Search Results - "Hoyt, J.L"

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions by Nayfeh, O.M., Chleirigh, C.N., Hennessy, J., Gomez, L., Hoyt, J.L., Antoniadis, D.A.

“…Heterojunction tunneling field-effect transistors (HTFETs) that use strained-silicon/strained-germanium type-II staggered band alignment for band-to-band…”
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Fabrication and analysis of deep submicron strained-Si n-MOSFET's by Rim, K., Hoyt, J.L., Gibbons, J.F.

“…Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures were designed…”
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Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs by Gomez, L., Hashemi, P., Hoyt, J.L.

“…Hole mobility and velocity are extracted from scaled strained-Si 0.45 Ge 0.55 channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate…”
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Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter by Hashemi, P., Gomez, L., Hoyt, J.L.

“…The effects of high-level uniaxial tensile strain on the performance of gate-all-around (GAA) Si n-MOSFETs are investigated for nanowire (NW) diameters down to…”
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A physically based analytical model for the threshold voltage of strained-Si n-MOSFETs by Nayfeh, H.M., Hoyt, J.L., Antoniadis, D.A.

“…A physically based analytic model for the threshold voltage V/sub t/ of long-channel strained-Si--Si/sub 1-x/Ge/sub x/ n-MOSFETs is presented and confirmed…”
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Thickness Dependence of Hole Mobility in Ultrathin SiGe-Channel p-MOSFETs by Chleirigh, C.N., Theodore, N.D., Fukuyama, H., Mure, S., Ehrke, H.-U., Domenicucci, A., Hoyt, J.L.

“…A fundamental understanding of the mechanisms responsible for the dependence of hole mobility on SiGe channel layer thickness is presented for channel…”
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Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm by Gomez, L., Aberg, I., Hoyt, J.L.

“…The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-free 30% strained-Si directly…”
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Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates by Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

“…We demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) substrates with a high Ge…”
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Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs by Aberg, I., Cait Ni Chleirigh, Hoyt, J.L.

“…The combination of channel mobility-enhancement techniques such as strain engineering with nonclassical MOS device architectures, such as ultrathin-body (UTB)…”
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Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors by Welser, J., Hoyt, J.L., Gibbons, J.F.

“…Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of…”
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Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm by Aberg, I., Hoyt, J.L.

“…Hole transport is studied in ultrathin body (UTB) MOSFETs in strained-Si directly on insulator (SSDOI) with a Si thickness down to 1.4 nm. In these Ge-free…”
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Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes by Nayfeh, O.M., Chleirigh, C.N., Hoyt, J.L., Antoniadis, D.A.

“…Strained silicon-germanium (Si 0.6 Ge 0.4 ) gated diodes have been fabricated and analyzed. The devices exhibit significantly enhanced gate-controlled…”
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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs by Nayfeh, H.M., Leitz, C.W., Pitera, A.J., Fitzgerald, E.A., Hoyt, J.L., Antoniadis, D.A.

“…In this letter, we investigate the dependence of electron inversion layer mobility on high-channel doping required for sub-50-nm MOSFETs in strained silicon…”
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Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs by Guangrui Xia, Nayfeh, H.M., Lee, M.L., Fitzgerald, E.A., Antoniadis, D.A., Anjum, D.H., Jian Li, Hull, R., Klymko, N., Hoyt, J.L.

“…The impact of processing factors such as ion implantation and rapid thermal annealing on mobility enhancement in strained-Si n-channel…”
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Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology by Shaofeng Yu, Jongwan Jung, Hoyt, J.L., Antoniadis, D.A.

“…The strained-Si-strained-SiGe dual-channel layer substrate is known for its mobility advantage. This letter investigates its potential as a CMOS substrate that…”
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Mobility enhancement in dual-channel P-MOSFETs by Jongwan Jung, Shaofeng Yu, Lee, M.L., Hoyt, J.L., Fitzgerald, E.A., Antoniadis, D.A.

“…Hole mobility is characterized in P-MOSFETs with a layered substrate consisting of tensile strained Si cap on a compressively strained Si/sub 0.4/Ge/sub 0.6/…”
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Fully depleted strained-SOI n- and p-MOSFETs on bonded SGOI substrates and study of the SiGe/BOX interface by Zhiyuan Cheng, Pitera, A.J., Lee, M.L., Jongwan Jung, Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.

“…Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant…”
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Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique by Aberg, I., Olubuyide, O.O., Chleirigh, C.N., Lauer, I., Antoniadis, D.A., Li, J., Hull, R., Hoyt, J.L.

“…Electron and hole mobility enhancements are studied in Ge-free strained silicon directly on insulator fabricated by a bond and etch-back technique, for the…”
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Comparison of Si/Si1−−Ge C and Si/Si1−C heterojunctions grown by rapid thermal chemical vapor deposition by Hoyt, J.L, Mitchell, T.O, Rim, K, Singh, D.V, Gibbons, J.F

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Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors by Takagi, S., Hoyt, J.L., Rim, K., Welser, J.J., Gibbons, J.F.

“…In this study, admittance spectroscopy is applied for the first time to MOS capacitors fabricated on Si/Si/sub 1-x/Ge/sub x//Si double-heterostructures, in…”
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