Search Results - "Hsu, Shawn S. H."
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1
Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits
Published in ACS nano (26-08-2014)“…Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a…”
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2
Transmission Lines-Based Impedance Matching Technique for Broadband Rectifier
Published in IEEE access (01-01-2021)“…A high-efficiency compact broadband rectifier is developed for wireless energy harvesting. A novel three-stage impedance matching technique is utilized in a…”
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3
Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene
Published in ACS applied materials & interfaces (13-02-2019)“…High-quality graphene grown on metal-free substrates represents a vital milestone that provides an atomic clean interface and a complementary…”
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4
A Multi-ESD-Path Low-Noise Amplifier With a 4.3-A TLP Current Level in 65-nm CMOS
Published in IEEE transactions on microwave theory and techniques (01-12-2010)“…This paper studies the electrostatic discharge (ESD)-protected RF low-noise amplifiers (LNAs) in 65-nm CMOS technology. Three different ESD designs, including…”
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5
CMOS Distributed Amplifiers Using Gate-Drain Transformer Feedback Technique
Published in IEEE transactions on microwave theory and techniques (01-08-2013)“…This paper presents CMOS distributed amplifiers (DAs) using the proposed gate-drain transformer feedback technique. The feedback allows reuse of the traveling…”
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6
Electro-Static Discharge Protection Design for V-Band Low-Noise Amplifier Using Radio Frequency Junction Varactor
Published in Japanese Journal of Applied Physics (01-04-2013)“…The RF junction varactors are employed as electro-static discharge (ESD) protection devices and co-designed with 60 GHz low-noise amplifier (LNA) fabricated in…”
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7
High-Power Wire Bonded GaN Rectifier for Wireless Power Transmission
Published in IEEE access (2020)“…A novel wire bonded GaN rectifier for high-power wireless power transfer (WPT) applications is proposed. The low breakdown voltage in silicon Schottky diodes…”
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8
AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio
Published in IEEE electron device letters (01-02-2010)“…In this letter, we propose using an oxide-filled isolation structure followed by N 2 /H 2 postgate annealing to reduce the leakage current in AlGaN/GaN HEMTs…”
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9
An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS
Published in IEEE microwave and wireless components letters (01-04-2012)“…An ultra-low-power 60 GHz low-noise amplifier (LNA) with a 12.5 dB peak gain and a 5.4 dB minimum NF is demonstrated in a 90 nm CMOS technology. The LNA is…”
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10
A 76.2-89.1 GHz Phase-Locked Loop With 15.6% Tuning Range in 90 nm CMOS for W-Band Applications
Published in IEEE microwave and wireless components letters (01-08-2015)“…In this letter, a wide tuning range W-band phase-locked loop (PLL) in 90 nm CMOS is presented. A novel frequency tripling topology with a single cross-coupled…”
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11
A 10-Gb/s Low Jitter Single-Loop Clock and Data Recovery Circuit With Rotational Phase Frequency Detector
Published in IEEE transactions on circuits and systems. I, Regular papers (01-11-2014)“…This paper presents a rotational phase frequency detector (RPFD) for reference-less clock and data recovery circuit (CDR). The proposed RPFD changes the…”
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12
An Inductorless 20-Gbaud Overshoot Suppression Modulator Driver Using Interleave Frequency Variant Feedback in 90-nm CMOS
Published in IEEE transactions on microwave theory and techniques (01-03-2023)“…An inductorless modulator driver with effective overshoot suppression and a large swing for high-speed optical communications is presented. A novel interleave…”
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13
A Compact V-Band Bandpass Filter in IPD Technology
Published in IEEE microwave and wireless components letters (01-10-2011)“…This work presents a miniaturized bandpass filter in V-band using integrated passive device (IPD) technology with thick metal layers and Benzocyclobutene (BCB)…”
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14
A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS
Published in IEEE microwave and wireless components letters (01-09-2012)“…By the electrostatic discharge (ESD)/matching co-design methodology, a wideband low-noise amplifier (LNA) using a grounded spiral inductor in conjunction with…”
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15
Second Harmonic Exploitation for High-Efficiency Wireless Power Transfer Using Duplexing Rectenna
Published in IEEE transactions on microwave theory and techniques (01-01-2021)“…In this article, a novel duplexing rectenna with harmonic feedback capability is proposed for efficient wireless power transfer (WPT) applications. The…”
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16
A 24 GHz Low-Noise Amplifier Using RF Junction Varactors for Noise Optimization and CDM ESD Protection in 90 nm CMOS
Published in IEEE microwave and wireless components letters (01-07-2011)“…This letter presents an ESD-protected 24 GHz low-noise amplifier (LNA) in 90 nm CMOS using RF junction varactors for noise optimization and ESD protection…”
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17
A Miniature 300-MHz Resonant DC-DC Converter With GaN and CMOS Integrated in IPD Technology
Published in IEEE transactions on power electronics (01-11-2018)“…A 300-MHz class-E dc-dc converter using the resonant gate driving technique is proposed. The gate driver utilizes the harmonic shaping network and RC feedback…”
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18
ESD-Protected K-Band Low-Noise Amplifiers Using RF Junction Varactors in 65-nm CMOS
Published in IEEE transactions on microwave theory and techniques (01-12-2011)“…This paper presents two K-band low-noise amplifiers (LNAs) in 65-nm CMOS using the proposed RF junction varactors as the ESD protection devices. The junction…”
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19
Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications
Published in IEEE transactions on microwave theory and techniques (01-12-2018)“…This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub-6 GHz for 5G communication applications by a…”
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20
A 40-Gb/s Modulator Driver Using Cascade Swing Compensation in 90 nm CMOS
Published in IEEE microwave and wireless components letters (01-09-2022)“…This letter presents a high-speed optical modulator driver with a large output swing in 90-nm CMOS technology. A new topology of cascade swing compensation…”
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