Search Results - "Huang, Xuanqi"

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  1. 1

    Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers by Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Zhao, Yuji

    Published in Applied physics letters (09-10-2017)
    “…This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN…”
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    Journal Article
  2. 2

    Protection of HT22 neuronal cells against chemically-induced ferroptosis by catechol estrogens: protein disulfide isomerase as a mechanistic target by Huang, Xuanqi, Hou, Ming-Jie, Zhu, Bao Ting

    Published in Scientific reports (14-10-2024)
    “…Ferroptosis is a form of regulated cell death, characterized by excessive iron-dependent lipid peroxidation. Biochemically, ferroptosis can be selectively…”
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  3. 3

    Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV by Houqiang Fu, Baranowski, Izak, Xuanqi Huang, Hong Chen, Zhijian Lu, Montes, Jossue, Xiaodong Zhang, Yuji Zhao

    Published in IEEE electron device letters (01-09-2017)
    “…This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The…”
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  4. 4

    Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction by Montes, Jossue, Yang, Chen, Fu, Houqiang, Yang, Tsung-Han, Fu, Kai, Chen, Hong, Zhou, Jingan, Huang, Xuanqi, Zhao, Yuji

    Published in Applied physics letters (22-04-2019)
    “…This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed…”
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  5. 5

    Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes by Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Zhang, Xiaodong, Zhao, Yuji

    Published in IEEE electron device letters (01-06-2017)
    “…We study vertical GaN p-n and Schottky power diodes with different buffer layer thicknesses grown on free-standing GaN substrates, using metalorganic chemical…”
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  6. 6

    Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition by Fu, Kai, Fu, Houqiang, Liu, Hanxiao, Alugubelli, Shanthan Reddy, Yang, Tsung-Han, Huang, Xuanqi, Chen, Hong, Baranowski, Izak, Montes, Jossue, Ponce, Fernando A., Zhao, Yuji

    Published in Applied physics letters (03-12-2018)
    “…To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n…”
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  7. 7

    Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide by Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Montes, Jossue A, Yang, Tsung-Han, Baranowski, Izak, Zhao, Yuji

    Published in Optics express (19-02-2018)
    “…We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (β-Ga O ), where both (010) β-Ga O and (2¯01) β-Ga O…”
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  8. 8

    Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations by Chen, Hong, Huang, Xuanqi, Fu, Houqiang, Lu, Zhijian, Zhang, Xiaodong, Montes, Jossue A., Zhao, Yuji

    Published in Applied physics letters (01-05-2017)
    “…We report the basic nonlinear optical properties, namely, two-photon absorption coefficient ( β ), three-photon absorption coefficient ( γ ), and Kerr…”
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  9. 9

    Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency by Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Zhang, Xiaodong, Lu, Zhijian, Montes, Jossue, Iza, Michael, DenBaars, Steven P., Nakamura, Shuji, Zhao, Yuji

    Published in Applied physics letters (17-04-2017)
    “…We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on the nonpolar m-plane and semipolar ( 20 2 ¯ 1 ) plane bulk…”
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  10. 10

    Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications by Chen, Hong, Fu, Houqiang, Huang, Xuanqi, Zhang, Xiaodong, Yang, Tsung-Han, Montes, Jossue A, Baranowski, Izak, Zhao, Yuji

    Published in Optics express (11-12-2017)
    “…We perform comprehensive studies on the fundamental loss mechanisms in III-nitride waveguides in the visible spectral region. Theoretical analysis shows that…”
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  11. 11
  12. 12

    Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers by Huang, Xuanqi, Chen, Hong, Fu, Houqiang, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Fu, Kai, Gunning, Brendan P., Koleske, Daniel D., Zhao, Yuji

    Published in Applied physics letters (23-07-2018)
    “…In this paper, we perform a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron- and…”
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  13. 13

    Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress by Huang, Xuanqi, Fu, Houqiang, Chen, Hong, Lu, Zhijian, Baranowski, Izak, Montes, Jossue, Yang, Tsung-Han, Gunning, Brendan P., Koleske, Dan, Zhao, Yuji

    Published in Applied physics letters (04-12-2017)
    “…We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray…”
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  14. 14

    Demonstration of low loss β-Ga2O3 optical waveguides in the UV–NIR spectra by Zhou, Jingan, Chen, Hong, Fu, Houqiang, Fu, Kai, Deng, Xuguang, Huang, Xuanqi, Yang, Tsung-Han, Montes, Jossue A., Yang, Chen, Qi, Xin, Zhang, Baoshun, Zhang, Xiaodong, Zhao, Yuji

    Published in Applied physics letters (16-12-2019)
    “…In this paper, we report the fabrication of low loss beta-phase gallium oxide (β-Ga2O3) optical waveguides and the propagation loss analysis of the waveguides…”
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  15. 15

    Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment by Yang, Chen, Fu, Houqiang, Su, Po-Yi, Liu, Hanxiao, Fu, Kai, Huang, Xuanqi, Yang, Tsung-Han, Chen, Hong, Zhou, Jingan, Deng, Xuguang, Montes, Jossue, Qi, Xin, Ponce, Fernando A., Zhao, Yuji

    Published in Applied physics letters (03-08-2020)
    “…We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power…”
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  16. 16

    Study on Crack Propagation of Rock Bridge in Rock-like Material with Fractures under Compression Loading with Sudden Change Rate by Huang, Xuanqi, Wan, Wen, Wang, Min, Zhou, Yu, Liu, Jie, Chen, Wei

    Published in Applied sciences (01-04-2023)
    “…In order to study the influence of sudden change of loading rate on crack propagation and failure mode of rock bridge of fractured rock mass, the specimens…”
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  17. 17

    Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes by Fu, Kai, Fu, Houqiang, Huang, Xuanqi, Yang, Tsung-Han, Cheng, Chi-Yin, Peri, Prudhvi Ram, Chen, Hong, Montes, Jossue, Yang, Chen, Zhou, Jingan, Deng, Xuguang, Qi, Xin, Smith, David J., Goodnick, Stephen M., Zhao, Yuji

    “…Vertical GaN-on-GaN Schottky barrier diodes based on as-grown and regrown samples were fabricated to investigate the effects of the etch-then-regrow process on…”
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  18. 18

    Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes by Montes, Jossue, Tsung-Han Yang, Houqiang Fu, Hong Chen, Xuanqi Huang, Kai Fu, Baranowski, Izak, Yuji Zhao

    Published in IEEE transactions on nuclear science (01-01-2019)
    “…Lateral Pd/n-AlN Schottky barrier diodes (SBDs) were fabricated and subjected to 3-MeV proton irradiation at various fluences. Electrical and material…”
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  19. 19

    Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD by Fu, Houqiang, Huang, Xuanqi, Chen, Hong, Lu, Zhijian, Zhao, Yuji

    “…AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were…”
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  20. 20

    Experimental demonstration of non-line-of-sight visible light communication with different reflecting materials using a GaN-based micro-LED and modified IEEE 802.11ac by Lu, Zhijian, Tian, Pengfei, Fu, Houqiang, Montes, Jossue, Huang, Xuanqi, Chen, Hong, Zhang, Xiaodong, Liu, Xiaoyan, Liu, Ran, Zheng, Lirong, Zhou, Xiaolin, Gu, Erdan, Liu, Yi, Zhao, Yuji

    Published in AIP advances (01-10-2018)
    “…This paper gives an experimental demonstration of non-line-of-sight (NLOS) visible light communication (VLC) using a single 80 μm gallium nitride (GaN) based…”
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