Search Results - "Huang, Kuan Ning"

Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates by Wu, Wen-Chia, Huang, Kuan-Ning, Su, Chien-Ying, Kei, Chi-Chung, Kuo, Cheng Huang, Chien, Chao-Hsin

“…In this study, we investigated various approaches to manipulate the flake density, size, and thickness of two-dimensional transition metal dichalcogenides by…”
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Comparative study on the H2S gas-sensing properties of graphene aerogels synthesized through hydrothermal and chemical reduction by Bibi, Aamna, Chen, Chia-Yu, Huang, Kuan-Ning, Sathishkumar, Nadaraj, Chen, Hsin-Tsung, Lin, Yi-Feng, Yeh, Jui-Ming, Santiago, Karen S.

“…•First comparative study on graphene aerogels produced via hydrothermal reduction (GA-HR) and chemical reduction (GA-CR) applied in H2S gas sensing at room…”
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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications by Huang, Kuan Ning, Lin, Yueh-Chin, Lin, Jia-Ching, Hsu, Chia Chieh, Lee, Jin Hwa, Wu, Chia-Hsun, Yao, Jing Neng, Hsu, Heng-Tung, Nagarajan, Venkatesan, Kakushima, Kuniyuki, Tsutsui, Kazuo, Iwai, Hiroshi, Chien, Chao Hsin, Chang, Edward Yi

“…An enhancement-mode (E-mode) AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT) with La 2 O 3 /SiO 2 gate insulator is…”
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Study of tri-gate AlGaN/GaN MOS-HEMTs for power application by Huang, Kuan Ning, Lin, Yueh Chin, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Wu, Chieh Ying, Chien, Chao Hsin, Chang, Edward Yi

“…In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel…”
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Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications by Huang, Kuan Ning, Lin, Yueh Chin, Wu, Chieh Ying, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Chien, Chao Hsin, Chang, Edward Yi

“…In this work, an enhancement-mode (E-mode) p-GaN gate metal–oxide–semiconductor high-electron-mobility transistor (MOS-HEMT) with 10-nm-thick Al 2 O 3 film was…”
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WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application by Huang, Kuan Ning, Lin, Yueh Chin, Lee, Jin Hwa, Hsu, Chia Chieh, Yao, Jing Neng, Wu, Chieh Ying, Chien, Chao Hsin, Chang, Edward Yi

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