Search Results - "Hou, Ziyang"

Effect of hydroxy carboxylates as complexing agent on improving chemical mechanical polishing performance of M-plane sapphire and action mechanism analysis by Qu, Minghui, Niu, Xinhuan, Hou, Ziyang, Yan, Han, Luo, Fu

“…As sapphire device performance continues to improve, greater challenges are posed to the chemical mechanical polishing (CMP) of sapphire, with its high degree…”
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Hydraulic fracture characterization of debris-rich ice hole for polar geological drilling based on Peridynamics by Xu, Haoran, Liu, Yongsheng, He, Chengbei, Hou, Ziyang, Yang, Gansheng

“…Polar geological drilling is crucial to investigating the earth's environment and climate evolution. Hydraulic fracturing occurs around the ice holes when…”
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A universal HF‐free synthetic method to highly efficient narrow‐band red‐emitting A2XF6:Mn4+ (A = K, Na, Rb, Cs; X = Si, Ge, Ti) phosphors by Luo, Xuefang, Hou, Ziyang, Zhou, Tianliang, Xie, Rong‐Jun

“…Mn4+‐activated fluoride red‐emitting narrow‐band phosphors have been successfully used in wide color‐gamut white LEDs for liquid crystal display (LCD)…”
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Surface corrosion inhibition mechanism of sarcosine as a green novel inhibitor on a novel barrier layer material of cobalt in copper film CMP for GLSI by Zhang, Yinchan, Niu, Xinhuan, Zhou, Jiakai, Wang, Jianchao, Yang, Chenghui, Hou, Ziyang, Zhu, Yebo, Huang, Li

“…For integrated circuits (IC), as the technology node goes down to 20-14 nm, cobalt (Co) replaces tantalum as a new barrier layer material. The polishing…”
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A universal HF‐free synthetic method to highly efficient narrow‐band red‐emitting A 2 X F 6 :Mn 4+ ( A  = K, Na, Rb, Cs; X  = Si, Ge, Ti) phosphors by Luo, Xuefang, Hou, Ziyang, Zhou, Tianliang, Xie, Rong‐Jun

“…Abstract Mn 4+ ‐activated fluoride red‐emitting narrow‐band phosphors have been successfully used in wide color‐gamut white LEDs for liquid crystal display…”
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Effect and mechanism of oxidant on alkaline chemical mechanical polishing of gallium nitride thin films by Zhu, Yebo, Niu, Xinhuan, Hou, Ziyang, Zhang, Yinchan, Shi, Yunhui, Wang, Ru

“…As a wide band gap semiconductor, gallium nitride (GaN) is widely used in kinds of electronic devices. With the improvement of device accuracy, the…”
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Synergistic effect of 1,2,4-triazole and phytic acid as inhibitors on copper film CMP for ruthenium - based copper interconnected and the surface action mechanism analysis by Luo, Fu, Niu, Xinhuan, Yan, Han, Zhang, Yinchan, Qu, Minghui, Zhu, Yebo, Hou, Ziyang

“…Ruthenium (Ru) has been selected as the next-generation barrier material for copper (Cu) interconnects due to its excellent electrical properties, high…”
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Investigation of the dynamic ascent characteristics of ice core during polar core drilling by Hou, Ziyang, Liu, Yongsheng, Meng, Qingsheng, Xu, Haoran, Liang, Nan, Yang, Gansheng

“…In polar ice core drilling, continuous coring with air reverse circulation (CCARC) technique can increase the drilling rate, reduces pollution, and prevents…”
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Study on hydraulic cracking mechanism and propagation characteristics of ice hole based on Peridynamics by Xu, Haoran, Liu, Yongsheng, Hou, Ziyang, Dou, Zijun, Zhang, Jiansong, Yang, Gansheng

“…Drilling of polar deep ice cores is an important means to study the evolution of the earth's climate. When drilling into complex formations such as brittle ice…”
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Effect and mechanism analysis of sarcosine on the chemical mechanical polishing performance of copper film for GLSI by Zhang, Yinchan, Niu, Xinhuan, Zhou, Jiakai, Wang, Jianchao, Zhu, Yebo, Hou, Ziyang, Yan, Han, Luo, Fu, Qu, Minghui

“…With the decrease of integrated circuits feature size, chemical mechanical polishing (CMP) of copper (Cu) film for multilayer wiring is faced with new…”
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Prediction of planarization property in copper film chemical mechanical polishing via response surface methodology and convolutional neural network by Zhou, Jiakai, Niu, Xinhuan, Zhang, Tianlin, Wang, He, Yang, Chenghui, Zhang, Yinchan, Wang, Wantang, Wang, Zhi, Zhu, Yebo, Hou, Ziyang, Wang, Ru

“…Chemical mechanical polishing (CMP) is one of the most important and effective technologies to achieve global planarization for precision machining of the…”
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Effect of Surfactants on CMP Properties of M-Plane Sapphire by Zou, Yida, Niu, Xinhuan, Hou, Ziyang, Qu, Minghui, Zhan, Ni, Liu, Jianghao

“…M-plane sapphire is commonly used as a substrate material for gallium nitride and zinc oxide. Chemical mechanical polishing (CMP) is one of the most effective…”
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Effect of Oxone and Peroxodisulphates on the Chemical Mechanical Polishing Efficiency of C-Plane GaN by Zhu, Yebo, Niu, Xinhuan, Hou, Ziyang, Zhang, Yinchan, Lu, Yanan

“…Because of the high hardness and chemical inertia, GaN is difficult to be processed. Chemical mechanical polishing (CMP) is one of ultra-precision processing…”
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Component Optimization of Sapphire Slurry Based on Response Surface Methodology for Chemical Mechanical Polishing by Qu, Minghui, Niu, Xinhuan, Lu, Yanan, Hou, Ziyang, Yan, Han, Luo, Fu

“…For sapphire wafer, chemical mechanical polishing (CMP) is widely applied to obtain super-smooth and non-damaged wafer surface. To solve the problem of…”
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Preparation of ZNO Doped SiO2 Abrasive and Chemical Mechanical Polishing Performance on C-Plane Sapphire Substrate by Hou, Ziyang, Niu, Xinhuan, Lu, Yanan, Zhang, Yinchan, Zhu, Yebo, He, Yangang

“…Sapphire substrate is the most commonly used in semiconductor industry for GaN-based light emitting diodes (LEDs). Chemical mechanical polishing (CMP) is one…”
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Effect of FA/O II Surfactant as a Complex Non-Ionic Surfactant on Copper CMP by Zhang, Yinchan, Niu, Xinhuan, Zhou, Jiakai, Yang, Chenghui, Hou, Ziyang, Zhu, Yebo

“…The surfactant in the slurry can optimize the surface uniformity and surface topography of the wafer to realize the global planarization, so the effect of FA/O…”
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