Search Results - "Huapu Pan"

Refine Results
  1. 1

    High-Saturation-Current Modified Uni-Traveling-Carrier Photodiode With Cliff Layer by Zhi Li, Huapu Pan, Hao Chen, Beling, Andreas, Campbell, Joe C

    Published in IEEE journal of quantum electronics (01-05-2010)
    “…We demonstrate two modified uni-traveling carrier photodiode (MUTC) structures that incorporate a charge or "cliff" layer to attain high-saturation-current…”
    Get full text
    Journal Article
  2. 2

    High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode by Li, Zhi, Fu, Yang, Piels, Molly, Pan, Huapu, Beling, Andreas, Bowers, John E, Campbell, Joe C

    Published in Optics express (12-12-2011)
    “…We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as…”
    Get full text
    Journal Article
  3. 3

    4H-SiC PIN Recessed-Window Avalanche Photodiode With High Quantum Efficiency by Handin Liu, Mcintosh, D., Xiaogang Bai, Huapu Pan, Mingguo Liu, Campbell, J.C., Ho Young Cha

    Published in IEEE photonics technology letters (15-09-2008)
    “…We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm,…”
    Get full text
    Journal Article
  4. 4

    High-Linearity Uni-Traveling-Carrier Photodiodes by Huapu Pan, Beling, A., Campbell, J.C.

    Published in IEEE photonics technology letters (01-12-2009)
    “…The third-order intermodulation distortions of an InGaAs-InP charge-compensated uni-traveling-carrier photodiode are characterized using both two-tone and…”
    Get full text
    Journal Article
  5. 5

    High-Power Monolithically Integrated Traveling Wave Photodiode Array by Beling, A., Hao Chen, Huapu Pan, Campbell, J.C.

    Published in IEEE photonics technology letters (01-12-2009)
    “…A novel traveling wave photodiode array (TWPDA) based on back-illuminated InGaAs-InP charge compensated modified uni-traveling carrier photodiodes is…”
    Get full text
    Journal Article
  6. 6

    Characterizing and Modeling Nonlinear Intermodulation Distortions in Modified Uni-Traveling Carrier Photodiodes by Yang Fu, Huapu Pan, Zhi Li, Beling, Andreas, Campbell, Joe C.

    Published in IEEE journal of quantum electronics (01-10-2011)
    “…We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<;3 GHz), the…”
    Get full text
    Journal Article
  7. 7

    High-Power Integrated Balanced Photodetector by Zhi Li, Hao Chen, Huapu Pan, Beling, A., Campbell, J.C.

    Published in IEEE photonics technology letters (15-12-2009)
    “…We report a high-power balanced photodetector with 0.82-A/W responsivity and saturation current of 136 mA (10°C ) per photodiode at 11 GHz. The common mode…”
    Get full text
    Journal Article
  8. 8

    Linearity of Modified Uni-Traveling Carrier Photodiodes by Beling, A., Huapu Pan, Hao Chen, Campbell, J.C.

    Published in Journal of lightwave technology (2008)
    “…The third-order intermodulation distortions of an InGaAs/InP charge compensated modified uni-traveling carrier (UTC) photodiode are characterized using a…”
    Get full text
    Journal Article
  9. 9

    The Frequency Behavior of the Intermodulation Distortions of Modified Uni-Traveling Carrier Photodiodes Based on Modulated Voltage Measurements by Huapu Pan, Beling, A., Hao Chen, Campbell, J.C.

    Published in IEEE journal of quantum electronics (01-03-2009)
    “…The effect of modulated voltage on the nonlinear response of an InGaAs-InP charge-compensated modified uni-traveling carrier photodiode is characterized using…”
    Get full text
    Journal Article
  10. 10

    A High-Linearity Modified Uni-Traveling Carrier Photodiode With Offset Effects of Nonlinear Capacitance by Huapu Pan, Campbell, J.C., Beling, A., Hao Chen, Yoder, P.D.

    Published in Journal of lightwave technology (15-10-2009)
    “…Third-order intermodulation distortion in an InGaAs/InP charge compensated modified uni-traveling carrier photodiode is characterized using a two-tone setup…”
    Get full text
    Journal Article
  11. 11

    High-Power High-Responsivity Modified Uni-Traveling-Carrier Photodiode Used as V-Band Optoelectronic Mixers by Huapu Pan, Zhi Li, Campbell, J.C.

    Published in Journal of lightwave technology (15-04-2010)
    “…A modified uni-traveling-carrier photodiode-based V-band optoelectronic mixer is demonstrated. The relative optical local oscillator (LO) and optical…”
    Get full text
    Journal Article
  12. 12

    Characterization of High-Linearity Modified Uni-Traveling Carrier Photodiodes Using Three-Tone and Bias Modulation Techniques by Huapu Pan, Zhi Li, Beling, Andreas, Campbell, Joe C

    Published in Journal of lightwave technology (01-05-2010)
    “…The linearity performance of a back-illuminated InGaAs/InP modified uni-traveling carrier photodiode with a highly doped p-type absorber is characterized using…”
    Get full text
    Journal Article
  13. 13

    Photodiodes With Monolithically Integrated Wilkinson Power Combiner by Yang Fu, Huapu Pan, Campbell, J.C.

    Published in IEEE journal of quantum electronics (01-04-2010)
    “…We report the output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson…”
    Get full text
    Journal Article
  14. 14

    Measurement and Modeling of a High-Linearity Modified Uni-Traveling Carrier Photodiode by Beling, A., Pan, H., Hao Chen, Campbell, J.C.

    Published in IEEE photonics technology letters (15-07-2008)
    “…The third-order intermodulation distortions of an InGaAs-InP charge compensated modified uni-traveling carrier photodiode (PD) are characterized using a…”
    Get full text
    Journal Article
  15. 15

    Simultaneous Dielectrophoretic Separation and Assembly of Single-Walled Carbon Nanotubes on Multigap Nanoelectrodes and Their Thermal Sensing Properties by Chen, Zhuo, Wu, Zhongyun, Tong, Lianming, Pan, Huapu, Liu, Zhongfan

    Published in Analytical chemistry (Washington) (01-12-2006)
    “…By using the specifically designed multigap nanoelectrodes, we demonstrated an effective approach for the simultaneous dielectrophoretic separation and…”
    Get full text
    Journal Article
  16. 16

    Minimizing Photodiode Nonlinearities by Compensating Voltage-Dependent Responsivity Effects by Hastings, A S, Tulchinsky, D A, Williams, K J, Huapu Pan, Beling, A, Campbell, J C

    Published in Journal of lightwave technology (15-11-2010)
    “…Two voltage-dependant responsivity effects, impact ionization and Franz-Keldysh oscillations, are shown to have opposing effects at certain wavelengths in…”
    Get full text
    Journal Article
  17. 17

    Characterization and optimization of high-power InGaAs/InP photodiodes by Pan, Huapu, Beling, Andreas, Chen, Hao, Campbell, Joe C.

    Published in Optical and quantum electronics (2008)
    “…The performance of 34-μm-diameter InGaAs/InP charge compensated modified uni-traveling carrier photodiodes (CC MUTCs) is studied using a commercial device…”
    Get full text
    Journal Article
  18. 18

    Phase characterization of intermodulation distortion in high-linearity photodiodes by Yang Fu, Huapu Pan, Beling, A., Campbell, J.

    “…We present a simple method to obtain both magnitude and phase information of intermodulation distortion (IMD) in photodiodes. The IMD3 of the high-linearity…”
    Get full text
    Conference Proceeding
  19. 19

    Breaking the conventional limitations of microrings by Poon, Joyce K. S., Sacher, Wesley D., Mikkelsen, Jared C., Assefa, Solomon, Gill, Douglas M., Barwicz, Tymon, Huapu Pan, Shank, Steven M., Vlasov, Yurii, Green, William M. J.

    “…We demonstrate microring resonators with full tunability, modulation bandwidths exceeding the linewidth limit, and improved tolerance to wafer-scale…”
    Get full text
    Conference Proceeding
  20. 20

    The reactive ion etching characteristics of AlGaN/GaN SLs and etch-induced damage study of n-GaN using Cl2/SiCl4/Ar plasma by Li, Rui, Dai, Tao, Zhu, Ling, Pan, Huapu, Xu, Ke, Zhang, Bei, Yang, Zhijian, Zhang, Guoyi, Gan, Zizhao, Hu, Xiaodong

    Published in Journal of crystal growth (2007)
    “…In this study, the etching characteristics of AlxGa1-xN/GaN superlattices with x=0.11 and 0.21 of Al and n-GaN with Cl2/SiCl4/Ar plasma using reactive ion…”
    Get full text
    Conference Proceeding Journal Article