Search Results - "Hosse, B."

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability by Green, D.S., Gibb, S.R., Hosse, B., Vetury, R., Grider, D.E., Smart, J.A.

“…High-quality GaN epitaxy continues to be challenged by the lack of matched substrates. Threading dislocations that result from heteroepitaxy are responsible…”
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Gallium nitride (GaN) HEMT's: progress and potential for commercial applications by Shealy, J., Smart, J., Poulton, M., Sadler, R., Grider, D., Gibb, S., Hosse, B., Sousa, B., Halchin, D., Steel, V., Garber, P., Wilkerson, P., Zaroff, B., Dick, J., Mercier, T., Bonaker, J., Hamilton, M., Greer, C., Isenhour, M.

“…This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial…”
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Stimulation of HeLa cell growth by a serum fraction with sulfation factor activity by Salmon, Jr, W D, Hosse, B R

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Control of epitaxial defects for optimal A1GaN/GaN HEMT performance and reliability by GREEN, D. S, GIBB, S. R, HOSSE, B, VETURY, R, GRIDER, D. E, SMART, J. A

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