Search Results - "Hu, E.L"

Transmission measurement of tapered single-line defect photonic crystal waveguides by Aimin Xing, Davanco, M., Blumenthal, D.J., Hu, E.L.

“…Two-dimensional tapered single-line defect photonic crystal (PC) waveguides were fabricated with coupled ridge waveguides in InP-InGaAsP and optical…”
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Compact broadband photonic crystal filters with reduced back-reflections for monolithic InP-based photonic integrated circuits by Davanco, M., Aimin Xing, Raring, J.W., Hu, E.L., Blumenthal, D.J.

“…A photonic crystal grating filter with an extremely wide rejection band and reduced modal back-reflections is proposed and demonstrated with a stopband…”
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Small-signal frequency response of long-wavelength vertical-cavity lasers by Black, K.A., Bjorlin, E.S., Piprek, J., Hu, E.L., Bowers, J.E.

“…The small-signal frequency response of long-wavelength vertical-cavity lasers (LW-VCLs) is of interest in determining the ultimate bandwidth of these devices…”
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Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes by McGroddy, K., David, A., Matioli, E., Iza, M., Nakamura, S., DenBaars, S., Speck, J. S., Weisbuch, C., Hu, E. L.

“…Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design…”
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Fabrication of refractive microlenses in semiconductors by mask shape transfer in reactive ion etching by Strzelecka, E.M., Robinson, G.D., Coldren, L.A., Hu, E.L.

“…Refractive microlenses are formed in semiconductor materials by transfer of a lens-like shape of reflowed erodable polyimide mask into the substrate by…”
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Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly by Belcher, Angela M, Whaley, Sandra R, English, D. S, Hu, Evelyn L, Barbara, Paul F

“…In biological systems, organic molecules exert a remarkable level of control over the nucleation and mineral phase of inorganic materials such as calcium…”
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Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor by Bolognesi, C.R., Werking, J.D., Caine, E.J., Kroemer, H., Hu, E.L.

“…High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are…”
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GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth by David, Aurélien, Moran, B., Mcgroddy, K., Matioli, E., Hu, E.L., Denbaars, S., Nakamura, S., Weisbuch, Claude

“…We introduce GaN/InGaN light emitting diodes with a dielectric photonic crystal embedded in the epitaxial layer by lateral epitaxial overgrowth on a patterned…”
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Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits by Yen, J.C., Zhang, Q., Mondry, M.J., Chavarkar, P.M., Hu, E.L., Long, S.I., Mishra, U.K.

“…We have developed a simple technology for monolithic integration of resonant tunneling diodes (RTDs) and heterostructure junction-modulated field effect…”
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Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers by Wada, H., Babic, D.I., Crawford, D.L., Reynolds, T.E., Dudley, J.J., Bowers, J.E., Hu, E.L., Merz, J.L., Miller, B.I., Koren, U., Young, M.G.

“…Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA…”
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High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors by I-Hsing Tan, Dudley, J.J., Babic, D.I., Cohen, D.A., Young, B.D., Hu, E.L., Bowers, J.E., Miller, B.I., Koren, U., Young, M.G.

“…We demonstrate greater than 90% quantum efficiency in an In/sub 0.53/Ga/sub 0.47/As photodetector with a thin (900 /spl Aring/) absorbing layer. This was…”
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InGaN super-lattice growth for fabrication of quantum dot containing microdisks by El-Ella, H.A.R., Rol, F., Collins, D.P., Kappers, M.J., Taylor, R.A., Hu, E.L., Oliver, R.A.

“…Microstructural characterisation of a heterostructure containing an In x Ga 1− x N/In y Ga 1− y N super-lattice sacrificial layer (SSL), an AlGaN etch stop…”
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Wafer fusion: materials issues and device results by Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang, Y.-L., Abraham, P., Bowers, J.E., Hu, E.L.

“…A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases,…”
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Harmonic distortion in 1.55-[mu]m vertical-cavity lasers by Piprek, J, Takiguchi, K, Black, K.A, Hu, E.L, Bowers, J.E

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Design and analysis of double-fused 1.55-μm vertical-cavity lasers by BABIC, D. I, PIPREK, J, STREUBEL, K, MIRIN, R. P, MARGALIT, N. M, MARS, D. E, BOWERS, J. E, HU, E. L

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Harmonic distortion in 1.55-μm vertical-cavity lasers by Piprek, J., Takiguchi, K., Black, K.A., Hu, E.L., Bowers, J.E.

“…We investigate second and third order harmonics in the analog modulation response of InP-GaAs fused 1.55-μm vertical-cavity lasers (VCLs). These devices…”
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Cl sub 2 and HCl radical beam etching of GaAs and InP by Lishan, D.G., Hu, E.L.

“…Both the thermally activated and remote plasma activated etching reactions between Cl{sub 2} and HCl gases and GaAs and InP substrates are characterized…”
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Laser photon statistics in high-β quantum-dot photonic-crystal nanocavities by Choi, Y.S., Rakher, M.T., Hennessy, K., Strauf, S., Badolato, A., Petroff, P.M., Bouwmeester, D., Hu, E.L.

“…We demonstrate characteristics of InAs/GaAs quantum-dot photonic-crystal lasers with high spontaneous emission coupling efficiencies and soft-turn-on…”
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Design and analysis of double-fused 1.55-/spl mu/m vertical-cavity lasers by Babic, D.I., Piprek, J., Streubel, K., Mirin, R.P., Margalit, N.M., Mars, D.E., Bowers, J.E., Hu, E.L.

“…Detailed design and experimental characterization of three generations of double-fused vertical-cavity lasers are described. The result of this design…”
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Oxidation of AlAs films under ultrahigh vacuum conditions: interaction of H 2O and O 2 with the AlAs(001) surface by Mitchell, W.J., Chung, C.-H., Yi, S.I., Hu, E.L., Weinberg, W.H.

“…The initial stages of oxidation of AlAs(001) (using H 2O and O 2 as the oxidants) have been investigated using Auger electron spectroscopy,…”
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