Search Results - "Houssiau, L"

Probing the reaction mechanism between a laser welded polyamide thin film and titanium with XPS and ToF-SIMS by Hirchenhahn, P., Al Sayyad, A., Bardon, J., Plapper, P., Houssiau, L.

“…The biomedical industry uses more and more polymer/metal hybrid assemblies because of the ability to combine the advantages and lower the inconveniences of…”
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Highlighting Chemical Bonding between Nylon-6.6 and the Native Oxide from an Aluminum Sheet Assembled by Laser Welding by Hirchenhahn, P, Al Sayyad, A, Bardon, J, Felten, A, Plapper, P, Houssiau, L

“…Polymer/metal hybrid assemblies are well suited for automotive and biomedical applications because of their ability to create lightweight structures with a…”
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Diffusion at the interface of laser welded polyamide-6.6 and aluminum assemblies by Hirchenhahn, P., Al-Sayyad, A., Bardon, J., Plapper, P., Houssiau, L.

“…Polymer/metal assemblies are widely used in industry, especially the automotive industry, to get more cost efficient and light weight structures. Although they…”
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Investigation of some physical properties of pure and Co-doped MoO3 synthesized on glass substrates by the spray pyrolysis method by Benameur, N., Chakhoum, M.A., Boukhachem, A., Dahamni, M.A., Ghamnia, M., Hacini, N., Pireaux, J.-P., Houssiau, L., Ziouche, A.

“…•Highlighting the effect of cobalt doping on structural and morphology properties.•AFM observations show the formation of micro-plates parallel to the surface…”
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Molecular depth profiling of polymers with very low energy reactive ions by Houssiau, L., Mine, N.

“…This work follows previous studies in which we demonstrated the feasibility of molecular depth profiling with time‐of‐flight secondary ion mass spectrometry…”
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Molecular depth profiling with reactive ions, or why chemistry matters in sputtering by Houssiau, L., Mine, N.

“…We have shown in recent papers that low‐energy Cs+ ions can be used successfully for molecular depth profiling of polymers. This paper reviews a few key…”
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Molecular depth profiling of polymers with very low energy ions by Houssiau, L., Douhard, B., Mine, N.

“…The need for a molecular depth profiling technique to study organic layers has become a strong incentive in the SIMS community in the last few years,…”
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First in situ Optical Emission Spectroscopy measurements during cesium low-energy depth profiling by Mine, N., Houssiau, L.

“…Studying ex situ the fundamental processes involved during cesium low‐energy molecular depth profiling of polymers is a hard task owing to the well‐known…”
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Comparison of fullerene and large argon clusters for the molecular depth profiling of amino acid multilayers by Wehbe, N., Mouhib, T., Delcorte, A., Bertrand, P., Moellers, R., Niehuis, E., Houssiau, L.

“…A major challenge regarding the characterization of multilayer films is to perform high-resolution molecular depth profiling of, in particular, organic…”
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Metal-Assisted Secondary Ion Mass Spectrometry Using Atomic (Ga+, In+) and Fullerene Projectiles by Delcorte, A, Yunus, S, Wehbe, N, Nieuwjaer, N, Poleunis, C, Felten, A, Houssiau, L, Pireaux, J.-J, Bertrand, P

“…The advantages and drawbacks of using either monatomic or buckminsterfullerene primary ions for metal-assisted secondary ion mass spectrometry (MetA-SIMS) are…”
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X-Ray Photoelectron Spectroscopy Study for TIO2-Like Films Deposited by RF Inductively Coupled Plasma: Effect of Gas Flux by Li, Z., Li, X., Liu, G., Pireaux, J. -J., Houssiau, L., Bonifaci, N.

“…Titanium dioxide (TiO 2 ) thin films have been applied in the many fields because of the chime-physic excellent properties. RF Inductively coupled plasma (ICP)…”
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Molecular depth profiling of model biological films using low energy monoatomic ions by Brison, J., Mine, N., Wehbe, N., Gillon, X., Tabarrant, T., Sporken, R., Houssiau, L.

“…[Display omitted] ► We report a systematic study of ToF-SIMS depth profiling performance on model biological samples. ► Amino acid and nucleoside layers were…”
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Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS by Houssiau, L., Noël, C., Mine, N., Jung, K. W., Min, W. J., Moon, D. W.

“…In this report, cesium surface layers formed by Cs+ ion bombardment on silicon and phenylalanine (Phe) samples were analyzed by TOF‐MEIS and ToF‐SIMS. Si…”
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TOF-SIMS depth profiling of multilayer amino-acid films using large Argon cluster Ar+n, C+60 and Cs+ sputtering ions: A comparative study by WEHBE, N, TABARRANT, T, BRISON, J, MOUHIB, T, DELCORTE, A, BERTRAND, P, MOELLERS, R, NIEHUIS, E, HOUSSIAU, L

“…The performance of Cs + , C 60 + and Ar n + (with n  ≈ 1700) sputtering ions have been compared for depth profiling multilayer films made from three evaporated…”
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TOF-SIMS depth profiling of multilayer amino-acid films using large Argon cluster Arn+, C60+ and Cs+ sputtering ions: A comparative study by Wehbe, N., Tabarrant, T., Brison, J., Mouhib, T., Delcorte, A., Bertrand, P., Moellers, R., Niehuis, E., Houssiau, L.

“…The performance of Cs+, C60+ and Arn+ (with n ≈ 1700) sputtering ions have been compared for depth profiling multilayer films made from three evaporated…”
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MCsn+ cluster formation on organic surfaces: A novel way to depth-profile organics? by Mine, N., Douhard, B., Houssiau, L.

“…In this work, we investigated the bombardment of polymer surfaces (PC, PMMA) with very low energy (250 eV) Cs+ ions. In the positive mode, we observed many…”
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Depth distribution of Cs implanted into Si at steady-state during dual beam ToF-SIMS profiling by Vitchev, R.G., Brison, J., Houssiau, L.

“…The steady-state depth distributions of Cs atoms implanted into a H-terminated Si surface at different energies (250 eV to 2 keV, 45° incidence angle) were…”
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Metal-assisted SIMS and cluster ion bombardment for ion yield enhancement by Heile, A., Lipinsky, D., Wehbe, N., Delcorte, A., Bertrand, P., Felten, A., Houssiau, L., Pireaux, J.-J., De Mondt, R., Van Vaeck, L., Arlinghaus, H.F.

“…In addition to structural information, a detailed knowledge of the local chemical environment proves to be of ever greater importance, for example for the…”
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Cesium redeposition artifacts during low energy ToF-SIMS depth profiling by Vitchev, R.G., Brison, J., Houssiau, L.

“…H-terminated Si samples were preloaded with Cs by performing ToF-SIMS depth profiles (250 eV Cs +, 15 keV Ga +) until the steady state was reached both with…”
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Measurement and modeling of work function changes during low energy cesium sputtering by Brison, J., Mine, N., Poisseroux, S., Douhard, B., Vitchev, R.G., Houssiau, L.

“…In this paper, a H-terminated silicon wafer was bombarded by low energy cesium ions during ToF-SIMS analysis and work function variations of the target were…”
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