Search Results - "Hsia, L. C."

Preperiodic points for families of rational maps by Ghioca, D., Hsia, L.‐C., Tucker, T. J.

“…Let X be a smooth curve defined over Q¯, let a,b∈P1(Q¯) and let fλ(x)∈Q¯(x) be an algebraic family of rational maps indexed by all λ∈X(C). We study whether…”
Get full text

Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe by Wong, L. H., Wong, C. C., Liu, J. P., Sohn, D. K., Chan, L., Hsia, L. C., Zang, H., Ni, Z. H., Shen, Z. X.

“…The use of Raman spectroscopy to characterize strain in strained Si and strained SiGe has been widely accepted. To use Raman spectroscopy for quantitative…”
Get full text

Characterization of tetra methyl cyclo tetra siloxanes-based low- k dielectric film by Widodo, J., Lu, W., Mhaisalkar, S.G., Hsia, L.C., Tan, P.Y., Shen, L., Zeng, K.Y.

“…In this work, chemical vapor deposited low- k films using tetra methyl tetra cyclo siloxanes (TMCTS) precursors were studied. Process parameters studied…”
Get full text

Adhesion study of tetra methyl cyclo tetra siloxanes (TMCTS) and tri methyl silane (3MS)-based low- k films by Widodo, J., Damayanti, M., Mhaisalkar, S.G., Lu, W., Ong, S., Sritharan, T., Zeng, K.Y., Hsia, L.C.

“…Chemical vapor deposited (CVD) low- k films using tri methyl silane (3MS) precursors and tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied…”
Get full text

Effects of X-ray irradiation on GIDL in MOSFETs by Acovic, A., Hsu, C.C.-H., Hsia, L.-C., Balasinski, A., Ma, T.-P.

“…The effect of X-ray irradiation on the gate-induced drain leakage (GIDL) is shown to be mostly due to the electrostatic effect of the trapped positive charge…”
Get full text

Radiation damage effects on bipolar and MOS devices in X-Ray lithography by Hsia, L. C., Christensen, T.

“…Article abstract not available…”
Get full text

Stress-induced voiding in multi-level copper/low-k interconnects by Lim, Y.K., Lim, Y.H., Seet, C.S., Zhang, B.C., Chok, K.L., See, K.H., Lee, T.J., Hsia, L.C., Pey, K.L.

“…Stress-induced voiding phenomenon in vias at different metallization layers was studied in details with stress temperatures ranging from 150/spl deg/C to…”
Get full text

Optimization of the Thermomechanical Reliability of a 65 nm Cu/Low- k Large-Die Flip Chip Package by Ong, J.M.G., Tay, A.A.O., Zhang, X., Kripesh, V., Lim, Y.K., Yeo, D., Chan, K.C., Tan, J.B., Hsia, L.C., Sohn, D.K.

“…The trend toward finer pitch and higher performance integrated circuit devices has driven the semiconductor industry to incorporate copper and low-k dielectric…”
Get full text

Adhesion study of low- k/Si system using 4-point bending and nanoscratch test by Damayanti, M., Widodo, J., Sritharan, T., Mhaisalkar, S.G., Lu, W., Gan, Z.H., Zeng, K.Y., Hsia, L.C.

“…Chemical vapour deposited (CVD) low- k films using tri-methyl-silane (3MS) and tetra-methyl cyclo-tetra-siloxanes (TMCTS) precursors were studied. A 4-point…”
Get full text

Effects of CO2 and O2 on the property of tetra methyl tetra cyclo siloxanes based low-k film by Widodo, J., Lu, W., Mhaisalkar, S.G., Sudijono, J.L., Hsia, L.C., Shen, L., Zeng, K.Y.

“…In this work, chemical vapor--deposited carbon--doped oxide (CDO) films using tetra methyl cyclo tetra siloxanes (TMCTS) precursors were studied. Process…”
Get full text

Study of upstream electromigration bimodality and its improvement in Cu low-k interconnects by Liu, W, Lim, Y K, Zhang, F, Liu, H, Zhao, Y H, Du, A Y, Zhang, B C, Tan, J B, Sohn, D K, Hsia, L C

“…The bimodality of upstream electromigration (EM) failures in the dual damascene structure of 45 nm Cu interconnection process with low-k material is…”
Get full text

Characterization of Mg,Al-hydrotalcite conversion film on Mg alloy and Cl− and CO32- anion-exchangeability of the film in a corrosive environment by LIN, J, HSIA, C, UAN, J

Get full text

Effects of O 2 and He on the properties of the trimethyl silane based low-k films by Widodo, J., Goh, L. N., Lu, W., Mhaisalkar, S. G., Ong, S., Sudijono, J. L., Hsia, L. C., Tan, P. Y., Zeng, K. Y.

“…In this work, chemical vapor deposited carbon doped oxide films using trimethyl silane precursors with dielectric constant in the range of 2.75 to 3.62 were…”
Get full text

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain by Liu, J. P., Li, K., Pandey, S. M., Benistant, F. L., See, A., Zhou, M. S., Hsia, L. C., Schampers, Ruud, Klenov, Dmitri O.

“…We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed…”
Get full text

Under-surface observation of thin-film alumina on NiAI(100) with scanning tunneling microscopy by WANG, C. T, LIN, C. W, HSIA, C. L, CHANG, B. W, LUO, M. F

Get full text

Radiation damage study of bipolar devices in x‐ray lithography by Hsia, L. C., Magdo, I.

“…The radiation damage of bipolar transistors has been investigated using the vacuum ultraviolet (VUV) storage ring of the National Synchrotron Light Source at…”
Get full text

Under-surface observation of thin-film alumina on NiAl(100) with scanning tunneling microscopy by Wang, C.T., Lin, C.W., Hsia, C.L., Chang, B.W., Luo, M.F.

“…Scanning tunneling microscopy (STM) was used to investigate the oxide structures underlying the surface of alumina thin-film grown on NiAl(100). At a bias…”
Get full text

The Effect of Food Deprivation Length of Pair House Pigs on the Running Speed and Feeding Activity in Solitary and Social Conditions by Hsia, L. C.

Get full text

Auger recombination enhanced hot carrier degradation in nMOSFETs with positive substrate bias by Chiang, L.P., Tsai, C.W., Wang, T., Liu, U.C., Wang, M.C., Hsia, L.C.

“…Enhanced hot carrier degradation is observed in DTMOS-like operation mode. This phenomenon is attributed to Auger recombination assisted hot electron process…”
Get full text

Implant damage and strain relaxation of embedded epitaxial silicon germanium layer on silicon by Liu, J. P., Li, J., See, A., Zhou, M. S., Hsia, L. C.

“…The authors report on the implant damage and strain relaxation in embedded silicon germanium (SiGe) layer, selectively grown on recessed silicon (Si) (001)…”
Get full text