Search Results - "Hu, Chenming Calvin"

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer by Ting-En Hsieh, Chang, Edward Yi, Yi-Zuo Song, Yueh-Chin Lin, Huan-Chung Wang, Shin-Chien Liu, Salahuddin, Sayeef, Hu, Chenming Calvin

“…In this letter, a gate recessed normally OFF AlGaN/GaN MIS-HEMT with low threshold voltage hysteresis using Al 2 O 3 /AlN stack gate insulator is presented…”
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BSIM-SPICE Models Enable FinFET and UTB IC Designs by Paydavosi, Navid, Venugopalan, Sriramkumar, Chauhan, Yogesh Singh, Duarte, Juan Pablo, Jandhyala, Srivatsava, Niknejad, Ali M., Hu, Chenming Calvin

“…Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs. The BSIM-CMG…”
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Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack by Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi

“…AlN has successfully been applied to passivate the oxide/III-V interface; however, it changes both the metal work function (WF) and band alignment of the…”
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Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As by Huy Binh Do, Quang Ho Luc, Minh Thien Huu Ha, Sa Hoang Huynh, Chenming Calvin Hu, Yueh Chin Lin, Yi Chang, Edward

“…To achieve low power consumption for CMOS devices, the gate metals must have effective work function (EWF) aligned with the band edges of the channel material…”
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BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control by Khandelwal, S., Chauhan, Y. S., Lu, D. D., Venugopalan, S., Karim, Muhammed Ahosan Ul, Sachid, A. B., Bich-Yen Nguyen, Rozeau, O., Faynot, O., Niknejad, A. M., Hu, C. C.

“…In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong…”
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Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density by Quang Ho Luc, Huy Binh Do, Minh Thien Huu Ha, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi

“…The impact of in situ plasma-enhanced atomic layer deposition passivation on the electrical properties of HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor…”
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Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer by Quang Ho Luc, Chang, Edward Yi, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Salahuddin, Sayeef, Hu, Chenming Calvin

“…The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al 2 O 3 /In 0.53 Ga 0.47 As interfaces qualities…”
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Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO sub(2)/In sub(0.53)Ga sub(0.47)As Gate-Stack by Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Hu, Chenming Calvin, Lin, Yueh Chin, Chang, Edward Yi

“…AlN has successfully been applied to passivate the oxide/III-V interface; however, it changes both the metal work function (WF) and band alignment of the…”
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Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In 0.53 Ga 0.47 As by Do, Huy Binh, Luc, Quang Ho, Ha, Minh Thien Huu, Huynh, Sa Hoang, Hu, Chenming Calvin, Lin, Yueh Chin, Chang, Edward Yi

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors by Quang Ho Luc, Shou Po Cheng, Po Chun Chang, Huy Binh Do, Jin Han Chen, Minh Thien Huu Ha, Sa Hoang Huynh, Hu, Chenming Calvin, Yueh Chin Lin, Chang, Edward Yi

“…In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO 2 /In…”
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Phenomenological Compact Model for QM Charge Centroid in Multigate FETs by Venugopalan, S., Karim, M. A., Salahuddin, S., Niknejad, A. M., Hu, C. C.

“…We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The…”
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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO sub(2)/In sub(0.53)Ga sub(0.47)As Metal-Oxide-Semiconductor Field-Effect Transistors by Luc, Quang Ho, Cheng, Shou Po, Chang, Po Chun, Do, Huy Binh, Chen, Jin Han, Ha, Minh Thien Huu, Huynh, Sa Hoang, Hu, Chenming Calvin, Lin, Yueh Chin, Chang, Edward Yi

“…In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO…”
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Electrical Characteristics of n, p-In sub(0.53)Ga sub(0.47)As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer by Luc, Quang Ho, Chang, Edward Yi, Trinh, Hai Dang, Lin, Yueh Chin, Nguyen, Hong Quan, Wong, Yuen Yee, Do, Huy Binh, Salahuddin, Sayeef, Hu, Chenming Calvin

“…The effects of plasma enhanced atomic layer deposition (PEALD)-AlN interfacial passivation layer (IPL) on the Al sub(2)O sub(3)/In sub(0. 53)Ga sub(0.47)As…”
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Electrical Characteristics of n, p-In 0.53 Ga 0.47 As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer by Quang Ho Luc, Chang, Edward Yi, Hai Dang Trinh, Yueh Chin Lin, Hong Quan Nguyen, Yuen Yee Wong, Huy Binh Do, Salahuddin, Sayeef, Hu, Chenming Calvin

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BSIM compact MOSFET models for SPICE simulation by Singh Chauhan, Yogesh, Venugopalan, Sriram, Paydavosi, Navid, Kushwaha, Pragya, Jandhyala, Srivatsava, Duarte, Juan Pablo, Agnihotri, Shantanu, Yadav, Chandan, Agarwal, Harshit, Niknejad, Ali, Hu, Chenming Calvin

“…Continuous technology advancements have forced MOSFET architecture to evolve from bulk to SOI to multigate MOSFETs. BSIM compact models have helped circuit…”
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