Search Results - "Huapu Pan"
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High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer
Published in IEEE journal of quantum electronics (01-05-2010)“…We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or "cliff" layer to attain high-saturation-current…”
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2
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
Published in Optics express (12-12-2011)“…We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as…”
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3
4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency
Published in IEEE photonics technology letters (15-09-2008)“…We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm,…”
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4
High-Linearity Uni-Traveling-Carrier Photodiodes
Published in IEEE photonics technology letters (01-12-2009)“…The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and…”
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5
High-Power Monolithically Integrated Traveling Wave Photodiode Array
Published in IEEE photonics technology letters (01-12-2009)“…A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is…”
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Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes
Published in IEEE journal of quantum electronics (01-10-2011)“…We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the…”
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High-Power Integrated Balanced Photodetector
Published in IEEE photonics technology letters (15-12-2009)“…We report a high-power balanced photodetector with 0.82-A/W responsivity and saturation current of 136 mA (10°C ) per photodiode at 11 GHz. The common mode…”
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Linearity of Modified Uni-Traveling Carrier Photodiodes
Published in Journal of lightwave technology (2008)“…The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a…”
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9
The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements
Published in IEEE journal of quantum electronics (01-03-2009)“…The effect of modulated voltage on the nonlinear response of an InGaAs-InP charge-compensated modified uni-traveling carrier photodiode is characterized using…”
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A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance
Published in Journal of lightwave technology (15-10-2009)“…Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup…”
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11
High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers
Published in Journal of lightwave technology (15-04-2010)“…A modified uni-traveling-carrier photodiode-based V-band optoelectronic mixer is demonstrated. The relative optical local oscillator (LO) and optical…”
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12
Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques
Published in Journal of lightwave technology (01-05-2010)“…The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling carrier photodiode with a highly doped p-type absorber is characterized using…”
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13
Photodiodes With Monolithically Integrated Wilkinson Power Combiner
Published in IEEE journal of quantum electronics (01-04-2010)“…We report the output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson…”
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14
Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier Photodiode
Published in IEEE photonics technology letters (15-07-2008)“…The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a…”
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15
Simultaneous Dielectrophoretic Separation and Assembly of Single-Walled Carbon Nanotubes on Multigap Nanoelectrodes and Their Thermal Sensing Properties
Published in Analytical chemistry (Washington) (01-12-2006)“…By using the specifically designed multigap nanoelectrodes, we demonstrated an effective approach for the simultaneous dielectrophoretic separation and…”
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16
Minimizing Photodiode Nonlinearities by Compensating Voltage-Dependent Responsivity Effects
Published in Journal of lightwave technology (15-11-2010)“…Two voltage-dependant responsivity effects, impact ionization and Franz-Keldysh oscillations, are shown to have opposing effects at certain wavelengths in…”
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17
Characterization and optimization of high-power InGaAs/InP photodiodes
Published in Optical and quantum electronics (2008)“…The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device…”
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18
Phase characterization of intermodulation distortion in high-linearity photodiodes
Published in 2012 International Conference on Indium Phosphide and Related Materials (01-08-2012)“…We present a simple method to obtain both magnitude and phase information of intermodulation distortion (IMD) in photodiodes. The IMD3 of the high-linearity…”
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Conference Proceeding -
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Breaking the conventional limitations of microrings
Published in 2014 Conference on Lasers and Electro-Optics (CLEO) - Laser Science to Photonic Applications (01-06-2014)“…We demonstrate microring resonators with full tunability, modulation bandwidths exceeding the linewidth limit, and improved tolerance to wafer-scale…”
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Conference Proceeding -
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The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma
Published in Journal of crystal growth (2007)“…In this study, the etching characteristics of AlxGa1-xN/GaN superlattices with x=0.11 and 0.21 of Al and n-GaN with Cl2/SiCl4/Ar plasma using reactive ion…”
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Conference Proceeding Journal Article