Temperature dependence of breakdown voltage in silicon abrupt p-n junctions
Temperature dependence of breakdown voltage in silicon abrupt p + -n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10 15 cm -3 to 10 18 cm -3 . Experimental data are in good agreement with the results o...
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| Published in: | IEEE transactions on electron devices Vol. 18; no. 6; pp. 391 - 393 |
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| Main Authors: | , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
IEEE
01-06-1971
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| Online Access: | Get full text |
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| Summary: | Temperature dependence of breakdown voltage in silicon abrupt p + -n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10 15 cm -3 to 10 18 cm -3 . Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1971.17210 |