Search Results - "Hower, Philip"

Two-Carrier Current Saturation in a Lateral Dmos by Lin, J., Hower, P.L.

“…Conventional Ldmos transistors suffer from drain current "compression" in saturation (gm reduction). When the safe-operating area of the Ldmos is improved by…”
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Short and long-term safe operating area considerations in LDMOS transistors by Hower, P.L., Pendharkar, S.

“…Lateral DMOS transistors are widely used in mixed-signal IC circuit designs, particularly where power handling is important. This paper views the LDMOS from a…”
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Current status and future trends in silicon power devices by Hower, P L, Pendharkar, S, Efland, T

“…Over the past 60 years, semiconductor device technology has enabled major social and economic changes throughout the world. These changes bring opportunities…”
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Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, and Rik De Doncker, Springer-Verlag, Berlin Heidelberg (2011). ISBN 978-3-642-11124-2 by Hower, Philip

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Book Review by Hower, Philip

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Safe operating area - a new frontier in Ldmos design by Hower, P.L.

“…The boundaries that determine the Ldmos safe operating area are described and are shown to be predominantly thermal or electrical in origin. Methods of…”
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Power semiconductor devices: an overview by Hower, P.L.

“…Advances in power semiconductor devices are discussed, focusing on the adaptation of silicon integrated circuit wafer processing methods to the design and…”
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Power semiconductor devices II session summary by Hower, Philip L.

“…Power semiconductor switches serve as key elements in the vast majority of power electronic systems. The papers in this session illustrate the fact that it is…”
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Comparison of one- and two-dimensional models of transistor thermal instability by Hower, P.L., Govil, P.K.

“…The I C -V CE locus predicted by a one-dimensional model of thermal instability is compared with the I C -V CE locus predicted by a numerical model which…”
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Avalanche injection and second breakdown in transistors by Hower, P.L., Krishna Reddi, V.G.

“…A rapid type of second breakdown observed in silicon n + -p-n-n + transistors is shown to be due to avalanche injection at the collector n-n + junction…”
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Application of a charge-control model to high-voltage power transistors by Hower, P.L.

“…Basic charge-control concepts are applied to the problem of predicting the static and large-signal switching characteristics of high-voltage transistors, with…”
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Current saturation and small-signal characteristics of GaAs field-effect transistors by Hower, P.L., Bechtel, N.G.

“…The model previously proposed by Turner and Wilson is developed in detail and compared with experiment. Deviations from Shockley's classical theory can be…”
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Optimum design of power transistor switches by Hower, P.L.

“…An optimization procedure is developed that completely specifies the one-dimensional design of a double-diffused transistor with only two pieces of input data…”
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Use of zone-melting recrystallization to fabricate a three-dimensional structure incorporating power bipolar and field-effect transistors by Geis, M.W., Chen, C.K., Mountain, R.W., Economou, N.P., Lindley, W.T., Hower, P.L.

“…Three-dimensional (3-D) structures have been fabricated incorporating power bipolar transistors in a Si substrate and metal-oxide-semiconductor field-effect…”
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Emitter current-crowding in high-voltage transistors by Hower, P.L., Einthoven, W.G.

“…The problem of emitter current-crowding is treated for the case where the base is heavily doped with respect to the collector and the transistor is operating…”
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Stable hot spots and second breakdown in power transistors by Hower, Philip L., Blackburn, David L., Oettinger, Frank F., Rubin, Sherwin

“…The mechanism of hot spot formation in transistors is examined from both experimental and theoretical viewpoints. It is shown that after the device becomes…”
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Design and performance of the GaAs FET by Bechtel, N.G., Hooper, W.W., Hower, P.L.

“…See abstr. B25052 of 1970…”
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