonová, Z., Fekete, L., Poupon, M., Lančok, J.

“…•Deposition and growth of ScN film on crystalline and amorphous substrates.•XPS Study of ScN film oxidation and stability – deposition and post-deposition…”
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Peculiarities of high electric field conduction in p-type diamond by Mortet, V., Trémouilles, D., Bulíř, J., Hubík, P., Heller, L., Bedel-Pereira, E., Soltani, A.

“…The electrical properties of chemical vapour deposited p-type epitaxial diamond layers are studied in high electric field conditions. The quasi-static…”
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Electronic functionality of Gd-bisphthalocyanine: Charge carrier concentration, charge mobility, and influence of local magnetic field by Kratochvílová, I., Šebera, J., Paruzel, B., Pfleger, J., Toman, P., Marešová, E., Havlová, Š., Hubík, P., Buryi, M., Vrňata, M., Słota, R., Zakrzyk, M., Lančok, J., Novotný, M.

“…[Display omitted] •Specific parameters affecting GdPc2 electrical conductivity were experimentally and theoretically studied.•Molecular arrangement and…”
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Charge collection efficiency of Pt vs. Mg contacts on semi-insulating GaAs by Dubecký, F., Zaťko, B., Kolesár, V., Kindl, D., Hubík, P., Gombia, E., Dubecký, M.

“…•Comparison of Pt vs Mg-based contacts on semi-insulating GaAs.•Transport, alpha-particle charge collection efficiency, electronic structure modeling.•Vast…”
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Optical and structural properties of ZnO:Eu thin films grown by pulsed laser deposition by Novotný, M., Vondráček, M., Marešová, E., Fitl, P., Bulíř, J., Pokorný, P., Havlová, Š., Abdellaoui, N., Pereira, A., Hubík, P., More-Chevalier, J., Lančok, J.

“…•ZnO:Eu thin films successfully deposited by PLD at room temperature.•Film exhibited wurtzite structure.•Emission of both Eu2+ and Eu3+ observed using indirect…”
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A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization by Dubecký, F., Kindl, D., Hubík, P., Mičušík, M., Dubecký, M., Boháček, P., Vanko, G., Gombia, E., Nečas, V., Mudroň, J.

“…•Explored were diodes with full-area low/high work function metal contacts on semi-insulating GaAs (S).•The Mg-S-Mg diode is promising for radiation detectors…”
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Low temperature synthesis of transparent conductive boron doped diamond films for optoelectronic applications: Role of hydrogen on the electrical properties by Ashcheulov, P., Taylor, A., Vlčková Živcová, Z., Hubík, P., Honolka, J., Vondráček, M., Remzová, M., Kopeček, J., Klimša, L., Lorinčik, J., Davydova, M., Remeš, Z., Kohout, M., Beltran, A.M., Mortet, V.

“…•Synthesis of nanocrystalline boron-doped diamond (BDD) films at 250 °C via CVD method.•Low temperature (250 °C) fabrication of transparent conductive…”
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Positron Structural Analysis of ScN Films Deposited on MgO Substrate by More-Chevalier, J., Horák, L., Cichoň, S., Hruška, P., Čížek, J., Liedke, M.O., Butterling, M., Wagner, A., Bulíř, J., Hubík, P., Gedeonová, Z., Lančok, J.

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Contribution by Lazare and Sadi Carnot to the caloric theory of heat and its inspirative role in thermodynamics by Šesták, J., Mareš, J. J., Hubík, P., Proks, I.

“…The works of Lazare and Sadi Carnots are reviewed emphasizing their contribution to the caloric theory of heat, which is consequently analyzed in terms of an…”
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