Search Results - "Hu, E. L"

Quantum nature of a strongly coupled single quantum dot-cavity system by Gerace, D, Fält, S, Imamo lu, A, Hu, E. L, Hennessy, K, Gulde, S, Winger, M, Atatüre, M, Badolato, A

“…Cavity quantum electrodynamics (QED) studies the interaction between a quantum emitter and a single radiation-field mode. When an atom is strongly coupled to a…”
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Self-tuned quantum dot gain in photonic crystal lasers by Strauf, S, Hennessy, K, Rakher, M T, Choi, Y-S, Badolato, A, Andreani, L C, Hu, E L, Petroff, P M, Bouwmeester, D

“…We demonstrate that very few (2-4) quantum dots as a gain medium are sufficient to realize a photonic-crystal laser based on a high-quality nanocavity. Photon…”
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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening by Fujii, T., Gao, Y., Sharma, R., Hu, E. L., DenBaars, S. P., Nakamura, S.

“…Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique…”
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Resistance analysis of the rice variety Huaidao 5 against root-knot nematode Meloidogyne graminicola by FENG, Hui, ZHOU, Can-rong, ZHU, Feng, LE, Xiu-hu, JING, De-dao, Paul, DALY, ZHOU, Dong-mei, WEI, Li-hui

“…Meloidogyne graminicola has emerged as one of the most destructive plant-parasitic nematodes affecting rice (Oryza sativa) production worldwide. Resistance to…”
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Templated growth of diamond optical resonators via plasma-enhanced chemical vapor deposition by Zhang, X., Hu, E. L.

“…We utilize plasma-enhanced chemical vapor deposition through a patterned silica mask for templated diamond growth to create optical resonators. The…”
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GaN blue photonic crystal membrane nanocavities by Choi, Y.-S., Hennessy, K., Sharma, R., Haberer, E., Gao, Y., DenBaars, S. P., Nakamura, S., Hu, E. L., Meier, C.

“…GaN-based photonic-crystal membrane nanocavities with Q factors up to 800 have been realized at the wavelength of ∼ 480 nm . The tuning behavior agrees well…”
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Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching by Sharma, R., Haberer, E. D., Meier, C., Hu, E. L., Nakamura, S.

“…A three-period vertically oriented GaN-based air-gap distributed Bragg reflector structure was fabricated using band-gap-selective photoelectrochemical (PEC)…”
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Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride by Gao, Y., Craven, M. D., Speck, J. S., Den Baars, S. P., Hu, E. L.

“…Polarity and dislocation dependence study of photoelectrochemical wet etching on GaN was carried out on lateral epitaxial overgrown nonpolar…”
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Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching by Haberer, E. D., Sharma, R., Meier, C., Stonas, A. R., Nakamura, S., DenBaars, S. P., Hu, E. L.

“…GaN-based, mushroom-shaped microdisk lasers were fabricated using band-gap selective photoelectrochemical etching. The optically pumped microdisks had…”
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Selection of peptides with semiconductor binding specificity for directed nanocrystal assembly by Belcher, Angela M, Whaley, Sandra R, English, D. S, Hu, Evelyn L, Barbara, Paul F

“…In biological systems, organic molecules exert a remarkable level of control over the nucleation and mineral phase of inorganic materials such as calcium…”
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Room-temperature photoenhanced wet etching of GaN by Minsky, M. S., White, M., Hu, E. L.

“…Laser-enhanced, room-temperature wet etching of GaN using either dilute HCl:H2O (1:10) or 45% KOH:H2O(1:3) is reported. Etch rates of a few hundred Å/min (HCl)…”
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Fabrication and characterization of two-dimensional photonic crystal microcavities in nanocrystalline diamond by Wang, C. F., Hanson, R., Awschalom, D. D., Hu, E. L., Feygelson, T., Yang, J., Butler, J. E.

“…Diamond-based photonic devices offer exceptional opportunity to study cavity quantum electrodynamics at room temperature. Here we report fabrication and…”
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Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes by McGroddy, K., David, A., Matioli, E., Iza, M., Nakamura, S., DenBaars, S., Speck, J. S., Weisbuch, C., Hu, E. L.

“…Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design…”
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Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching by Haberer, E. D., Sharma, R., Stonas, A. R., Nakamura, S., DenBaars, S. P., Hu, E. L.

“…We report on band-gap-selective photoelectrochemical (PEC) etching of thick InGaN layers for use in optical devices, such as GaN microdisks, distributed Bragg…”
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Observation of whispering gallery modes in nanocrystalline diamond microdisks by Wang, C. F., Choi, Y-S., Lee, J. C., Hu, E. L., Yang, J., Butler, J. E.

“…Nanocrystalline diamond microdisks have been fabricated and characterized. The process conditions were chosen to ensure smooth and vertical sidewalls. Focused…”
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Near-field scanning optical spectroscopy of an InGaN quantum well by Crowell, P. A., Young, D. K., Keller, S., Hu, E. L., Awschalom, D. D.

“…Near-field scanning optical microscopy is used to image photoluminescence (PL) in an InGaN/GaN quantum well (QW) with spatial resolution of approximately 100…”
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Wafer fusion: materials issues and device results by Black, A., Hawkins, A.R., Margalit, N.M., Babic, D.I., Holmes, A.L., Chang, Y.-L., Abraham, P., Bowers, J.E., Hu, E.L.

“…A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases,…”
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Spin dynamics in electrochemically charged CdSe quantum dots by STERN, N. P, POGGIO, M, BART, M. H, HU, E. L, STUCKY, G. D, AWSCHALOM, D. D

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Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures by Stonas, A. R., Kozodoy, P., Marchand, H., Fini, P., DenBaars, S. P., Mishra, U. K., Hu, E. L.

“…A photoelectrochemical (PEC) wet-etching technique (backside-illuminated PEC) is described that utilizes the dopant or band-gap selectivity of PEC etching to…”
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InGaN super-lattice growth for fabrication of quantum dot containing microdisks by El-Ella, H.A.R., Rol, F., Collins, D.P., Kappers, M.J., Taylor, R.A., Hu, E.L., Oliver, R.A.

“…Microstructural characterisation of a heterostructure containing an In x Ga 1− x N/In y Ga 1− y N super-lattice sacrificial layer (SSL), an AlGaN etch stop…”
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